Overcoming bit loss mechanism in self‐amplified multilevel silicon‐oxide‐nitride‐oxide‐silicon memory cell

2021 ◽  
Author(s):  
Pooja Bohara ◽  
Santosh Kumar Vishvakarma
Keyword(s):  
Silicon Oxide ◽  
Memory Cell ◽  
Loss Mechanism ◽  
Nitride Oxide

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

2001 ◽  
Vol 89 (5) ◽  
pp. 2791-2800 ◽  
Author(s):  
H. Bachhofer ◽  
H. Reisinger ◽  
E. Bertagnolli ◽  
H. von Philipsborn
Keyword(s):  
Silicon Oxide ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Transient Conduction ◽  
Nitride Oxide

Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gate

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1771-1775 ◽  
Author(s):  
Yong Kyu Lee ◽  
Suk Kang Sung ◽  
Jae Sung Sim ◽  
Ki Whan Song ◽  
Jong Duk Lee ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Nitride Oxide

Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Memory Device with Different Tunneling Oxide Thicknesses

2011 ◽  
Vol 11 (7) ◽  
pp. 6109-6113
Author(s):  
Hyun Joo Kim ◽  
Joo Hyung You ◽  
Sung Ho Kim ◽  
Kae Dal Kwack ◽  
Tae Whan Kim
Keyword(s):  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Oxide
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