Influence of the Post-Synthesis Annealing on Device Performance of PbS Quantum Dot Photoconductive Detectors

2018 ◽  
Author(s):  
Yuansheng Shi ◽  
Jinming Hu ◽  
Yurong Jiang ◽  
Muhammad Sulaman ◽  
Shengyi Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Device Performance ◽  
Photoconductive Detectors ◽  
Post Synthesis ◽  
Pbs Quantum Dot

scholarly journals Novel post-synthesis purification strategies and the ligand exchange processes in simplifying the fabrication of PbS quantum dot solar cells

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30707-30715
Author(s):  
Anju Elsa Tom ◽  
Ajith Thomas ◽  
V. V. Ison
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
Quantum Dot Solar Cells ◽  
Exchange Processes ◽  
Post Synthesis ◽  
Pbs Quantum Dot

Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells.

Influence of post-synthesis annealing on PbS quantum dot solar cells

2017 ◽  
Vol 42 ◽  
pp. 309-315 ◽  
Author(s):  
Haowei Wang ◽  
Shengyi Yang ◽  
Yishan Wang ◽  
Junfeng Xu ◽  
Yueli Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Post Synthesis ◽  
Pbs Quantum Dot

Enhanced mobility in PbS quantum dot films via PbSe quantum dot mixing for optoelectronic applications

2019 ◽  
Vol 7 (15) ◽  
pp. 4497-4502 ◽  
Author(s):  
Long Hu ◽  
Shujuan Huang ◽  
Robert Patterson ◽  
Jonathan E. Halpert
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Device Performance ◽  
Charge Mobility ◽  
Solid Films ◽  
Enhanced Mobility ◽  
Optoelectronic Applications ◽  
Pbs Quantum Dots ◽  
Pbs Quantum Dot

PbSe quantum dots are mixed into PbS quantum dots to form mixed quantum dots for enhancing device performance in optoelectronic applications due to improved charge mobility in solid films.

scholarly journals Stable PbS quantum dot ink for efficient solar cells by solution-phase ligand engineering

2019 ◽  
Vol 7 (26) ◽  
pp. 15951-15959 ◽  
Author(s):  
Mengfan Gu ◽  
Yongjie Wang ◽  
Fan Yang ◽  
Kunyuan Lu ◽  
Ye Xue ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Colloidal Stability ◽  
Solution Phase ◽  
Device Performance ◽  
Lead Halide ◽  
Pbs Quantum Dot

A multiple-passivation strategy by solution-phase ligand engineering in lead halide exchanged QDs ink is presented, which result in remarkably improved colloidal stability of QDs ink and enhanced device performance.

A p-Type PbS Quantum Dot Ink with Improved Stability for Solution Processable Optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Chemical Characterization ◽  
Single Step ◽  
Improved Stability ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

scholarly journals Tailoring the Geometry of Bottom-Up Nanowires: Application to High Efficiency Single Photon Sources

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1201
Author(s):  
Dan Dalacu ◽  
Philip J. Poole ◽  
Robin L. Williams
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Emission Rate ◽  
Single Photon ◽  
Collection Efficiency ◽  
Photon Emission ◽  
Device Performance ◽  
Bottom Up ◽  
Selective Area ◽  
Photon Generation

For nanowire-based sources of non-classical light, the rate at which photons are generated and the ability to efficiently collect them are determined by the nanowire geometry. Using selective-area vapour-liquid-solid epitaxy, we show how it is possible to control the nanowire geometry and tailor it to optimise device performance. High efficiency single photon generation with negligible multi-photon emission is demonstrated using a quantum dot embedded in a nanowire having a geometry tailored to optimise both collection efficiency and emission rate.

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

Crack-Free Conjugated PbS Quantum Dot–Hole Transport Layers for Solar Cells

2021 ◽  
Author(s):  
Ashish Sharma ◽  
Neha V. Dambhare ◽  
Jayanta Bera ◽  
Satyajit Sahu ◽  
Arup K. Rath
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Hole Transport ◽  
Hole Transport Layers ◽  
Pbs Quantum Dot
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