Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs

Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R. S. Gupta

doi:10.1002/mop.25022

Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs

Microwave and Optical Technology Letters ◽

10.1002/mop.25022 ◽

2010 ◽

Vol 52 (3) ◽

pp. 746-750

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

Subhasis Haldar ◽

R. S. Gupta

Keyword(s):

Device Performance ◽

Asymmetric Channel ◽

Gate Stack ◽

Surrounding Gate

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Impact of laterally asymmetric channel and gate stack design on device performance of surrounding gate MOSFETs : A modeling and simulation study

2008 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2008.4958641 ◽

2008 ◽

Cited By ~ 1

Author(s):

H. Kaur ◽

S. Kabra ◽

S. Haldar ◽

R.S. Gupta

Keyword(s):

Modeling And Simulation ◽

Simulation Study ◽

Device Performance ◽

Asymmetric Channel ◽

Gate Stack ◽

Surrounding Gate ◽

Stack Design

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Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFET (LACGAS SGT): A simulation study

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422276 ◽

2007 ◽

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

Subhasis Haldar ◽

R. S. Gupta

Keyword(s):

Simulation Study ◽

Device Performance ◽

Asymmetric Channel ◽

Gate Stack ◽

Surrounding Gate

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Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET

Physica Scripta ◽

10.1088/1402-4896/ac33fd ◽

2021 ◽

Vol 96 (12) ◽

pp. 124055

Author(s):

Sumedha Gupta ◽

Neeta Pandey ◽

R S Gupta

Keyword(s):

Temperature Dependency ◽

Metal Gate ◽

Gate Stack ◽

Accumulation Mode ◽

Surrounding Gate ◽

Dual Metal

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Asymmetric Multilayered Gate Dielectric (AMGAD) surrounding gate MOSFET: A new structural concept for enhanced device performance

2008 International Conference on Recent Advances in Microwave Theory and Applications ◽

10.1109/amta.2008.4763075 ◽

2008 ◽

Author(s):

H. Kaur ◽

S. Kabra ◽

S. Haldar ◽

R.S. Gupta

Keyword(s):

Gate Dielectric ◽

Device Performance ◽

Surrounding Gate ◽

Structural Concept

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The Effect of Gate Stack and High-ĸ Spacer on Device Performance of a Junctionless GAA FinFET

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) ◽

10.1109/vlsidcs47293.2020.9179855 ◽

2020 ◽

Cited By ~ 1

Author(s):

Bhavya Kumar ◽

Ajay Kumar ◽

Rishu Chaujar

Keyword(s):

Device Performance ◽

Gate Stack ◽

High Q

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Subthreshold Performance of In1– xGax As Based Dual Metal with Gate Stack Cylindrical/Surrounding Gate Nanowire MOSFET for Low Power Analog Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2017.1961 ◽

2017 ◽

Vol 12 (2) ◽

pp. 171-176 ◽

Cited By ~ 11

Author(s):

Sanjeev Kumar Sharma ◽

Balwinder Raj ◽

Mamta Khosla

Keyword(s):

Low Power ◽

Gate Stack ◽

Surrounding Gate ◽

Dual Metal ◽

Nanowire Mosfet

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Asymmetric Gate Stack Surrounding gate Transistor (ASYMGAS SGT): 2-D Analytical Threshold Voltage Model

2007 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2007.4554710 ◽

2007 ◽

Cited By ~ 2

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

R.S. Gupta ◽

Subhasis Haldar

Keyword(s):

Threshold Voltage ◽

Gate Stack ◽

Surrounding Gate ◽

Threshold Voltage Model

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An analytic drain current model for long-channel undoped gate stack surrounding-gate MOSFETs including interface fixed charges

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.1900 ◽

2013 ◽

Vol 27 (1) ◽

pp. 99-108

Author(s):

Danghui Wang ◽

Man Zhang ◽

Ru Han ◽

Yuhao Lu ◽

Lu He

Keyword(s):

Current Model ◽

Drain Current ◽

Gate Stack ◽

Fixed Charges ◽

Surrounding Gate ◽

Long Channel

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Impact of interface layer and metal workfunction on device performance of ferroelectric junctionless cylindrical surrounding gate transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.06.032 ◽

2017 ◽

Vol 111 ◽

pp. 194-205 ◽

Cited By ~ 1

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Interface Layer ◽

Device Performance ◽

Surrounding Gate

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Analog Performance of Dual- Metal Gate Stack Architecture of Junctionless Accumulation-Mode Cylindrical Surrounding Gate (DMGSA-JAM-CSG) MOSFET

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455896 ◽

2021 ◽

Author(s):

Sumedha Gupta ◽

Neeta Pandey ◽

R. S. Gupta

Keyword(s):

Metal Gate ◽

Gate Stack ◽

Accumulation Mode ◽

Analog Performance ◽

Surrounding Gate ◽

Dual Metal

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