Synthesis of silicon oxide nanowires by the GJ EBP CVD method using different diluent gases

2016 ◽  
Vol 213 (7) ◽  
pp. 1774-1782 ◽  
Author(s):  
S. Ya. Khmel ◽  
E. A. Baranov ◽  
A. V. Zaikovskii ◽  
A. O. Zamchiy ◽  
E. A. Maximovskiy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Cvd Method

scholarly journals Controlled Fabrication of Quality ZnO NWs/CNTs and ZnO NWs/Gr Heterostructures via Direct Two-Step CVD Method

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1836
Author(s):  
Nicholas Schaper ◽  
Dheyaa Alameri ◽  
Yoosuk Kim ◽  
Brian Thomas ◽  
Keith McCormack ◽  
...  
Keyword(s):  
Direct Synthesis ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Materials Synthesis ◽  
Oxide Nanowires ◽  
Cvd Method ◽  
Thermal Actuators ◽  
Potential Applications ◽  
Walled Carbon Nanotubes ◽  
Scalable Production

A novel and advanced approach of growing zinc oxide nanowires (ZnO NWs) directly on single-walled carbon nanotubes (SWCNTs) and graphene (Gr) surfaces has been demonstrated through the successful formation of 1D–1D and 1D–2D heterostructure interfaces. The direct two-step chemical vapor deposition (CVD) method was utilized to ensure high-quality materials’ synthesis and scalable production of different architectures. Iron-based universal compound molecular ink was used as a catalyst in both processes (a) to form a monolayer of horizontally defined networks of SWCNTs interfaced with vertically oriented ZnO NWs and (b) to grow densely packed ZnO NWs directly on a graphene surface. We show here that our universal compound molecular ink is efficient and selective in the direct synthesis of ZnO NWs/CNTs and ZnO NWs/Gr heterostructures. Heterostructures were also selectively patterned through different fabrication techniques and grown in predefined locations, demonstrating an ability to control materials’ placement and morphology. Several characterization tools were employed to interrogate the prepared heterostructures. ZnO NWs were shown to grow uniformly over the network of SWCNTs, and much denser packed vertically oriented ZnO NWs were produced on graphene thin films. Such heterostructures can be used widely in many potential applications, such as photocatalysts, supercapacitors, solar cells, piezoelectric or thermal actuators, as well as chemical or biological sensors.

Nanotechnology of nanotubes and nanowires: From aligned carbon nanotubes to silicon oxide nanowires

1998 ◽  
Author(s):  
N. Grobert ◽  
J. P. Hare ◽  
W. K. Hsu ◽  
H. W. Kroto ◽  
A. J. Pidduck ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Aligned Carbon Nanotubes

Fabrication of Surface Plasmon-Coupled Si Nanodots in Au-Embedded Silicon Oxide Nanowires

2010 ◽  
Vol 22 (22) ◽  
pp. 2421-2425 ◽  
Author(s):  
Gyeong-Su Park ◽  
Hyuksang Kwon ◽  
Eun Kyung Lee ◽  
Seong Keun Kim ◽  
Jun Ho Lee ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Silicon Oxide ◽  
Oxide Nanowires

Indium-Assisted Plasma-Enhanced Low-Temperature Growth of Silicon Oxide Nanowires

2018 ◽  
Vol 215 (12) ◽  
pp. 1700749 ◽  
Author(s):  
Sergey Khmel ◽  
Evgeniy Baranov ◽  
Andrey Barsukov ◽  
Alexandr Zamchiy ◽  
Alexey Zaikovskii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Temperature Growth ◽  
Oxide Nanowires ◽  
Low Temperature Growth

Tin-catalyzed oriented array of microropes of silicon oxide nanowires synthesized on different substrates

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 99-106 ◽  
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
S. Ya Khmel
Keyword(s):  
Silicon Oxide ◽  
Oxide Nanowires

Ion Implanted SiO2 Substrates for Nucleating Silicon Oxide Nanowire Growth

2009 ◽  
Vol 1181 ◽  
Author(s):  
Jason L. Johnson ◽  
Yongho Choi ◽  
Ant Ural
Keyword(s):  
Growth Temperature ◽  
Gas Flow ◽  
Silicon Oxide ◽  
Three Dimensional ◽  
High Growth ◽  
Implantation Dose ◽  
Nanowire Growth ◽  
Nanoscale Device ◽  
Oxide Nanowires ◽  
Submicron Scale

AbstractWe experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydrogen to nucleate silicon oxide nanowires. We study the effect of implantation dose and energy, growth temperature, and H2 gas flow on the SiOx nanowire growth. We find that sufficiently high implant dose, high growth temperature, and the presence of H2 gas flow are crucial parameters for silicon oxide nanowire growth. We also demonstrate the patterned growth of silicon oxide nanowires in localized areas by lithographic patterning and etching of the implanted SiO2 substrates before growth. This works opens up the possibility of growing silicon oxide nanowires directly from solid substrates, controlling the location of nanowires at the submicron scale, and integrating them into nonplanar three-dimensional nanoscale device structures.

Formation and photoluminescence properties of amorphous silicon oxide nanowires

2011 ◽  
Vol 65 (19-20) ◽  
pp. 2979-2981 ◽  
Author(s):  
Seonhee Jang ◽  
Youngil Lee ◽  
Sungeun Kim ◽  
Jungwook Seo ◽  
Donghoon Kim
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Photoluminescence Properties ◽  
Oxide Nanowires ◽  
Amorphous Silicon Oxide
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