scholarly journals Stable PbS quantum dot ink for efficient solar cells by solution-phase ligand engineering

2019 ◽  
Vol 7 (26) ◽  
pp. 15951-15959 ◽  
Author(s):  
Mengfan Gu ◽  
Yongjie Wang ◽  
Fan Yang ◽  
Kunyuan Lu ◽  
Ye Xue ◽  
...  

A multiple-passivation strategy by solution-phase ligand engineering in lead halide exchanged QDs ink is presented, which result in remarkably improved colloidal stability of QDs ink and enhanced device performance.

2019 ◽  
Vol 203 ◽  
pp. 110163 ◽  
Author(s):  
Hossein Beygi ◽  
Seyed Abdolkarim Sajjadi ◽  
Abolfazl Babakhani ◽  
Jeff F. Young ◽  
Frank C.J.M. van Veggel

Author(s):  
Ashish Sharma ◽  
Neha V. Dambhare ◽  
Jayanta Bera ◽  
Satyajit Sahu ◽  
Arup K. Rath

2017 ◽  
Vol 9 (47) ◽  
pp. 41104-41110 ◽  
Author(s):  
Jin Hyuck Heo ◽  
Min Hyuk Jang ◽  
Min Ho Lee ◽  
Dong Hee Shin ◽  
Do Hun Kim ◽  
...  

ACS Nano ◽  
2014 ◽  
Vol 8 (12) ◽  
pp. 12814-12825 ◽  
Author(s):  
Jianbo Gao ◽  
Jianbing Zhang ◽  
Jao van de Lagemaat ◽  
Justin C. Johnson ◽  
Matthew C. Beard

2012 ◽  
Vol 22 (33) ◽  
pp. 16914 ◽  
Author(s):  
Guangda Niu ◽  
Liduo Wang ◽  
Rui Gao ◽  
Beibei Ma ◽  
Haopeng Dong ◽  
...  

2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.


2020 ◽  
Vol 12 (44) ◽  
pp. 49840-49848
Author(s):  
Chandan Mahajan ◽  
Ashish Sharma ◽  
Arup K. Rath

2020 ◽  
Vol 2 (1) ◽  
pp. 286-295 ◽  
Author(s):  
M. Kamruzzaman

ZnO nanorod (NR) based inorganic quantum dot sensitized solar cells have gained tremendous attention for use in next generation solar cells.


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