Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

2019 ◽  
Vol 216 (21) ◽  
pp. 1900241 ◽  
Author(s):  
Zdenek Remes ◽  
Jiri Stuchlik ◽  
Ha The Stuchlikova ◽  
Katerina Dragounova ◽  
Petr Ashcheulov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Content ◽  
Optoelectronic Properties ◽  
Low Carbon ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Hydrogenated Amorphous

Structural Properties of a-Ge1-xCx:H Alloys Prepared by the RF Sputtering Technique

1997 ◽  
Vol 467 ◽  
Author(s):  
F. C. Marques ◽  
J. Vilcarromero ◽  
F. L. Freire
Keyword(s):  
Carbon Content ◽  
Rf Sputtering ◽  
Low Carbon ◽  
Infrared Transmission ◽  
Absorption Bands ◽  
Optical Gap ◽  
High Carbon Concentration ◽  
Bending Modes ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium

ABSTRACTStructural and mechanical properties of hydrogenated amorphous germanium carbon (a-Ge1-xCx:H) alloys are presented. The films were prepared by the rf-co-sputtering technique using a graphite/germanium composed target. The carbon and germanium relative concentrations were determined by RBS, and the total hydrogen concentration by ERDA measurements. An increase in the optical gap was measured for low carbon content (0 < × < 0.15). For higher values of x the optical gap is almost constant. Infrared transmission absorption spectra show several absorption bands related to Ge-C stretching, C-Hn (n = 1,2,3) and Ge-H stretching and bending modes. The mechanical internal stress was strongly affected by the incorporation of carbon. The trends of the optical gap, refractive index, infrared absorption and mechanical stress as a function of the carbon content suggest that the high carbon concentration alloys have polymeric and/or graphite-like contribution in their structure.

Electron drift mobility in hydrogenated amorphous Si1−xCxwith a low carbon content

1993 ◽  
Vol 68 (3) ◽  
pp. 173-178 ◽  
Author(s):  
Ö. Öktü ◽  
H. Tolunay ◽  
G. J. Adriaenssens ◽  
S. D. Baranovskii ◽  
W. Lauwerens
Keyword(s):  
Carbon Content ◽  
Drift Mobility ◽  
Electron Drift ◽  
Low Carbon ◽  
Hydrogenated Amorphous ◽  
Electron Drift Mobility

Optoelectronic Properties of a-SiC:H Studied by Time-Resolved Microwave Photoconductivity and Photoinduced Absorption Measurements

1992 ◽  
Vol 258 ◽  
Author(s):  
C. Swiatkowski ◽  
D. Herm ◽  
W. Hirsch ◽  
M. Kunst
Keyword(s):  
Carbon Content ◽  
Drift Mobility ◽  
Optoelectronic Properties ◽  
Electron Trapping ◽  
Electron Drift ◽  
Low Carbon ◽  
Photoinduced Absorption ◽  
Time Resolved ◽  
Electron Drift Mobility ◽  
Absorption Measurements

ABSTRACTThe optoelectronic properties of a-SiC:H alloys with different carbon content are investigated with time resolved photoconductivity and photoinduced absorption measurements. It is shown that the electron drift mobility decreases with increasing carbon content. Also a weak increase of deep electron trapping with increasing carbon content is suggested by the experimental data. The recombination does not seem to be strongly changed by the presence of carbon at least at low carbon content.

