scholarly journals Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]

2015 ◽  
Vol 106 (4) ◽  
pp. 049903
Author(s):  
Masanobu Hiroki ◽  
Kazuhide Kumakura ◽  
Yasuyuki Kobayashi ◽  
Tetsuya Akasaka ◽  
Toshiki Makimoto ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Heating Effect ◽  
High Electron Mobility ◽  
Self Heating ◽  
Electron Mobility Transistors ◽  
Substrate Transfer

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

2014 ◽  
Vol 105 (19) ◽  
pp. 193509 ◽  
Author(s):  
Masanobu Hiroki ◽  
Kazuhide Kumakura ◽  
Yasuyuki Kobayashi ◽  
Tetsuya Akasaka ◽  
Toshiki Makimoto ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Heating Effect ◽  
High Electron Mobility ◽  
Self Heating ◽  
Electron Mobility Transistors ◽  
Substrate Transfer

scholarly journals Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

2021 ◽  
Vol 130 (15) ◽  
pp. 155107
Author(s):  
Alexander Y. Choi ◽  
Iretomiwa Esho ◽  
Bekari Gabritchidze ◽  
Jacob Kooi ◽  
Austin J. Minnich
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Heating ◽  
Electron Mobility Transistors
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