Improved diffusion profiles in back-contacted back-junction Si solar cells with an overcompensated boron-doped emitter

2011 ◽  
Vol 208 (12) ◽  
pp. 2871-2883 ◽  
Author(s):  
Christian Reichel ◽  
Martin Bivour ◽  
Filip Granek ◽  
Martin Hermle ◽  
Stefan W. Glunz
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Diffusion Profiles

Generation and annihilation of boron–oxygen related defects in boron-doped Czochralski-grown Si solar cells

2002 ◽  
Vol 91 (8) ◽  
pp. 4853-4856 ◽  
Author(s):  
Tuong Khanh Vu ◽  
Yoshio Ohshita ◽  
Kenji Araki ◽  
Masafumi Yamaguchi
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells

scholarly journals Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(0 0 1) with a pyramid structure consisting of {1 1 1} facets

2017 ◽  
Vol 475 ◽  
pp. 186-191 ◽  
Author(s):  
Tianguo Deng ◽  
Kazuhiro Gotoh ◽  
Ryota Takabe ◽  
Zhihao Xu ◽  
Suguru Yachi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Pyramid Structure

scholarly journals An Analysis of Light Induced Degradation with Optical Source Properties in Boron-Doped P-Type Cz-Si Solar Cells

2014 ◽  
Vol 24 (6) ◽  
pp. 305-309
Author(s):  
Soo Min Kim ◽  
Soohyun Bae ◽  
Young Do Kim ◽  
Sungeun Park ◽  
Yoonmook Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optical Source ◽  
Boron Doped ◽  
Si Solar Cells ◽  
P Type

A comparative study of different emitter diffusion profiles on the performance of Si solar cells

2022 ◽  
Author(s):  
Mukesh Pratap Singh ◽  
Mohd Amir
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Peak Concentration ◽  
Maximum Efficiency ◽  
Back Surface ◽  
Recombination Rates ◽  
Relative Diffusion ◽  
Si Solar Cells ◽  
Different Types ◽  
Diffusion Profiles

Abstract We have investigated the effect of emitter design key parameters such as depth factor and the peak concentration for different types of emitter diffusion profiles (uniform, exponential, Gaussian, and Erfc) on the performance of silicon (Si) solar cells. The value of the depth factor is optimized as 0.1 µm for all these emitter diffusion profiles. Afterward, the peak concentration value is optimized for all the diffusion profiles. A close examination of relative diffusion lengths, conductivities, recombination rates, internal and external quantum efficiencies for these diffusion profiles revealed that among all the considered emitter diffusion profiles, the Erfc profile exhibits the maximum efficiency of 23.53% with an optimized peak concentration of 2×1020 cm-3 for emitter and 1×1019 cm-3 for the back surface filed doping. PC1D was used for all the simulations.

scholarly journals Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cells

2018 ◽  
Vol 216 (10) ◽  
pp. 1800603 ◽  
Author(s):  
Audrey Morisset ◽  
Raphaël Cabal ◽  
Bernadette Grange ◽  
Clément Marchat ◽  
José Alvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Poly Silicon ◽  
Boron Doped ◽  
Si Solar Cells

Novel Boron-Doped p-Type Cu2O Thin Films as a Hole-Selective Contact in c-Si Solar Cells

2020 ◽  
Vol 12 (11) ◽  
pp. 12972-12981 ◽  
Author(s):  
Kurias K. Markose ◽  
Manu Shaji ◽  
Swasti Bhatia ◽  
Pradeep R. Nair ◽  
Kachirayil J. Saji ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Cu2o Thin Films ◽  
P Type

INDUSTRIALIZATION OF a-Si SOLAR CELLS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  
Solar Cells ◽  
Si Solar Cells
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