Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

M. Saλam; E. Ayyildiz; A. Gümüs; A. Türüt; H. Efeoλu; S. Tüzemen

doi:10.1007/bf01575093

Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

Applied Physics A ◽

10.1007/bf01575093 ◽

1996 ◽

Vol 62 (3) ◽

pp. 269-273 ◽

Cited By ~ 56

Author(s):

M. Saλam ◽

E. Ayyildiz ◽

A. Gümüs ◽

A. Türüt ◽

H. Efeoλu ◽

...

Keyword(s):

Schottky Barrier ◽

Series Resistance ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

Applied Physics A ◽

10.1007/s003390050297 ◽

1996 ◽

Vol 62 (3) ◽

pp. 269-273 ◽

Cited By ~ 3

Author(s):

M. Sağlam ◽

E. Ayyıldız ◽

A. Gümüş ◽

A. Türüt ◽

H. Efeoğlu ◽

...

Keyword(s):

Schottky Barrier ◽

Series Resistance ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

Physica Scripta ◽

10.1088/0031-8949/90/9/095801 ◽

2015 ◽

Vol 90 (9) ◽

pp. 095801 ◽

Cited By ~ 25

Author(s):

E E Tanrıkulu ◽

D E Yıldız ◽

A Günen ◽

Ş Altındal

Keyword(s):

Dielectric Properties ◽

Schottky Barrier ◽

Voltage Dependence ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Frequency And Voltage Dependence ◽

Semiconductor Type

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Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes

Journal of Inorganic and Organometallic Polymers and Materials ◽

10.1007/s10904-019-01285-y ◽

2019 ◽

Vol 30 (3) ◽

pp. 731-748 ◽

Cited By ~ 8

Author(s):

R. Marnadu ◽

J. Chandrasekaran ◽

S. Maruthamuthu ◽

P. Vivek ◽

V. Balasubramani ◽

...

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Jet Nebulizer

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Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Journal of Applied Physics ◽

10.1063/1.4893970 ◽

2014 ◽

Vol 116 (8) ◽

pp. 083709 ◽

Cited By ~ 41

Author(s):

S. Alialy ◽

Ş. Altındal ◽

E. E. Tanrıkulu ◽

D. E. Yıldız

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Temperature Dependent ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Conduction Mechanisms ◽

Current Conduction ◽

Semiconductor Type

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Effect of Organic Additives on the Characteristics of Al/Organic Additive:ZrO2/p-Si Metal–Insulator-Semiconductor (MIS) Type Schottky Barrier Diodes

Journal of Inorganic and Organometallic Polymers and Materials ◽

10.1007/s10904-019-01216-x ◽

2019 ◽

Vol 30 (2) ◽

pp. 564-572 ◽

Cited By ~ 3

Author(s):

K. Sasikumar ◽

R. Bharathikannan ◽

J. Chandrasekaran ◽

M. Raja

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Organic Additives ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

Physica B Condensed Matter ◽

10.1016/j.physb.2006.08.011 ◽

2007 ◽

Vol 390 (1-2) ◽

pp. 179-184 ◽

Cited By ~ 43

Author(s):

Subhash Chand ◽

Saroj Bala

Keyword(s):

Schottky Barrier ◽

Current Transport ◽

Simulation Studies ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Superior photoresponse MIS Schottky barrier diodes with nanoporous:Sn–WO3 films for ultraviolet photodetector application

New Journal of Chemistry ◽

10.1039/d0nj00101e ◽

2020 ◽

Vol 44 (19) ◽

pp. 7708-7718 ◽

Cited By ~ 6

Author(s):

Marnadu Raj ◽

Chandrasekaran Joseph ◽

Maruthamuthu Subramanian ◽

Vivek Perumalsamy ◽

Vijayakumar Elayappan

Keyword(s):

Schottky Barrier ◽

Quantum Efficiency ◽

Schottky Diodes ◽

Schottky Barrier Diodes ◽

Ultraviolet Photodetector ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Responsivity ◽

Semiconductor Type

Nanoporous:Sn–WO3 film based metal–insulator–semiconductor type Schottky diodes exhibit ultra-high responsivity with higher quantum efficiency and detectivity.

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Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106424 ◽

2020 ◽

Vol 139 ◽

pp. 106424 ◽

Cited By ~ 3

Author(s):

K. Sasikumar ◽

R. Bharathikannan ◽

M. Raja ◽

B. Mohanbabu

Keyword(s):

Rare Earth ◽

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization

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Video detection and mixing performance of GaAs Schottky‐barrier diodes at 30 THz and comparison with metal‐insulator‐metal diodes

Journal of Applied Physics ◽

10.1063/1.355980 ◽

1994 ◽

Vol 75 (8) ◽

pp. 4243-4248 ◽

Cited By ~ 37

Author(s):

H.‐W. Hübers ◽

G. W. Schwaab ◽

H. P. Röser

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Metal Insulator ◽

Mixing Performance ◽

Metal Insulator Metal ◽

Video Detection

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Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

Applied Physics A ◽

10.1007/s00339-013-7552-3 ◽

2013 ◽

Vol 113 (2) ◽

pp. 491-499 ◽

Cited By ~ 21

Author(s):

Mamta Sharma ◽

S. K. Tripathi

Keyword(s):

Series Resistance ◽

Interface States ◽

Semiconductor Diode ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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