The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

2013 ◽  
Vol 13 (7) ◽  
pp. 1225-1230 ◽  
Author(s):  
S. Zeyrek ◽  
E. Acaroğlu ◽  
Ş. Altındal ◽  
S. Birdoğan ◽  
M.M. Bülbül
Keyword(s):  
Schottky Barrier ◽  
Series Resistance ◽  
Interface States ◽  
Schottky Barrier Diodes ◽  
Frequency Dependent

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

2018 ◽  
Vol 32 (09) ◽  
pp. 1850097 ◽  
Author(s):  
D. Hamri ◽  
A. Teffahi ◽  
A. Djeghlouf ◽  
D. Chalabi ◽  
A. Saidane
Keyword(s):  
Schottky Barrier ◽  
Low Voltage ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Reverse Current ◽  
Interface States ◽  
Schottky Barrier Diodes ◽  
Shunt Resistance ◽  
Voltage Frequency

Current–voltage (I–V), capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G/[Formula: see text]–V–f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si[Formula: see text]Ge[Formula: see text] (FM1) and Pt/[Formula: see text]-Si[Formula: see text]Ge[Formula: see text](PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height ([Formula: see text]), ideality factor (n) and series resistance (R[Formula: see text]) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole–Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (N[Formula: see text]) indicated a difference in interface reactivity. Distribution profiles of series resistance (R[Formula: see text]) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum ◽  
2000 ◽  
Vol 57 (2) ◽  
pp. 219-228 ◽  
Author(s):  
B. Akkal ◽  
Z. Benamara ◽  
B. Gruzza ◽  
L. Bideux
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Schottky Barrier Diodes

Erratum: STI edge effect on the series resistance of CMOS Schottky barrier diodes

2014 ◽  
Vol 56 (8) ◽  
pp. 1970-1970
Author(s):  
Jaelin Lee ◽  
Suna Kim ◽  
Jong-Phil Hong ◽  
Sang-Gug Lee
Keyword(s):  
Schottky Barrier ◽  
Edge Effect ◽  
Series Resistance ◽  
Schottky Barrier Diodes

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

2007 ◽  
Vol 400 (1-2) ◽  
pp. 149-154 ◽  
Author(s):  
A. Birkan Selçuk ◽  
N. Tuğluoğlu ◽  
S. Karadeniz ◽  
S. Bilge Ocak
Keyword(s):  
Series Resistance ◽  
Interface States ◽  
Frequency Dependent ◽  
Dependent Series ◽  
Mis Structures

Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

1996 ◽  
Vol 62 (3) ◽  
pp. 269-273 ◽  
Author(s):  
M. Saλam ◽  
E. Ayyildiz ◽  
A. Gümüs ◽  
A. Türüt ◽  
H. Efeoλu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Series Resistance ◽  
Schottky Barrier Diodes ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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