Phonon confinement effects in the Raman spectrum of nanodiamond

2009 ◽  
Vol 80 (7) ◽  
Author(s):  
S. Osswald ◽  
V. N. Mochalin ◽  
M. Havel ◽  
G. Yushin ◽  
Y. Gogotsi
Keyword(s):  
Raman Spectrum ◽  
Phonon Confinement ◽  
Confinement Effects

Raman spectrum of Si nanowires: temperature and phonon confinement effects

2013 ◽  
Vol 114 (4) ◽  
pp. 1321-1331 ◽  
Author(s):  
J. Anaya ◽  
A. Torres ◽  
V. Hortelano ◽  
J. Jiménez ◽  
A. C. Prieto ◽  
...  
Keyword(s):  
Raman Spectrum ◽  
Si Nanowires ◽  
Phonon Confinement ◽  
Confinement Effects

Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction

2009 ◽  
Vol 80 (2) ◽  
Author(s):  
B. Krenzer ◽  
A. Hanisch-Blicharski ◽  
P. Schneider ◽  
Th. Payer ◽  
S. Möllenbeck ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Phonon Confinement ◽  
Confinement Effects ◽  
Time Resolved ◽  
Bismuth Films

Size and phonon-confinement effects on low-frequency Raman mode of anatase TiO2 nanocrystal

2005 ◽  
Vol 340 (1-4) ◽  
pp. 220-227 ◽  
Author(s):  
Ke-Rong Zhu ◽  
Ming-Sheng Zhang ◽  
Qiang Chen ◽  
Zhen Yin
Keyword(s):  
Low Frequency ◽  
Anatase Tio2 ◽  
Raman Mode ◽  
Phonon Confinement ◽  
Confinement Effects

Magnetopolaron in a Quantum Well. LO-Phonon Confinement Effects

1990 ◽  
Vol 160 (1) ◽  
pp. 117-125 ◽  
Author(s):  
H. Rücker ◽  
M. Mora-Ramos ◽  
F. Comas
Keyword(s):  
Quantum Well ◽  
Phonon Confinement ◽  
Confinement Effects

Phonon confinement effects in Raman spectra of porous silicon at non-resonant excitation condition

2014 ◽  
Vol 45 (6) ◽  
pp. 470-475 ◽  
Author(s):  
Marin Kosović ◽  
Ozren Gamulin ◽  
Maja Balarin ◽  
Mile Ivanda ◽  
Vedran Đerek ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Resonant Excitation ◽  
Excitation Condition ◽  
Phonon Confinement ◽  
Confinement Effects

Raman Spectroscopy of Group IV Nanostructured Semiconductors: Influence of Size and Temperature

2008 ◽  
Vol 1145 ◽  
Author(s):  
Alfredo Torres ◽  
Oscar Martínez ◽  
Carmelo Prieto ◽  
Juan Jimenez ◽  
Andrés Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Heat Dissipation ◽  
Group Iv ◽  
Si Nanowires ◽  
Phonon Confinement ◽  
Experimental Conditions ◽  
Potential Applications ◽  
As Stress ◽  
Non Destructive

AbstractGroup IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

Embedded Silicon Nanocrystals Studied by Photoluminescence and Raman Spectroscopies: Exciton and Phonon Confinement Effects

2010 ◽  
Vol 114 (41) ◽  
pp. 17344-17349 ◽  
Author(s):  
Patrice Miska ◽  
Manuel Dossot ◽  
Thi D. Nguyen ◽  
Matthias Grün ◽  
Hervé Rinnert ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Phonon Confinement ◽  
Confinement Effects
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