Enhanced mobility in PbS quantum dot films via PbSe quantum dot mixing for optoelectronic applications

2019 ◽  
Vol 7 (15) ◽  
pp. 4497-4502 ◽  
Author(s):  
Long Hu ◽  
Shujuan Huang ◽  
Robert Patterson ◽  
Jonathan E. Halpert
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Device Performance ◽  
Charge Mobility ◽  
Solid Films ◽  
Enhanced Mobility ◽  
Optoelectronic Applications ◽  
Pbs Quantum Dots ◽  
Pbs Quantum Dot

PbSe quantum dots are mixed into PbS quantum dots to form mixed quantum dots for enhancing device performance in optoelectronic applications due to improved charge mobility in solid films.

scholarly journals Air-stable PbS quantum dots synthesized with slow reaction kinetics via a PbBr2 precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (84) ◽  
pp. 68579-68586 ◽  
Author(s):  
Lin Yuan ◽  
Robert Patterson ◽  
Wenkai Cao ◽  
Zewen Zhang ◽  
Zhilong Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
Quantum Dot ◽  
Reaction Kinetics ◽  
Slow Reaction ◽  
Pbs Quantum Dots ◽  
Pbs Quantum Dot

High resolution of EDX image shows the bromine located on same position of PbS quantum dot.

Investigation of Quantum Dot Solar Cell Device Performance

2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Band Gap ◽  
Control Device ◽  
Open Circuit ◽  
Device Performance ◽  
Intermediate Band ◽  
Control Devices

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.

scholarly journals Ligand dependent oxidation dictates the performance evolution of high efficiency PbS quantum dot solar cells

2020 ◽  
Vol 4 (1) ◽  
pp. 108-115 ◽  
Author(s):  
David Becker-Koch ◽  
Miguel Albaladejo-Siguan ◽  
Vincent Lami ◽  
Fabian Paulus ◽  
Hengyang Xiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Lead Sulfide ◽  
High Efficiency ◽  
Photovoltaic Performance ◽  
Continuous Illumination ◽  
Quantum Dot Solar Cells ◽  
The Stability ◽  
Pbs Quantum Dots ◽  
Pbs Quantum Dot

The stability of lead sulfide (PbS) quantum dots (QD) under continuous illumination in oxygenated environments depends on the choice of ligands, determining the evolution of photovoltaic performance of high efficiency PbS QD solar cells.

scholarly journals An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16693-16699 ◽  
Author(s):  
Ajith Thomas ◽  
R. Vinayakan ◽  
V. V. Ison
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Quantum Dot ◽  
Buffer Layer ◽  
Active Layer ◽  
Bulk Heterojunction ◽  
Hybrid Solar Cell ◽  
Device Performance ◽  
Cdse Quantum Dots ◽  
Cdse Quantum Dot

An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.

scholarly journals Novel post-synthesis purification strategies and the ligand exchange processes in simplifying the fabrication of PbS quantum dot solar cells

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30707-30715
Author(s):  
Anju Elsa Tom ◽  
Ajith Thomas ◽  
V. V. Ison
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
Quantum Dot Solar Cells ◽  
Exchange Processes ◽  
Post Synthesis ◽  
Pbs Quantum Dot

Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells.

Efficient PbS quantum dot solar cells employing a conventional structure

2017 ◽  
Vol 5 (45) ◽  
pp. 23960-23966 ◽  
Author(s):  
Kunyuan Lu ◽  
Yongjie Wang ◽  
Jianyu Yuan ◽  
Zequn Cui ◽  
Guozheng Shi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Low Cost ◽  
Lead Chalcogenide ◽  
Solution Processed ◽  
Quantum Dot Solar Cells ◽  
Conventional Structure ◽  
New Generation ◽  
Pbs Quantum Dot

New-generation solar cells based on colloidal lead chalcogenide (PbX) quantum dots (CQDs) are promising low-cost solution-processed photovoltaics.

Quantum-Dot-Sensitized Solar Cells with Water-Soluble and Air-Stable PbS Quantum Dots

2014 ◽  
Vol 118 (10) ◽  
pp. 5142-5149 ◽  
Author(s):  
Askhat N. Jumabekov ◽  
Felix Deschler ◽  
Daniel Böhm ◽  
Laurence M. Peter ◽  
Jochen Feldmann ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Water Soluble ◽  
Sensitized Solar Cells ◽  
Pbs Quantum Dots

Design and Implementation of Colloidal Quantum Dot Field-Effect Transistors

2014 ◽  
Vol 668-669 ◽  
pp. 818-821
Author(s):  
Hai Yan Wang ◽  
Ya Ting Zhang ◽  
Xiao Xian Song ◽  
Lu Fan Jin ◽  
Hai Tao Dai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Structure Design ◽  
Layer By Layer ◽  
Gate Bias ◽  
Large Area ◽  
Photoconductive Detectors ◽  
Pbs Quantum Dots

With the breakthrough of mobility in quantum dot electric field transistors (Q-EFTs), the potential application in these functional devices has revealed and been paid more attentions, due to flexibility in design, low cost, facility for processing and large area. One of the most important applications of FETs is the photoconductive detector. However, these functional FETs have less been reported. In this work, colloidal PbS Q-FETs were successfully fabricated by reasonable structure design and layer-by-layer depositon technique PbS quantum-dots. The bipolar property was demonstrated by the output and transfer characteristics, as devices work in I and III quadrants simultaneously. The mobilities of electron and hole are 0.16 cm2/(V⋅s) and 0.28 cm2/(V⋅s), respectively. Q-FETs work as photoconductive detectors at both positive and negative gate bias voltages. Under constant gate bias, photocurrent increase exponentially with the intensity of light. The responding region consisted with the absorption range of PbS quantum dots. A linearity was found in drain voltage and incidence of laser power, the ratio was attributing to 0.0019 (μW⋅V)-1.

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