Micro-Raman depth profiling on polished cross-sections: the mapping of oxalates used in protective treatment of carbonatic substrate

2008 ◽  
Vol 39 (10) ◽  
pp. 1307-1308 ◽  
Author(s):  
C. Conti ◽  
G. Fustella ◽  
C. Colombo ◽  
M. Realini ◽  
G. Zerbi
Keyword(s):  
Cross Sections ◽  
Depth Profiling ◽  
Protective Treatment

A study of the interaction of silver with amorphous chalcogenide films in the Scanning Electron Microscope

1990 ◽  
Vol 48 (4) ◽  
pp. 694-695
Author(s):  
A.G. Fitzgerald ◽  
S.M. Potrous
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray ◽  
Chalcogenide Films ◽  
Transmission Electron ◽  
Amorphous Chalcogenides ◽  
Scanning Electron

The diffusion of silver in amorphous chalcogenides is the basis for high-resolution lithographic applications. Previous studies of the diffusion of silver on contact with chalcogenide films has been studied by Auger depth profiling and the effects of photodoping on chemical bonding have been studied by x-ray photoelectron spectroscopy. Electron lithographic effects have been studied in the transmission electron microscope.The objective of the investigation described here has been to determine the degree of diffusion of silver in the amorphous chalcogenides, As2S3, As2Se3, GeS and GeSe when these films are in contact with thin silver films. The silver distribution has been determined by x-ray microanalysis of film cross-sections in the scanning electron microscope (SEM). Electron beam induced conductivity (EBIC) at points in these films has also been investigated.

Depth Profiling of Hydrogen in Ion-Implanted Polymers

1983 ◽  
Vol 27 ◽  
Author(s):  
J. David Carlson ◽  
Peter P. Pronko ◽  
David C. Ingram
Keyword(s):  
Cross Sections ◽  
Polyvinylidene Fluoride ◽  
Depth Profiling ◽  
Polymeric Materials ◽  
Reaction Cross ◽  
High Mass ◽  
Hydrogen Distribution ◽  
Nickel Ions ◽  
Proton Recoil ◽  
Ion Implanted

ABSTRACTDepth profiling of hydrogen in polymeric materials poses special problems. Backscattering methods are ruled out because of kinematics. Nuclear reaction methods are undesirable because small reaction cross sections necessitate large fluences of high mass projectiles and result in unacceptable levels of radiation damage. We have used a helium-induced proton-recoil technique with 3 MeV 4He particles to measure the hydrogen distribution in pristine and ion-implanted polyvinylidene fluoride (PVDF) films. The incident 4He particles stopped in the 25 micron PVDF films while the recoiling protons were detected after passing through the polymer film. Large changes in the hydrogen content of PVDF films implanted with modest fluences of 6 MeV carbon, oxygen and nickel ions were observed.

CVD and Characterization of Al-Cu Metallization Thin Films

1992 ◽  
Vol 260 ◽  
Author(s):  
V. H. Houlding ◽  
H. Maxwell ◽  
S. M. Crochiere ◽  
D. L. Farrington ◽  
R. S. Rai ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Dark Field ◽  
Adhesion Properties ◽  
Cu Films ◽  
Cu Content ◽  
Cu Metallization ◽  
Trimethylamine Alane

ABSTRACTThe chemical vapor deposition of Al-Cu thin films on Si, SiO2, and TiN substrates was examined in a vertical low pressure cold wall reactor using trimethylamine alane (TMAA1) at 20 C as the Al source. The Cu sources bis-(hexafluoroacetylacetonato)copper(H)(CuHFA), (cyclopentadienyl)copper(I) triethylphosphine (CpCuPEt3), and (hexafluoroacetylacetonato)copper(I) trimethylphosphine (HfaCuPMe3), were compared. The Cu content of the films was controlled up to“5 wt% by simply varying the temperature of the Cu source. Codeposited Al-Cu films with excellent conductivity, purity, and adhesion properties were obtained with all Cu sources. Optimal film smoothness was achieved at∼350 C. The compounds differed in the ease of control over the %Cu in the films. CuHFA exhibited a massive parasitic reaction which made control very difficult. The Cu(I) complexes showed very minor parasitic reactions. Analysis of films with high Cu content by SEM-EDS showed clear segregation of Cu and Al, consistent with the low solubility of Cu in Al. Films with >2% Cu appeared homogeneous on a μm scale by both SEM-EDS and SIMS depth profiling. TEM of film cross sections revealed a polycrystalline Al film with small (20–100 Å) Cu-rich particles dispersed throughout the Al grains. These particles exhibited bright field-dark field contrast characteristic of crystalline material.

Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures

1988 ◽  
Vol 128 ◽  
Author(s):  
R. Germann ◽  
A. Forchel ◽  
G. Hörcher ◽  
G. Weimann
Keyword(s):  
Quantum Well ◽  
Cross Sections ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Etching Technique ◽  
Quantum Well Structures ◽  
Inclination Angles ◽  
Argon Ions

ABSTRACTWe have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of 0.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.

Vanishing TiN ARC Coating as an Indicator of EOS in Aluminum Top Metal Lines

2006 ◽  
Author(s):  
Thomas J. Barbieri ◽  
James Wang ◽  
Mike Kottke ◽  
David Theodore ◽  
Richard Wetz
Keyword(s):  
Cross Sections ◽  
Stress Test ◽  
Depth Profiling ◽  
Corrosion Damage ◽  
Optical Microscope ◽  
Analysis Tool ◽  
Metal Line ◽  
Electrical Failure ◽  
Passivation Film ◽  
Aluminum Metal

Abstract Multiple parts failed during a 96 hour HAST (highly accelerated stress test) run. Electrical failure occurred on several pins stressed at 48V during the run. Visual inspection identified possible corrosion damage occurring on a top layer aluminum metal line linked to the failed pins. Additionally, significant lengths of this line and metallization at six other sites appeared white and reflective when viewed through an optical microscope. The device technology utilized a TiN ARC. Aluminum metal with a TiN ARC has a dull, amber color when viewed through an optical light microscope, as opposed to bare aluminum, which appears white and shiny. The initial assumption was that the passivation had lifted off during mold compound removal, along with the top TiN ARC layer at these seven locations. SEM inspection found that final passivation film was still intact over these shiny Al lines, but it was cracked extensively. Neighboring Al lines did not show cracked passivation. A hypothesis was generated that suggested that the TiN ARC was not removed, but rather was altered in some way so as to change its optical appearance. The change in the TiN was believed to be due to a combination of factors that resulted from electrical overstressing of the lines during HAST. A series of experiments utilizing FIB cross-sections, Auger mapping, Auger depth profiling, TEM inspection and EDS were used to show that the TiN ARC layer was still present on the affected lines but had been oxidized. The conclusions drawn from this investigation can be used to rapidly determine the root cause of failure through signature analysis. Shiny Al metal lines are easy to see with optical microscopes and are therefore a useful failure analysis tool to identify electrically and mechanically overstressed lines and circuits.

Absolute Calibration of Sims Depth Profiles of a-SiNx:H/a-Si:H and a-SiOx:H/a-Si:H Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
Jianwei Li ◽  
Jan M. Chabala ◽  
Riccardo Levi-Setti
Keyword(s):  
Cross Sections ◽  
Secondary Ion Mass Spectrometry ◽  
High Spatial Resolution ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Absolute Calibration ◽  
Ion Microprobe ◽  
Depth Profiles ◽  
Atomic Mixing ◽  
Secondary Ion

ABSTRACTWe calibrated secondary ion mass spectrometry (SIMS) depth profiles of a-SiNx:H/a-Si:H and a-SiOx:H/a-Si:H multilayer samples by comparing them to high-spatial-resolution SIMS maps of cross sections through the layers. Both profiles and images were acquired with a focused scanning 45 keV Ga+ ion microprobe. During depth profiling an area gating technique was used to improve depth resolution. At the beginning of the profile the resolution was 8 nm. By cutting the multilayer films at a small angle through the layers, we obtained SIMS images of cross sections through thesemultilayer samples. The resolution along the expanded direction is about 10 nm. By comparing the depth profiles and the cross section images, we determined the ionbeam-induced atomic mixing in the samples, as a function of depth and the sputtering yield for each layer.

Deep Level Defect Characterization of MBE Grown Ingaas/Gaas Heterostructures.

