Preparation Techniques for Cross‐Section Transmission Electron Microscopy Lamellas Suitable for Investigating In Situ Silicon–Aluminum Alloying at Grain Boundaries in Multicrystalline Silicon

2019 ◽  
Vol 216 (17) ◽  
pp. 1900308
Author(s):  
Christoph Flathmann ◽  
Hendrik Spende ◽  
Tobias Meyer ◽  
Patrick Peretzki ◽  
Michael Seibt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Cross Section ◽  
Multicrystalline Silicon ◽  
Transmission Electron ◽  
Preparation Techniques

The Challenge and Methods of TEM Cross-Sectioning of < 0.25 Micron Plugs

1998 ◽  
Vol 523 ◽  
Author(s):  
C. Amy Hunt ◽  
Yuhong Zhang ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Adhesion Layer ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Sectional Plane ◽  
Preparation Techniques

AbstractTransmission electron microscopy (TEM) is a useful tool in process evaluation and failure analysis for semiconductor industries. A common focus of semiconductor TEM analyses is metalization vias (plugs) and it is often desirable to cross-section through a particular one. If the cross-sectional plane deviates away from the center of the plug, then the thin adhesion layer around the plug will be blurred by surrounding materials such as the inter-layer dielectric and the plug material. The importance of these constraints, along with the difficulty of precision sample preparation, has risen sharply as feature sizes have fallen to 0.25 μm and below. The suitability of common sample preparation techniques for these samples is evaluated.

Nucleation Phenomena during Titanium Silicon Reaction

1989 ◽  
Vol 146 ◽  
Author(s):  
Ivo J.M.M. Raaijmakers ◽  
Leo J. van Ijzendoorn ◽  
Anton M.L. Theunissen ◽  
Ki-Bum Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Nucleation And Growth ◽  
Diffusion Control ◽  
Transmission Electron ◽  
First Results ◽  
Titanium Silicon

ABSTRACTIt is known that thermal annealing of Ti and amorphous (α) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.

Oriented attachment induces fivefold twins by forming and decomposing high-energy grain boundaries

Science ◽  
2019 ◽  
Vol 367 (6473) ◽  
pp. 40-45 ◽  
Author(s):  
Miao Song ◽  
Gang Zhou ◽  
Ning Lu ◽  
Jaewon Lee ◽  
Elias Nakouzi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Palladium Nanoparticles ◽  
High Energy ◽  
Oriented Attachment ◽  
Transmission Electron ◽  
Wide Range ◽  
Dynamics Simulations

Natural and synthetic nanoparticles composed of fivefold twinned crystal domains have distinct properties. The formation mechanism of these fivefold twinned nanoparticles is poorly understood. We used in situ high-resolution transmission electron microscopy combined with molecular dynamics simulations to demonstrate that fivefold twinning occurs through repeated oriented attachment of ~3-nanometer gold, platinum, and palladium nanoparticles. We discovered two different mechanisms for forming fivefold twinned nanoparticles that are driven by the accumulation and elimination of strain. This was accompanied by decomposition of grain boundaries and the formation of a special class of twins with a net strain of zero. These observations allowed us to develop a quantitative picture of the twinning process. The mechanisms provide guidance for controlling twin structures and morphologies across a wide range of materials.

Magnetic Recording Disk Specimen Preparation for Transmission Electron Microscopy

1990 ◽  
Vol 199 ◽  
Author(s):  
Michael A. Parker ◽  
K. L. Parker ◽  
M. Meininger ◽  
A. Bermea
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Magnetic Recording ◽  
Specimen Preparation ◽  
Disk Specimen ◽  
Transmission Electron ◽  
Preparation Techniques

ABSTRACTModifications to conventional techniques required to prepare specimens from magnetic recording disks are described. Both the preparation of through-foil and cross-section specimens are discussed. The differences between preparation techniques for particulate and thin film disks are elucidated. Micrographs of specimens prepared by various techniques from both types of disk technology are presented that show the relative merits of these methods.

In-Situ Electromigration Stressing in Transmission Electron Microscopy for Al-Cu Interconnects

1994 ◽  
Vol 356 ◽  
Author(s):  
W. C. Shih ◽  
A.L. Greer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Open Circuit ◽  
Grain Structure ◽  
Cu Interconnects ◽  
Early Stress ◽  
Transmission Electron ◽  
Copper Depletion

AbstractUnpassivated 2.1 μm wide Al-4wt%Cu interconnects with near-bamboo grain structure, are electromigration-tested to failure in-situ in transmission electron microscopy. Early stress-induced voids stop growing and are not fatal. Hillocking is associated with precipitates, fatal voiding with copper depletion. Electromigration-induced voids form at the upstream end of inclined grain boundaries. Healing events are analysed and it is shown that open-circuit failure can occur when the proximity of grain boundaries impairs the stress-driven healing.

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