Impact of laterally asymmetric channel and gate stack design on device performance of surrounding gate MOSFETs : A modeling and simulation study

2008 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2008.4958641 ◽

2008 ◽

Cited By ~ 1

Author(s):

H. Kaur ◽

S. Kabra ◽

S. Haldar ◽

R.S. Gupta

Keyword(s):

Modeling And Simulation ◽

Simulation Study ◽

Device Performance ◽

Asymmetric Channel ◽

Gate Stack ◽

Surrounding Gate ◽

Stack Design

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Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFET (LACGAS SGT): A simulation study

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422276 ◽

2007 ◽

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

Subhasis Haldar ◽

R. S. Gupta

Keyword(s):

Simulation Study ◽

Device Performance ◽

Asymmetric Channel ◽

Gate Stack ◽

Surrounding Gate

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Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs

Microwave and Optical Technology Letters ◽

10.1002/mop.25022 ◽

2010 ◽

Vol 52 (3) ◽

pp. 746-750

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

Subhasis Haldar ◽

R. S. Gupta

Keyword(s):

Device Performance ◽

Asymmetric Channel ◽

Gate Stack ◽

Surrounding Gate

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Simulation study of channel mobility and device performance dependence on gate stack in graphene field-effect transistors

Applied Physics Letters ◽

10.1063/1.3693410 ◽

2012 ◽

Vol 100 (11) ◽

pp. 112104 ◽

Cited By ~ 8

Author(s):

Weinan Zhu ◽

Jinyu Zhang ◽

Zhiping Yu

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Device Performance ◽

Gate Stack ◽

Channel Mobility

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Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2616035 ◽

2016 ◽

Vol 63 (12) ◽

pp. 4678-4684 ◽

Cited By ~ 38

Author(s):

Ali Saeidi ◽

Farzan Jazaeri ◽

Igor Stolichnov ◽

Adrian M. Ionescu

Keyword(s):

Simulation Study ◽

Thin Body ◽

Device Performance ◽

Negative Capacitance ◽

Double Gate ◽

Gate Stack ◽

Calibrated Simulation

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Modeling and Simulation of Novel Ferroelectric Gate Stack in MOSFET for Enhanced Device Performance

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2018.8605823 ◽

2018 ◽

Author(s):

Prianka Sengupta ◽

Ruyan Guo ◽

Amar Bhalla

Keyword(s):

Modeling And Simulation ◽

Device Performance ◽

Gate Stack

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Current Ceftriaxone Dose Recommendations are Adequate for Most Critically Ill Children: Results of a Population Pharmacokinetic Modeling and Simulation Study

Clinical Pharmacokinetics ◽

10.1007/s40262-021-01035-9 ◽

2021 ◽

Author(s):

Stan J. F. Hartman ◽

Parth J. Upadhyay ◽

Nienke N. Hagedoorn ◽

Ron A. A. Mathôt ◽

Henriëtte A. Moll ◽

...

Keyword(s):

Modeling And Simulation ◽

Critically Ill ◽

Simulation Study ◽

Pharmacokinetic Modeling ◽

Critically Ill Children ◽

Population Pharmacokinetic ◽

Population Pharmacokinetic Modeling ◽

Dose Recommendations ◽

Pharmacokinetic Modeling And Simulation

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Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator

Journal of the Korean Physical Society ◽

10.3938/jkps.74.1171 ◽

2019 ◽

Vol 74 (12) ◽

pp. 1171-1175

Author(s):

Sangwook Jo ◽

Geonwook Yoo ◽

Junseok Heo

Keyword(s):

Modeling And Simulation ◽

Simulation Study ◽

Gate Insulator ◽

Self Heating ◽

Bottom Gate

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Kinetic modeling and simulation study for a sequential electrochemical extractive crude diesel desulfurization

Separation and Purification Technology ◽

10.1016/j.seppur.2021.119587 ◽

2021 ◽

pp. 119587

Author(s):

Yadollah Tavan ◽

Fatola Farhadi ◽

Mohammad Shahrokhi

Keyword(s):

Modeling And Simulation ◽

Kinetic Modeling ◽

Simulation Study

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Simulation study on a new dual-material nanowire MOS surrounding-gate transistor

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424621 ◽

2010 ◽

Author(s):

Wang Zhou ◽

Lining Zhang ◽

Yiwen Xu ◽

Lin Chen ◽

F. He

Keyword(s):

Simulation Study ◽

Surrounding Gate ◽

Dual Material

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Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET

Physica Scripta ◽

10.1088/1402-4896/ac33fd ◽

2021 ◽

Vol 96 (12) ◽

pp. 124055

Author(s):

Sumedha Gupta ◽

Neeta Pandey ◽

R S Gupta

Keyword(s):

Temperature Dependency ◽

Metal Gate ◽

Gate Stack ◽

Accumulation Mode ◽

Surrounding Gate ◽

Dual Metal

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