Highly conducting and preferred oriented boron doped nc–Si films for window layers in nc–Si solar cells

2016 ◽  
Author(s):  
Praloy Mondal ◽  
Debajyoti Das
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Si Films

Generation and annihilation of boron–oxygen related defects in boron-doped Czochralski-grown Si solar cells

2002 ◽  
Vol 91 (8) ◽  
pp. 4853-4856 ◽  
Author(s):  
Tuong Khanh Vu ◽  
Yoshio Ohshita ◽  
Kenji Araki ◽  
Masafumi Yamaguchi
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells

scholarly journals Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(0 0 1) with a pyramid structure consisting of {1 1 1} facets

2017 ◽  
Vol 475 ◽  
pp. 186-191 ◽  
Author(s):  
Tianguo Deng ◽  
Kazuhiro Gotoh ◽  
Ryota Takabe ◽  
Zhihao Xu ◽  
Suguru Yachi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Pyramid Structure

scholarly journals An Analysis of Light Induced Degradation with Optical Source Properties in Boron-Doped P-Type Cz-Si Solar Cells

2014 ◽  
Vol 24 (6) ◽  
pp. 305-309
Author(s):  
Soo Min Kim ◽  
Soohyun Bae ◽  
Young Do Kim ◽  
Sungeun Park ◽  
Yoonmook Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optical Source ◽  
Boron Doped ◽  
Si Solar Cells ◽  
P Type

High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
Shoichi Nakano ◽  
Shinya Tsuda ◽  
Hisaki Tarui ◽  
Tsuyoshi Takahama ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Reaction Chamber ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
New Material ◽  
Si Films ◽  
First Time

ABSTRACTAs a new preparation method for high-quality a-Si films, we have developed the super chamber, a separated UHV reaction chamber system. A low impurity concentration and excellent film properties were obtained by the super chamber. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.As a new material, amorphous superlattice structure films were fabricated by the photo-CVD method for the first time. Quantization effects and low damage to the interfaces were observed. Superlattice structure p-layer a-Si solar cells were fabricated for the first time, and a conversion efficiency of 10.5% was obtained.

The Influence of the Si-H2Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells

1989 ◽  
Vol 28 (Part 1, No. 10) ◽  
pp. 1762-1768 ◽  
Author(s):  
Noboru Nakamura ◽  
Tsuyoshi Takahama ◽  
Masao Isomura ◽  
Masato Nishikuni ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Si Films

Improved diffusion profiles in back-contacted back-junction Si solar cells with an overcompensated boron-doped emitter

2011 ◽  
Vol 208 (12) ◽  
pp. 2871-2883 ◽  
Author(s):  
Christian Reichel ◽  
Martin Bivour ◽  
Filip Granek ◽  
Martin Hermle ◽  
Stefan W. Glunz
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Diffusion Profiles

Superlattice Structure a-Si Films Prepared by Photo-CVD Method and Their Application to a-Si Solar Cells.

1986 ◽  
Author(s):  
H. Tarui ◽  
T. Matsuyama ◽  
S. Tsuda ◽  
Y. Hishikawa ◽  
T. Takahama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
Si Films

scholarly journals Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cells

2018 ◽  
Vol 216 (10) ◽  
pp. 1800603 ◽  
Author(s):  
Audrey Morisset ◽  
Raphaël Cabal ◽  
Bernadette Grange ◽  
Clément Marchat ◽  
José Alvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Poly Silicon ◽  
Boron Doped ◽  
Si Solar Cells
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