Novel Boron-Doped p-Type Cu2O Thin Films as a Hole-Selective Contact in c-Si Solar Cells

2020 ◽  
Vol 12 (11) ◽  
pp. 12972-12981 ◽  
Author(s):  
Kurias K. Markose ◽  
Manu Shaji ◽  
Swasti Bhatia ◽  
Pradeep R. Nair ◽  
Kachirayil J. Saji ◽  
...  
2014 ◽  
Vol 24 (6) ◽  
pp. 305-309
Author(s):  
Soo Min Kim ◽  
Soohyun Bae ◽  
Young Do Kim ◽  
Sungeun Park ◽  
Yoonmook Kang ◽  
...  

Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  

2002 ◽  
Vol 91 (8) ◽  
pp. 4853-4856 ◽  
Author(s):  
Tuong Khanh Vu ◽  
Yoshio Ohshita ◽  
Kenji Araki ◽  
Masafumi Yamaguchi

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).


2020 ◽  
Vol 109 ◽  
pp. 104914
Author(s):  
L. Hill-Pastor ◽  
T. Díaz-Becerril ◽  
R. Romano-Trujillo ◽  
M. Galván-Arellano ◽  
R. Peña-Sierra
Keyword(s):  

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