An analytic drain current model for long-channel undoped gate stack surrounding-gate MOSFETs including interface fixed charges

2013 ◽  
Vol 27 (1) ◽  
pp. 99-108
Author(s):  
Danghui Wang ◽  
Man Zhang ◽  
Ru Han ◽  
Yuhao Lu ◽  
Lu He
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Gate Stack ◽  
Fixed Charges ◽  
Surrounding Gate ◽  
Long Channel

scholarly journals Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs

2021 ◽  
Vol 15 ◽  
pp. 1394-1399
Author(s):  
Billel Smaani ◽  
Samir Labiod ◽  
Fares Nafa ◽  
Mohamed Salah Benlatreche ◽  
Saida Latreche
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Poisson's Equation ◽  
Accumulation Mode ◽  
Surrounding Gate ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Long Channel ◽  
Partial Depletion

In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model

Analytical unified drain current model of long-channel tri-gate FinFETs

2012 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. Fasarakis ◽  
D. H. Tassis ◽  
I. Pappas ◽  
K. Papathanasiou ◽  
...  
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Long Channel

Analytical Drain Current Model for Fully Depleted Surrounding Gate TFET

2018 ◽  
Vol 55 ◽  
pp. 75-81 ◽  
Author(s):  
C. Usha ◽  
Palanichamy Vimala
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Fully Depleted ◽  
Metal Work Function ◽  
Surrounding Gate ◽  
Effect Transistor ◽  
Tcad Simulation ◽  
Silicon Thickness ◽  
Metal Work

In this paper, we propose the analytical modeling for fully depleted surrounding gate TFET surrounding gate tunneling field effect transistor with single metal gate. This model comprises the surface potential using 2-D Poisson’s equation and drain current with the effects of oxide thickness, silicon thickness as radius, drain voltage, gate metal work function, and assuming channel is fully depleted. The model is tested using TCAD Simulation Tool.

A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs

2015 ◽  
Vol 12 (9) ◽  
pp. 2515-2522 ◽  
Author(s):  
Pradipta Dutta ◽  
Binit Syamal ◽  
Kalyan Koley ◽  
N. Mohankumar ◽  
C. K. Sarkar
Keyword(s):  
Threshold Voltage ◽  
Current Model ◽  
Drain Current ◽  
Surrounding Gate ◽  
Heavily Doped

Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

2012 ◽  
Vol 59 (12) ◽  
pp. 3292-3298 ◽  
Author(s):  
Zhuojun Chen ◽  
Yongguang Xiao ◽  
Minghua Tang ◽  
Ying Xiong ◽  
Jianqiang Huang ◽  
...  
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Double Gate ◽  
Long Channel

Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs

2011 ◽  
Vol 110 (3) ◽  
pp. 034510 ◽  
Author(s):  
M. Cheralathan ◽  
G. Iannaccone ◽  
E. Sangiorgi ◽  
B. Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Transport Models ◽  
Surrounding Gate
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