Rapid thermal processing annealing challenges for large scale Cu2ZnSnS4thin films

2014 ◽  
Vol 212 (1) ◽  
pp. 103-108 ◽  
Author(s):  
Laura Vauche ◽  
Jérôme Dubois ◽  
Aurélie Laparre ◽  
Marcel Pasquinelli ◽  
Sylvie Bodnar ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Large Scale ◽  
Rapid Thermal Processing

Impact of Patterned Layers on Temperature Non-Uniformity during Rapid Thermal Processing for VLSI-Applications

1989 ◽  
Vol 146 ◽  
Author(s):  
P. Vandenabeele ◽  
K. Maex ◽  
R. De Keersmaecker
Keyword(s):  
Thermal Processing ◽  
Large Scale ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Experimental Results ◽  
Time Dependent ◽  
Optical Characteristics ◽  
Large Temperature ◽  
Oxide Layers ◽  
Patterned Wafers

ABSTRACTThe influence of patterned oxide layers on temperature non-uniformity during RTP is studied. It is shown that large temperature non-uniformities (up to 80 °C) can occur during RTP as a consequence of large scale patterns of thick oxides. The dependence of oxide thickness and pattern geometry on temperature non-uniformity over a wafer is studied. A set of simulation programs is developed to calculate the optical characteristics of a wafer inside a chamber and to calculate the time dependent temperature non-uniformities on patterned wafers. The calculated results agree very well with the experimental results. The simulation program was used to define the optimal optical conditions for RTP systems for minimal temperature non-uniformity due to patterned overlayers on Si.

scholarly journals Nonlinear Model Reduction Strategies for Rapid Thermal Processing Systems

1996 ◽  
Vol 429 ◽  
Author(s):  
Suman Banerjee ◽  
J. Vernon Cole ◽  
Klavs F. Jensen ◽  
A. Emami-Naeni
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Thermal Processing ◽  
Large Scale ◽  
Nonlinear Models ◽  
Rapid Thermal Processing ◽  
Element Model ◽  
Physically Based ◽  
The Finite Element Model ◽  
Low Order

AbstractThis paper presents a systematic way of developing low order nonlinear models from physically- based, large scale finite element models of rapid thermal processing (RTP) systems. The low order model is extracted from transient results of the finite element model using the proper orthogonal decomposition (POD) method. Eigenfunctions obtained from the POD method are used as basis functions in spectral Galerkin expansions of partial differential equations solved by the finite element model to generate the reduced models. Simulation results demonstrate good agreement with steady state and transient data generated from the finite element model.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Some results from CuGaSe 2 solar cells prepared by rapid thermal processing

2000 ◽  
Vol 361-362 ◽  
pp. 454-457 ◽  
Author(s):  
O. Schenker ◽  
M. Klenk ◽  
E. Bucher
Keyword(s):  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

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