1990 ◽  
Vol 209 ◽  
Author(s):  
W.R. Buchwald ◽  
J.H. Zhao ◽  
F.C. Rong
Keyword(s):  
Conduction Band ◽  
Cross Sections ◽  
Deep Level ◽  
Schottky Diodes ◽  
Energy Levels ◽  
Depth Profiling ◽  
Defect Characterization ◽  
Deep Level Defect ◽  
Transient Spectroscopy

ABSTRACTDeep level transient spectroscopy (DLTS) measurements have been performed on Schottky diodes fabricated on MBE grown InGaAs/GaAs heterostructures. The dominant electron trap in this material is found at a depth of 0.30eV below the GaAs conduction band and is believed to be the previously observed M3 defect. Two other defects, at depths of 0.50eV and 0.58eV below the GaAs conduction band, were also observed. Defect depth profiling shows the 0.50eV defect to be spatially locatednear the heterointerface. The 0.58eV defect is not observed near the heterointerface but is observed in large concentrations deep in the GaAs epilayer. Optical DLTS measurements reveal deep defects at 0.54eV and 0.31eV above the InGaAs valence band as well as a large, broad peak, most likely consisting of several energy levels with varying capture cross sections,located at the heterointerface. Two carrier accumulation peaks were also seen in the CV carrier profiling measurements and are suggested to be due to two heterointerface defects located at 0.68eV and 0.87eV below the GaAs conduction band.Thermally stimulated capacitance measurements also indicate minority hole emission in this n-InGaAs/N-GaAs heterostructure.

Analysis of STEM micrographs of thick objects

1978 ◽  
Vol 36 (2) ◽  
pp. 106-107
Author(s):  
S. Golladay
Keyword(s):  
Inelastic Scattering ◽  
Multiple Scattering ◽  
Mass Distribution ◽  
Cross Sections ◽  
Phase Contrast ◽  
Image Point ◽  
Contrast Effects ◽  
Total Cross Sections ◽  
Elastic And Inelastic Scattering

The theory of multiple scattering has been worked out by Groves and comparisons have been made between predicted and observed signals for thick specimens observed in a STEM under conditions where phase contrast effects are unimportant. Independent measurements of the collection efficiencies of the two STEM detectors, calculations of the ratio σe/σi = R, where σe, σi are the total cross sections for elastic and inelastic scattering respectively, and a model of the unknown mass distribution are needed for these comparisons. In this paper an extension of this work will be described which allows the determination of the required efficiencies, R, and the unknown mass distribution from the data without additional measurements or models. Essential to the analysis is the fact that in a STEM two or more signal measurements can be made simultaneously at each image point.

Direct Observation of Heat Exchanger Deposits by Cross Sectioning

1967 ◽  
Vol 25 ◽  
pp. 364-365
Author(s):  
R. W. Anderson ◽  
D. L. Senecal
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heat Exchanger ◽  
Direct Observation ◽  
Cross Sections ◽  
Preparation Method ◽  
Specimen Preparation ◽  
Flowing Water ◽  
Transmission Electron ◽  
Deposit Layer

A problem was presented to observe the packing densities of deposits of sub-micron corrosion product particles. The deposits were 5-100 mils thick and had formed on the inside surfaces of 3/8 inch diameter Zircaloy-2 heat exchanger tubes. The particles were iron oxides deposited from flowing water and consequently were only weakly bonded. Particular care was required during handling to preserve the original formations of the deposits. The specimen preparation method described below allowed direct observation of cross sections of the deposit layers by transmission electron microscopy.The specimens were short sections of the tubes (about 3 inches long) that were carefully cut from the systems. The insides of the tube sections were first coated with a thin layer of a fluid epoxy resin by dipping. This coating served to impregnate the deposit layer as well as to protect the layer if subsequent handling were required.

An Analysis of Dissociation of Molecules in a High Resolution Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 486-487
Author(s):  
Mihir Parikh
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Sections ◽  
Resolving Power ◽  
Peak Intensity ◽  
Molecular Film ◽  
Resolution Electron ◽  
Dissociation Cross Section ◽  
High Resolution Electron Microscope ◽  
The Stability

It is well known that the resolution of bio-molecules in a high resolution electron microscope depends not just on the physical resolving power of the instrument, but also on the stability of these molecules under the electron beam. Experimentally, the damage to the bio-molecules is commo ly monitored by the decrease in the intensity of the diffraction pattern, or more quantitatively by the decrease in the peaks of an energy loss spectrum. In the latter case the exposure, EC, to decrease the peak intensity from IO to I’O can be related to the molecular dissociation cross-section, σD, by EC = ℓn(IO /I’O) /ℓD. Qu ntitative data on damage cross-sections are just being reported, However, the microscopist needs to know the explicit dependence of damage on: (1) the molecular properties, (2) the density and characteristics of the molecular film and that of the support film, if any, (3) the temperature of the molecular film and (4) certain characteristics of the electron microscope used

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