Dependence of optimal growth temperature on carbon content in hydrogenated amorphous silicon carbide alloys

K. Winer

doi:10.1063/1.102209

Dependence of optimal growth temperature on carbon content in hydrogenated amorphous silicon carbide alloys

Applied Physics Letters ◽

10.1063/1.102209 ◽

1989 ◽

Vol 55 (17) ◽

pp. 1759-1761 ◽

Cited By ~ 13

Author(s):

K. Winer

Keyword(s):

Silicon Carbide ◽

Carbon Content ◽

Amorphous Silicon ◽

Growth Temperature ◽

Hydrogenated Amorphous Silicon ◽

Optimal Growth ◽

Optimal Growth Temperature ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD

Thin Solid Films ◽

10.1016/j.tsf.2017.05.041 ◽

2017 ◽

Vol 636 ◽

pp. 85-92 ◽

Cited By ~ 7

Author(s):

İbrahim Güneş ◽

Kıvanç Sel

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Carbon Content ◽

Amorphous Silicon ◽

Room Temperature ◽

Hydrogenated Amorphous Silicon ◽

Plasma Power ◽

Amorphous Silicon Carbide ◽

Room Temperature Photoluminescence ◽

Hydrogenated Amorphous

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Characterization of hydrogenated amorphous silicon carbide films

10.1117/12.57018 ◽

1992 ◽

Author(s):

S. Uthanna

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon Carbide Alternating-Current Thin-Film Light-Emitting Diodes

Journal of The Electrochemical Society ◽

10.1149/1.2742806 ◽

2007 ◽

Vol 154 (8) ◽

pp. H687

Author(s):

Rong-Hwei Yeh ◽

Ginn-Horng Chen ◽

Shih-Yung Lo ◽

Jyh-Wong Hong

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Light Emitting Diodes ◽

Hydrogenated Amorphous Silicon ◽

Alternating Current ◽

Amorphous Silicon Carbide ◽

Light Emitting ◽

Hydrogenated Amorphous

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Growth of hydrogenated amorphous silicon carbide films from hydrocarbon gas of methane series mixed with silane and their properties

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(83)90643-9 ◽

1983 ◽

Vol 59-60 ◽

pp. 553-556 ◽

Cited By ~ 19

Author(s):

S. Nitta ◽

A. Hatano ◽

M. Yamada ◽

M. Watanabe ◽

M. Kawai

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrocarbon Gas ◽

Hydrogenated Amorphous

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The effect of relatively low hydrogen dilution on the properties of carbon-rich hydrogenated amorphous silicon carbide films

Journal of Physics Conference Series ◽

10.1088/1742-6596/276/1/012173 ◽

2011 ◽

Vol 276 ◽

pp. 012173 ◽

Cited By ~ 4

Author(s):

Zhe Li ◽

Juncao Bian ◽

Haiyan He ◽

Xiwen Zhang ◽

Gaorong Han

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogen Dilution ◽

Hydrogenated Amorphous

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Optoelectronic and Structural Properties of Good Quality Hydrogenated Amorphous Silicon Carbide Films Deposited by Hot Wire Assisted RF Plasma Deposition Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5480 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5480-5484 ◽

Cited By ~ 4

Author(s):

S. Chattopadhyay ◽

Debabrata Das ◽

A. K. Barua ◽

D. L. Williamson ◽

S. T. Kshirsagar

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Structural Properties ◽

Plasma Deposition ◽

Hydrogenated Amorphous Silicon ◽

Rf Plasma ◽

Hot Wire ◽

Deposition Technique ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Silicon content influence on structure and photoluminescence properties of carbon rich hydrogenated amorphous silicon carbide thin films

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.04.226 ◽

2018 ◽

Vol 753 ◽

pp. 320-328 ◽

Cited By ~ 12

Author(s):

Mingming Li ◽

Lihua Jiang ◽

Yihua Sun ◽

Ting Xiao ◽

Peng Xiang ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Silicon Content ◽

Hydrogenated Amorphous Silicon ◽

Photoluminescence Properties ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Window Effects of Hydrogenated Amorphous Silicon Carbide in a p-i-n a-Si Solar Cell

Japanese Journal of Applied Physics ◽

10.7567/jjaps.21s1.297 ◽

1982 ◽

Vol 21 (S1) ◽

pp. 297 ◽

Cited By ~ 14

Author(s):

Yoshihisa Tawada ◽

Masataka Kondo ◽

Hiroaki Okamoto ◽

Yoshihiro Hamakawa

Keyword(s):

Silicon Carbide ◽

Solar Cell ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Si Solar Cell ◽

Hydrogenated Amorphous ◽

Window Effects

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Observation of valence‐band discontinuity of hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction by photocurrent‐voltage measurements

Applied Physics Letters ◽

10.1063/1.98242 ◽

1987 ◽

Vol 50 (5) ◽

pp. 248-249 ◽

Cited By ~ 8

Author(s):

Yoshinobu Okayasu ◽

Keitaro Fukui ◽

Mitsuo Matsumura

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Valence Band ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous ◽

Valence Band Discontinuity

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Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique

Applied Surface Science ◽

10.1016/j.apsusc.2012.12.176 ◽

2013 ◽

Vol 270 ◽

pp. 287-291 ◽

Cited By ~ 11

Author(s):

S.X. Li ◽

Y.Q. Cao ◽

J. Xu ◽

Y.J. Rui ◽

W. Li ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Layer By Layer ◽

Hydrogen Annealing ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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