Optoelectronic Properties of a-SiC:H Studied by Time-Resolved Microwave Photoconductivity and Photoinduced Absorption Measurements

1992 ◽  
Vol 258 ◽  
Author(s):  
C. Swiatkowski ◽  
D. Herm ◽  
W. Hirsch ◽  
M. Kunst
Keyword(s):  
Carbon Content ◽  
Drift Mobility ◽  
Optoelectronic Properties ◽  
Electron Trapping ◽  
Electron Drift ◽  
Low Carbon ◽  
Photoinduced Absorption ◽  
Time Resolved ◽  
Electron Drift Mobility ◽  
Absorption Measurements

ABSTRACTThe optoelectronic properties of a-SiC:H alloys with different carbon content are investigated with time resolved photoconductivity and photoinduced absorption measurements. It is shown that the electron drift mobility decreases with increasing carbon content. Also a weak increase of deep electron trapping with increasing carbon content is suggested by the experimental data. The recombination does not seem to be strongly changed by the presence of carbon at least at low carbon content.

Electron drift mobility in hydrogenated amorphous Si1−xCxwith a low carbon content

1993 ◽  
Vol 68 (3) ◽  
pp. 173-178 ◽  
Author(s):  
Ö. Öktü ◽  
H. Tolunay ◽  
G. J. Adriaenssens ◽  
S. D. Baranovskii ◽  
W. Lauwerens
Keyword(s):  
Carbon Content ◽  
Drift Mobility ◽  
Electron Drift ◽  
Low Carbon ◽  
Hydrogenated Amorphous ◽  
Electron Drift Mobility

Deposition Temperature and Optoelectronic Properties of a-Si:H Films

1992 ◽  
Vol 258 ◽  
Author(s):  
C. S. Wiatkowski ◽  
W. Hirsch ◽  
O. Kunst
Keyword(s):  
Electronic Properties ◽  
Deposition Temperature ◽  
Drift Mobility ◽  
Ex Situ ◽  
Electron Drift ◽  
Microwave Conductivity ◽  
Time Resolved ◽  
Transient Photoconductivity ◽  
Electron Drift Mobility

ABSTRACTIn the present work the change of the opto-electronic properties of intrinsic a-Si:H films as a function of their deposition temperature is investigated by transient photoconductivity measurements with the contactless Time Resolved Microwave Conductivity (TRMC) technique. As well in-situ as ex-situ TRMC-measurements will be presented. It is concluded that the electron drift mobility for a-Si:H films deposited in the temperature range between 200° C and 300° C does not depend on the deposition temperature. For temperatures below 200° C the electron drift mobility decreases with decreasing deposition temperature. Annealing of opto-electronic properties of intrinsic a-Si:H films deposited at lower temperatures is observed.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

scholarly journals Modulated photoconductivity study of electron drift mobility in amorphous silicon

2000 ◽  
Vol 87 (6) ◽  
pp. 2901-2909 ◽  
Author(s):  
K. Hattori ◽  
M. Iida ◽  
T. Hirao ◽  
H. Okamoto
Keyword(s):  
Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Electron Drift Mobility

scholarly journals Effect of morphology on electron drift mobility in porousTiO2

2004 ◽  
Vol 6 (3) ◽  
pp. 141-147 ◽  
Author(s):  
B. O. Aduda ◽  
P. Ravirajan ◽  
K. L. Choy ◽  
J. Nelson
Keyword(s):  
Titanium Dioxide ◽  
Solar Cells ◽  
Electron Transport ◽  
Reactive Sputtering ◽  
Porous Titanium ◽  
Drift Mobility ◽  
Electron Drift ◽  
Film Morphology ◽  
Deposited Films ◽  
Electron Drift Mobility

Porous titanium dioxide is an attractive material for solar cell application on account of its stability, electron transport properties, and the possibilities for controlling surface morphology as well as for its ease of fabrication and low cost. NanostructuredTiO2has been intensively studied for applications to dye sensitised solar cells. The performance of the titanium dioxide based solar cells is influenced, among other factors, by the electron mobility of the porous titanium dioxide. Different fabrication processes for porous titanium films result in different film morphology, which in turn affects the electron transport. We have employed three different techniques namely, electrostatic spray assisted vapour deposition (ESAVD), D.C. reactive sputtering, and doctor blading of sol-gel dispersions to deposit thinTiO2films onto indium tin oxide (ITO) coated glass substrates. All these films exhibited only the anatase phase as confirmed by X-ray diffraction analysis. Using the time-of-flight technique, the electron drift mobility in the porousTiO2films was measured. The results show that in the low field region (<55,000 Vcm−1) the mobility, in all the films, were in the range of10−7to10−6cm2Vs−1. The drift mobility in the films prepared by reactive sputtering was consistently higher than in the films prepared by the two other techniques. Sputter deposited films had lower porosity (∼10% and 36% for normal-, and oblique (60∘)-angle deposited films) compared to∼50% for films deposited by the two other techniques. The relationship between the drift mobility and film morphology is discussed with the aid of scanning electron microscopy studies.

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