Enhanced photoluminescence of silicon oxide nanowires brought by prolonged thermal treatment during growth

2009 ◽  
Vol 105 (7) ◽  
pp. 076102 ◽  
Author(s):  
Jung H. Kim ◽  
Hyeun H. An ◽  
Chong S. Yoon
Keyword(s):  
Thermal Treatment ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Enhanced Photoluminescence

Nanotechnology of nanotubes and nanowires: From aligned carbon nanotubes to silicon oxide nanowires

1998 ◽  
Author(s):  
N. Grobert ◽  
J. P. Hare ◽  
W. K. Hsu ◽  
H. W. Kroto ◽  
A. J. Pidduck ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Oxide ◽  
Oxide Nanowires ◽  
Aligned Carbon Nanotubes

Fabrication of Surface Plasmon-Coupled Si Nanodots in Au-Embedded Silicon Oxide Nanowires

2010 ◽  
Vol 22 (22) ◽  
pp. 2421-2425 ◽  
Author(s):  
Gyeong-Su Park ◽  
Hyuksang Kwon ◽  
Eun Kyung Lee ◽  
Seong Keun Kim ◽  
Jun Ho Lee ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Silicon Oxide ◽  
Oxide Nanowires

Indium-Assisted Plasma-Enhanced Low-Temperature Growth of Silicon Oxide Nanowires

2018 ◽  
Vol 215 (12) ◽  
pp. 1700749 ◽  
Author(s):  
Sergey Khmel ◽  
Evgeniy Baranov ◽  
Andrey Barsukov ◽  
Alexandr Zamchiy ◽  
Alexey Zaikovskii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Temperature Growth ◽  
Oxide Nanowires ◽  
Low Temperature Growth

Tin-catalyzed oriented array of microropes of silicon oxide nanowires synthesized on different substrates

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 99-106 ◽  
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
S. Ya Khmel
Keyword(s):  
Silicon Oxide ◽  
Oxide Nanowires

Synthesis of Au Nanoparticles Attached to Large-Area Cu-Oxide Nanowires By Thermal Treatment for Artificial Photosynthesis Process

2020 ◽  
Vol MA2020-01 (39) ◽  
pp. 1695-1695
Author(s):  
Jose Fernando Canto-Olvera ◽  
Oscar E. Cigarroa-Mayorga ◽  
Angel Guillen-Cervantes
Keyword(s):  
Thermal Treatment ◽  
Artificial Photosynthesis ◽  
Au Nanoparticles ◽  
Large Area ◽  
Oxide Nanowires

Ion Implanted SiO2 Substrates for Nucleating Silicon Oxide Nanowire Growth

2009 ◽  
Vol 1181 ◽  
Author(s):  
Jason L. Johnson ◽  
Yongho Choi ◽  
Ant Ural
Keyword(s):  
Growth Temperature ◽  
Gas Flow ◽  
Silicon Oxide ◽  
Three Dimensional ◽  
High Growth ◽  
Implantation Dose ◽  
Nanowire Growth ◽  
Nanoscale Device ◽  
Oxide Nanowires ◽  
Submicron Scale

AbstractWe experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydrogen to nucleate silicon oxide nanowires. We study the effect of implantation dose and energy, growth temperature, and H2 gas flow on the SiOx nanowire growth. We find that sufficiently high implant dose, high growth temperature, and the presence of H2 gas flow are crucial parameters for silicon oxide nanowire growth. We also demonstrate the patterned growth of silicon oxide nanowires in localized areas by lithographic patterning and etching of the implanted SiO2 substrates before growth. This works opens up the possibility of growing silicon oxide nanowires directly from solid substrates, controlling the location of nanowires at the submicron scale, and integrating them into nonplanar three-dimensional nanoscale device structures.

Formation and photoluminescence properties of amorphous silicon oxide nanowires

2011 ◽  
Vol 65 (19-20) ◽  
pp. 2979-2981 ◽  
Author(s):  
Seonhee Jang ◽  
Youngil Lee ◽  
Sungeun Kim ◽  
Jungwook Seo ◽  
Donghoon Kim
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Photoluminescence Properties ◽  
Oxide Nanowires ◽  
Amorphous Silicon Oxide
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