High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates

1984 ◽  
Vol 44 (11) ◽  
pp. 1092-1094 ◽  
Author(s):  
Tsutomu Matsushita ◽  
Koichiro Komori ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Deposition Rates ◽  
Boron Doped ◽  
Si Solar Cells ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Photovoltage profiling of hydrogenated amorphous Si solar cells

1984 ◽  
Vol 56 (2) ◽  
pp. 522-530 ◽  
Author(s):  
D. J. Szostak ◽  
B. Goldstein
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Generation and annihilation of boron–oxygen related defects in boron-doped Czochralski-grown Si solar cells

2002 ◽  
Vol 91 (8) ◽  
pp. 4853-4856 ◽  
Author(s):  
Tuong Khanh Vu ◽  
Yoshio Ohshita ◽  
Kenji Araki ◽  
Masafumi Yamaguchi
Keyword(s):  
Solar Cells ◽  
Boron Doped ◽  
Si Solar Cells

Photocurrent increase in amorphous Si solar cells by increased reflectivity of LiF/Al electrodes

2012 ◽  
Vol 107 ◽  
pp. 259-262 ◽  
Author(s):  
T. Lanz ◽  
L. Fang ◽  
S.J. Baik ◽  
K.S. Lim ◽  
B. Ruhstaller
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Amorphous Si

IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 57-63 ◽  
Author(s):  
X. DENG ◽  
W. WANG ◽  
S. HAN ◽  
H. POVOLNY ◽  
W. DU ◽  
...  
Keyword(s):  
Solar Cells ◽  
Density Functional ◽  
Nanocrystalline Silicon ◽  
Functional Approach ◽  
Wide Bandgap ◽  
Quantum Size ◽  
Si Solar Cells ◽  
P Type ◽  
The Impact ◽  
Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

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