Wide-Range Light Emission of Silicon Oxide Nanowires Grown Using Zinc as a Catalyst

2019 ◽  
Vol 69 (5) ◽  
pp. 468-472
Author(s):  
Jong-Hwan YOON*
2012 ◽  
Vol 1 (1) ◽  
pp. 76-80
Author(s):  
Zhongjie Ren ◽  
Rongben Zhang ◽  
Fengwen Yan ◽  
Shidong Jiang ◽  
Feng Wang ◽  
...  

1998 ◽  
Author(s):  
N. Grobert ◽  
J. P. Hare ◽  
W. K. Hsu ◽  
H. W. Kroto ◽  
A. J. Pidduck ◽  
...  

2010 ◽  
Vol 22 (22) ◽  
pp. 2421-2425 ◽  
Author(s):  
Gyeong-Su Park ◽  
Hyuksang Kwon ◽  
Eun Kyung Lee ◽  
Seong Keun Kim ◽  
Jun Ho Lee ◽  
...  

Author(s):  
Kalyan Adhikary ◽  
Sayan Das ◽  
Debasish De ◽  
Anup Mondal ◽  
Utpal Gangopadhyay ◽  
...  

Diamond-like Nanocomposites (DLN) is a newly member in amorphous carbon (a:C) family. It consists of two or more interpenetrated atomic scale network structure. The amorphous silicon oxide (a:SiO) is incorporated within diamond-like carbon (DLC) matrix i.e. a:CH and both the network is interpenetrated by Si-C bond. Hence, the internal stress of deposited DLN film decreases remarkably compare to DLC. The diamond like properties has come due to deform tetrahedral carbon with sp3 configuration and high ratio of sp3 to sp2 bond. The DLN has excellent mechanical, electrical, optical and tribological properties. Those the properties of DLN could be varied over a wide range by changing deposition parameters, precursor and even post deposition treatment also. The range of properties are : Resistivity 10-4 to 1014 Ωcm, hardness 10–22 GPa, coefficient of friction 0.03-0.2, wear factor 0.2-0.4 10-7mm3/Nm, transmission Vis-far IR, modulus of elasticity 150-200 GPa, residual stress 200-300 Mpa, Dielectric constant 3-9 and maximum operating temperature 6000C in oxygen environment and 12000C in O2 free air. Generally, the PECVD method is used to synthesis the DLN film. The most common procedures used for investigation of structure and composition of DLN films are Raman spectroscopy, Fourier transformed infrared spectroscopy (FTIR), HRTEM, FESEM and X-ray photo electron spectroscopy (XPS). Interest in the coating technology has been expressed by nearly every industrial segment including automotive, aerospace, chemical processing, marine, energy, personal care, office equipment, electronics, biomedical and tool and die or in a single line from data to beer in all segment of life. In this review paper, characterization of Diamond-like Nanocomposites is discussed and subsequently different application areas are also elaborated.


1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.


2008 ◽  
Vol 103 (2) ◽  
pp. 024309 ◽  
Author(s):  
C. L. Heng ◽  
O. H. Y. Zalloum ◽  
J. Wojcik ◽  
T. Roschuk ◽  
P. Mascher

2018 ◽  
Vol 215 (12) ◽  
pp. 1700749 ◽  
Author(s):  
Sergey Khmel ◽  
Evgeniy Baranov ◽  
Andrey Barsukov ◽  
Alexandr Zamchiy ◽  
Alexey Zaikovskii ◽  
...  

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.


Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 99-106 ◽  
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
S. Ya Khmel

2009 ◽  
Vol 1181 ◽  
Author(s):  
Jason L. Johnson ◽  
Yongho Choi ◽  
Ant Ural

AbstractWe experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydrogen to nucleate silicon oxide nanowires. We study the effect of implantation dose and energy, growth temperature, and H2 gas flow on the SiOx nanowire growth. We find that sufficiently high implant dose, high growth temperature, and the presence of H2 gas flow are crucial parameters for silicon oxide nanowire growth. We also demonstrate the patterned growth of silicon oxide nanowires in localized areas by lithographic patterning and etching of the implanted SiO2 substrates before growth. This works opens up the possibility of growing silicon oxide nanowires directly from solid substrates, controlling the location of nanowires at the submicron scale, and integrating them into nonplanar three-dimensional nanoscale device structures.


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