A New Route of Forming Silicon Carbide Nanostructures with Controlled Morphologies

2008 ◽  
Vol 403 ◽  
pp. 149-152 ◽  
Author(s):  
Yi Bing Cheng ◽  
Kun Wang ◽  
Huan Ting Wang
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Carbon Content ◽  
Carbothermal Reduction ◽  
Crystalline Silicon ◽  
Effective Means ◽  
Nitrogen Adsorption ◽  
Low Carbon ◽  
Sio2 Nanocomposites ◽  
Adsorption Desorption

Mesoporous silica-carbon nanocomposites (C-SiO2) were synthesized and used as a host carrier in carbothermal reduction to fabricate highly crystalline silicon carbide nanoparticles and nanofibers. SiC nuclei were introduced into the mesopores as seeds by infiltration of preceramic precursor polycarbosilane (PCS) prior to the heat-treatment of carbothermal reduction. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and nitrogen adsorption-desorption analysis were used to characterize C-SiO2 nanocomposites and SiC products. Crystalline SiC was not formed in the mesoporous C-SiO2 nanocomposites with a low carbon content (e.g. C/SiO2 ratio = 1.01) at 1450 °C. However, when a given amount of PCS was infiltrated into the mesoporous C-SiO2, SiC nanofibers and nanoparticles were produced at 1450 °C even in the low carbon content sample. The major morphology formed from the mesoporous C-SiO2 nanocomposites without PCS infiltration was nanoparticles, while nanofibers dominated in the products of the PCS infiltrated compositions. The results indicate that the conversion of PCS into SiC nuclei in mesopores prior to carbothermal reduction has facilitated the formation of SiC nanofibers. Therefore infiltration of seeds into mesopores of C-SiO2 precursors appears to be an effective means in accelerating the reaction and controlling of nanostructures of silicon carbide.

Dopant Activation in Boron-Doped a-Si:H and a-SiC:H by Thermal Annealing and Light-Soaking

1995 ◽  
Vol 377 ◽  
Author(s):  
Masao Isomura ◽  
Yoshihiro Hishikawa ◽  
Shinya Tsuda
Keyword(s):  
Carbon Content ◽  
Thermal Annealing ◽  
Thermal History ◽  
Dark Conductivity ◽  
Low Carbon ◽  
High Carbon ◽  
High Carbon Content ◽  
Boron Doped ◽  
Mobile Hydrogen ◽  
The Stability

ABSTRACTThe effects of thermal history and light-soaking are systematically studied on boron-doped a-Si:H and a-SiC:H. Light-soaking increases dark conductivity at a low carbon content but decreases it at a high carbon content. This reaction is reversible, and the dark conductivity recovers to the initial value with thermal annealing. The effect of thermal history is also influenced by carbon content in samples deposited at a relatively low temperature (110°C). The increase in dark conductivity occurs with thermal annealing at a higher temperature than the deposition temperature at a high carbon content. But this effect is not significant at a low carbon content. These phenomena can be explained by the hydrogen passivation of four-fold boron, and the hydrogen motion and trapping in the network. The present model suggests that a microstructure containing deep traps of mobile hydrogen contributes to improvement in the stability of a-Si:H and its alloys.

Carbon–silica alloy material as silicon carbide precursor prepared from phenol resin and ethyl silicate

1999 ◽  
Vol 14 (12) ◽  
pp. 4587-4593 ◽  
Author(s):  
Masaki Narisawa ◽  
Kentaro Yamane ◽  
Yoshio Okabe ◽  
Kiyohito Okamura ◽  
Yasuo Kurachi
Keyword(s):  
Silicon Carbide ◽  
Carbon Content ◽  
Liquid Mixtures ◽  
Silica Content ◽  
Water Soluble ◽  
Ethyl Silicate ◽  
Low Carbon ◽  
Phenol Resin ◽  
Organic Hybrid ◽  
Alloy Material

Three kinds of inorganic–organic hybrid gel sheets were prepared from the liquid mixtures of ethyl silicate and water–soluble phenol resin. The prepared transparent gel sheets were fired at various temperatures. The density of the fired sheets jumped up at 773–1023 K with disappearance of organic groups. The sheets kept the prepared shape after the 1273 K firing, and their density increased with the silica content. After the firing at 1873 K, the sheets with high carbon content (C/SiO2: 5.60, 3.52) were converted into the sheets composed of silicon carbide aggregate with excess carbon, while the sheet with low carbon content (C/SiO2: 1.43) was converted into the fragile powders.

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