STI edge effect on the series resistance of CMOS Schottky barrier diodes

2014 ◽  
Vol 56 (4) ◽  
pp. 932-935
Author(s):  
Jaelin Lee ◽  
Suna Kim ◽  
Jong-Phil Hong ◽  
Sang-Gug Lee
Keyword(s):  
Schottky Barrier ◽  
Edge Effect ◽  
Series Resistance ◽  
Schottky Barrier Diodes

Erratum: STI edge effect on the series resistance of CMOS Schottky barrier diodes

2014 ◽  
Vol 56 (8) ◽  
pp. 1970-1970
Author(s):  
Jaelin Lee ◽  
Suna Kim ◽  
Jong-Phil Hong ◽  
Sang-Gug Lee
Keyword(s):  
Schottky Barrier ◽  
Edge Effect ◽  
Series Resistance ◽  
Schottky Barrier Diodes

Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

1996 ◽  
Vol 62 (3) ◽  
pp. 269-273 ◽  
Author(s):  
M. Saλam ◽  
E. Ayyildiz ◽  
A. Gümüs ◽  
A. Türüt ◽  
H. Efeoλu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Series Resistance ◽  
Schottky Barrier Diodes ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

AN ASSESSMENT ON ELECTRICAL CHARACTERIZATION OF Ni/n-Si SCHOTTKY RECTIFIERS WITH AND WITHOUT Ta2O5 INTERFACIAL OXIDE LAYER

2019 ◽  
Vol 26 (10) ◽  
pp. 1950073 ◽  
Author(s):  
N. NANDA KUMAR REDDY ◽  
P. ANANDA ◽  
V. K. VERMA ◽  
K. RAHIM BAKASH
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Mis Structure ◽  
Schottky Barrier Diodes ◽  
Mis Structures

We have fabricated Ni/[Formula: see text]-Si metal–semiconductor (MS) and Ni/Ta2O5/[Formula: see text]-Si metal-insulator–semiconductor (MIS) Schottky barrier diodes at room temperature and studied their current density–voltage (J–V) and capacitance–voltage (C–V) characteristic properties. The forward bias J–V characteristics of the fabricated MS and MIS devices have been evaluated with the help of the thermionic emission (TE) mechanism. Schottky barrier height (SBH) values of 0.73 and 0.84[Formula: see text]eV and ideality factor values of 1.75 and 1.46 are extracted using J–V measurements for MS and MIS Schottky barrier diodes without and with Ta2O5 interfacial oxide layer, respectively. It was noted that the incorporation of Ta2O5 interfacial oxide layer enhanced the value of SBH for the MIS device because this oxide layer produced the substantial barrier between Ni and [Formula: see text]-Si and this obtained barrier height value is better than the conventional metal/[Formula: see text]-Si (MS) Schottky diodes. The rectification ratio (RR) calculated at [Formula: see text][Formula: see text]V for the MS structure is found to be [Formula: see text] and the MIS structure is found to be [Formula: see text]. Using Chung’s method, the series resistance ([Formula: see text]) values are calculated using [Formula: see text]/[Formula: see text] vs I plot and are found to be 21,603[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 5489[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In addition, [Formula: see text] vs [Formula: see text] plot has been utilized to evaluate the series resistance ([Formula: see text]) values and are found to be 14,064[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 2236[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In conclusion, by analyzing the experimental results, it is confirmed that the good quality performance is observed in Ni/Ta2O5/[Formula: see text]-Si (MIS) type SBD when compared to Ni/[Formula: see text]-Si (MS) type SBD and can be accredited to the intentionally formed thin Ta2O5 interfacial oxide layer between Nickel and [Formula: see text]-type Si.

Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Schottky Barrier ◽  
Minority Carrier ◽  
Series Resistance ◽  
Amorphous Semiconductors ◽  
Physical Parameters ◽  
Schottky Barrier Diodes ◽  
Carrier Injection ◽  
Current Voltage ◽  
First Time ◽  
Hydrogenated Amorphous

The minority-carrier injection and series resistance effects on the electrical properties of a-Si:H Schottky barrier diodes are described. The conductivity modulation was observed, for the first time, in metal/HOMOCVD a-Si:H contacts. Its effect on capacitance-voltage characteristics are discussed. The minority-carrier injection ratio is estimated from current-voltage characteristics as a function of total forward current for different metals. It is shown that these effects cannot be neglected in the interpretation of the AC and DC measurements. The caution, therefore, must be taken when using a-Si:H diodes structures to obtain the fundamental physical parameters characterizing either the interface or bulk properties of amorphous semiconductors.

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

2018 ◽  
Vol 32 (09) ◽  
pp. 1850097 ◽  
Author(s):  
D. Hamri ◽  
A. Teffahi ◽  
A. Djeghlouf ◽  
D. Chalabi ◽  
A. Saidane
Keyword(s):  
Schottky Barrier ◽  
Low Voltage ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Reverse Current ◽  
Interface States ◽  
Schottky Barrier Diodes ◽  
Shunt Resistance ◽  
Voltage Frequency

Current–voltage (I–V), capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G/[Formula: see text]–V–f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si[Formula: see text]Ge[Formula: see text] (FM1) and Pt/[Formula: see text]-Si[Formula: see text]Ge[Formula: see text](PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height ([Formula: see text]), ideality factor (n) and series resistance (R[Formula: see text]) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole–Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (N[Formula: see text]) indicated a difference in interface reactivity. Distribution profiles of series resistance (R[Formula: see text]) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

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