Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing

2006 ◽  
Vol 100 (10) ◽  
pp. 104502 ◽  
Author(s):  
C. P. Chen ◽  
Y. J. Lee ◽  
Y. C. Chang ◽  
Z. K. Yang ◽  
M. Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characteristics ◽  
High Temperature Annealing

High temperature annealing effects on the electrical characteristics of C implanted Si

1996 ◽  
Vol 79 (7) ◽  
pp. 3464-3469 ◽  
Author(s):  
S. Lombardo ◽  
A. Cacciato ◽  
K. Kyllesbech Larsen ◽  
V. Raineri ◽  
F. La Via ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characteristics ◽  
High Temperature Annealing ◽  
Annealing Effects

scholarly journals Enhanced Tunability of BaTixSn1−xO3 Films on Dielectric Substrate

2021 ◽  
Vol 11 (16) ◽  
pp. 7367
Author(s):  
Andrey Tumarkin ◽  
Evgeny Sapego ◽  
Alexander Gagarin ◽  
Stanislav Senkevich
Keyword(s):  
Crystal Structure ◽  
Phase Composition ◽  
High Temperature ◽  
Dielectric Substrate ◽  
Electrical Characteristics ◽  
High Temperature Annealing ◽  
Ferroelectric Films ◽  
Structure Phase ◽  
Gas Medium ◽  
Microwave Characteristics

The structural properties of ferroelectric films of barium titanate-stannate on alumina substrates and the microwave characteristics of planar capacitive elements based on them are studied. It is established that the composition of the gas medium and the temperature of the substrate during the deposition of the film has a significant effect on the crystal structure, phase composition of the films and their electrical characteristics. Planar capacitors based on films subjected to high-temperature annealing after deposition exhibit 85% tunability at a frequency of 2 GHz, which is the best result for today.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

FERROPERM

Alloy Digest ◽  
1993 ◽  
Vol 42 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Physical Properties ◽  
Saturation Magnetization ◽  
Pure Iron ◽  
Magnetic Alloy ◽  
High Saturation Magnetization ◽  
High Temperature Annealing ◽  
Soft Magnetic ◽  
Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

Preparation of silicon-based nanowires through high-temperature annealing

2018 ◽  
Vol 42 (1) ◽  
pp. 149-158
Author(s):  
SHUANG XI ◽  
SHUANGSHUANG ZUO ◽  
YING LIU ◽  
YINLONG ZHU ◽  
YUTU YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Silicon Based
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