Electrical characterization of metal-semiconductor-metal structure of pseudomorphic InGaN on GaN: Simulation and experiments

2016 ◽  
Vol 213 (6) ◽  
pp. 1602-1609 ◽  
Author(s):  
Jun Ohsawa
Keyword(s):  
Electrical Characterization ◽  
Metal Structure ◽  
Metal Semiconductor Metal

Near Infrared Light Detectors Based on Uhvcvd Epitaxial Ge on Si (100)

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Colace ◽  
G. Masini ◽  
F. Galluzzi ◽  
G. Assanto ◽  
G. Capellini ◽  
...  
Keyword(s):  
Near Infrared ◽  
Normal Incidence ◽  
Metal Structure ◽  
Atomic Scale ◽  
Infrared Light ◽  
Light Penetration ◽  
Silicon Chips ◽  
Metal Semiconductor Metal ◽  
Photo Detectors

AbstractIn the present work we investigate photo-detectors based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. By using this procedure it was possible to grow films having thicknesses comparable with light penetration depth in the 1.3–1.6μm spectral range. The films exhibited flatness on the atomic scale. Two kinds of detectors were investigated: vertical heterojunction diodes and a planar Metal-Semiconductor-Metal structure. The detectors show a good responsivity at normal incidence at both 1.3 and 1.55μm. The photocurrent increases with the voltage applied, reaching a maximum responsivity of 0.24 A/W at 1.3μm under a bias of IV. A complete optoelectronic characterization of the fabricated devices is performed. The results confirm the feasibility of the proposed approach for the fabrication of 1.3–1.55μm near infrared photodetectors integrated on silicon chips.

Fabrication and Characterization of Graphene Induced Metal Semiconductor Metal (MSM) Structure for Detection and Sensing Applications

2020 ◽  
Author(s):  
Shoaib Alam ◽  
Ahmed Shuja ◽  
Erum Jamil ◽  
Faryal Siddique ◽  
Ali Raamiz Siddiqui
Keyword(s):  
Graphene Layer ◽  
Electrical Characterization ◽  
Monolayer Graphene ◽  
Original Matrix ◽  
Force Microscopy ◽  
Sensing Applications ◽  
Atomic Force ◽  
Metal Semiconductor Metal ◽  
Msm Structure

The demand for miniaturization of electronic devices has lent to the development of graphene-based hybrid structures, which include the Metal-Semiconductor-Metal device. In this work, we develop such a device by growing monolayer graphene layer on top of Nickel to form the basic structural matrix. Four different variants of the MSM unit structures have been developed to assess their potential in next generation electronics. The presence of graphene in the original matrix was confirmed via Atomic Force Microscopy, and the optical response of the graphene layer was further studied using Spectroscopic Ellipsometry in UV-Vis-NIR regime; Forouhi-Bloomer model was used to analyze the ellipsometry data. Hall effect and other electrical characterization measurements were conducted to analyze the electrical properties of the fabricated devices.

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

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