In-Situ Electromigration Stressing in Transmission Electron Microscopy for Al-Cu Interconnects

1994 ◽  
Vol 356 ◽  
Author(s):  
W. C. Shih ◽  
A.L. Greer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Open Circuit ◽  
Grain Structure ◽  
Cu Interconnects ◽  
Early Stress ◽  
Transmission Electron ◽  
Copper Depletion

AbstractUnpassivated 2.1 μm wide Al-4wt%Cu interconnects with near-bamboo grain structure, are electromigration-tested to failure in-situ in transmission electron microscopy. Early stress-induced voids stop growing and are not fatal. Hillocking is associated with precipitates, fatal voiding with copper depletion. Electromigration-induced voids form at the upstream end of inclined grain boundaries. Healing events are analysed and it is shown that open-circuit failure can occur when the proximity of grain boundaries impairs the stress-driven healing.

Observations Of Grain Growth In Thin Films

1991 ◽  
Vol 238 ◽  
Author(s):  
D. A. Smith ◽  
S. J. Townsend ◽  
C. S. Nichols
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Growth ◽  
Pure Metal ◽  
Grain Structure ◽  
Metallic Films ◽  
Ion Probe ◽  
Grain Structures ◽  
Transmission Electron

ABSTRACTGrain growth occurs during the deposition and subsequent processing of metallic films. Observation of the grain structure by scanning ion probe microscopy and grain growth by in situ transmission electron microscopy using a heating stage serves to define some characteristic grain structures and their evolution in pure metal and alloy films used for metallisation.

Oriented attachment induces fivefold twins by forming and decomposing high-energy grain boundaries

Science ◽  
2019 ◽  
Vol 367 (6473) ◽  
pp. 40-45 ◽  
Author(s):  
Miao Song ◽  
Gang Zhou ◽  
Ning Lu ◽  
Jaewon Lee ◽  
Elias Nakouzi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Palladium Nanoparticles ◽  
High Energy ◽  
Oriented Attachment ◽  
Transmission Electron ◽  
Wide Range ◽  
Dynamics Simulations

Natural and synthetic nanoparticles composed of fivefold twinned crystal domains have distinct properties. The formation mechanism of these fivefold twinned nanoparticles is poorly understood. We used in situ high-resolution transmission electron microscopy combined with molecular dynamics simulations to demonstrate that fivefold twinning occurs through repeated oriented attachment of ~3-nanometer gold, platinum, and palladium nanoparticles. We discovered two different mechanisms for forming fivefold twinned nanoparticles that are driven by the accumulation and elimination of strain. This was accompanied by decomposition of grain boundaries and the formation of a special class of twins with a net strain of zero. These observations allowed us to develop a quantitative picture of the twinning process. The mechanisms provide guidance for controlling twin structures and morphologies across a wide range of materials.

Dislocation - Grain Boundary Interaction in Nickel Bicrystals Evolution of the Resulting Defects under Thermal Treatment

2000 ◽  
Vol 652 ◽  
Author(s):  
Louisette Priester ◽  
Sophie Poulat ◽  
Brigitte Décamps ◽  
Jany Thibault
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Thermal Treatment ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Dislocation Network ◽  
Boundary Interaction ◽  
Transmission Electron

ABSTRACTThe interactions between lattice dislocations and grain boundaries were studied in nickel bicrystals. Three types of grain boundaries, according to their energy, were investigated : singular σ3 {111}, vicinal near σ11 {311} and general near σ11 {332} grain boundaries. The experiments were performed by transmission electron microscopy using a set of techniques : conventional, weak beam, in situ and high resolution transmission electron microscopy. Dislocation transmission from one crystal to the other was only observed for σ3 {111} GB. It consists in a decomposition within the grain boundary of the trapped lattice dislocation followed by the emission of one partial in the neighbouring crystal. A high resolved shear stress is required to promote the emission process. Most often, the absorbed lattice dislocations or extrinsic grain boundary dislocations react with the intrinsic dislocation network giving rise to complex configurations. The evolutions with time and upon thermal treatment of these configurations were followed by in situ transmission electron microscopy. The evolution processes, which differ with the type of grain boundaries, were analyzed by comparison with the existing models for extrinsic grain boundary dislocation accommodation. They were tentatively interpretated on the basis of the grain boundary atomic structures and defects obtained by high resolution transmission electron microscopy studies.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

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