Nanotechnology of nanotubes and nanowires: From aligned carbon nanotubes to silicon oxide nanowires

1998 ◽  
Author(s):  
N. Grobert ◽  
J. P. Hare ◽  
W. K. Hsu ◽  
H. W. Kroto ◽  
A. J. Pidduck ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Aligned Carbon Nanotubes

ChemInform Abstract: Nanotechnology of Nanotubes and Nanowires: From Aligned Carbon Nanotubes to Silicon Oxide Nanowires

ChemInform ◽  
2010 ◽  
Vol 30 (13) ◽  
pp. no-no
Author(s):  
N. Grobert ◽  
J. P. Hare ◽  
W. K. Hsu ◽  
H. W. Kroto ◽  
A. J. Pidduck ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Aligned Carbon Nanotubes

Hierarchical Nanostructure Produced by Growing Carbon Nanotubes on Silicon Oxide Nanowires

2009 ◽  
Vol 12 (12) ◽  
pp. K67
Author(s):  
Hee J. Woo ◽  
Jung H. Kim ◽  
Hyung S. Ahnn ◽  
Chong S. Yoon
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Hierarchical Nanostructure

Carbon Nanotubes Grafted on Silicon Oxide Nanowires

2004 ◽  
Vol 4 (7) ◽  
pp. 712-715 ◽  
Author(s):  
Guowen Meng ◽  
Anyuan Cao ◽  
Ju-Yin Cheng ◽  
Pulickel M. Ajayan
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires

Hierarchical Nanostructure Produced by Growing Carbon Nanotubes on Silicon Oxide Nanowires

2019 ◽  
Vol 25 (8) ◽  
pp. 991-996
Author(s):  
Hee Jin Woo ◽  
Jung H. Kim ◽  
Duck Kyun Choi ◽  
Chong S. Yoon
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Hierarchical Nanostructure

scholarly journals Electrically Addressable Hybrid Architectures of Zinc Oxide Nanowires Grown on Aligned Carbon Nanotubes

2010 ◽  
Vol 20 (15) ◽  
pp. 2470-2480 ◽  
Author(s):  
Jong G. Ok ◽  
Sameh H. Tawfick ◽  
K. Anne Juggernauth ◽  
Kai Sun ◽  
Yongyi Zhang ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Zinc Oxide ◽  
Zinc Oxide Nanowires ◽  
Hybrid Architectures ◽  
Oxide Nanowires ◽  
Aligned Carbon Nanotubes

Controlling the Aligned Growth of Carbon Nanotubes by Substrate Selection and Patterning

2001 ◽  
Vol 706 ◽  
Author(s):  
Y. Jung ◽  
B. Q. Wei ◽  
R. Vajtai ◽  
J. Ward ◽  
R. Zhang ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Substrate Selection ◽  
Micro Fabrication ◽  
Thermal Chemical Vapor Deposition ◽  
Cvd Method ◽  
Aligned Carbon Nanotubes ◽  
Aligned Growth

AbstractTo build nanotube based nanodevices, controlling the growth of aligned carbon nanotubes will be essential. Our group reported a method for growing aligned nanotube selectively on SiO2 surfaces by thermal chemical vapor deposition (CVD) method from xylene-metallocene mixtures. Here we will describe further studies on the roles of shape and thickness of patterned oxide structures for the controlled growth of aligned carbon nanotubes. By designing the shapes and the thickness of silicon oxide patterns with conventional micro fabrication techniques like lithography and dry & wet etching we could control the growth position as well as orientation of aligned carbon nanotubes precisely.

Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Plasma Cvd ◽  
Helicon Plasma ◽  
Plasma Enhanced Cvd ◽  
Turn On ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

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