Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization

2005 ◽  
Vol 23 (5) ◽  
pp. 2184 ◽  
Author(s):  
S. Gu ◽  
S. V. Dunton ◽  
A. J. Walker ◽  
S. Nallamothu ◽  
E. H. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Memory Cell ◽  
Solid Phase Crystallization ◽  
Polysilicon Films ◽  
Nitride Oxide

Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

1996 ◽  
Vol 424 ◽  
Author(s):  
Seok-Woon Lee ◽  
Byung-IL Lee ◽  
Tae-Hyung Ihn ◽  
Tae-Kyung Kim ◽  
Young-Tae Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Thin Nickel ◽  
One Step ◽  
Lateral Crystallization ◽  
Si Films

AbstractHigh performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

2001 ◽  
Vol 16 (11) ◽  
pp. 918-924 ◽  
Author(s):  
L Pichon ◽  
K Mourgues ◽  
F Raoult ◽  
T Mohammed-Brahim ◽  
K Kis-Sion ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Polysilicon Films

Low Temperature Polysilicon Materials and Devices

1996 ◽  
Vol 424 ◽  
Author(s):  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
C. Reita ◽  
F. Petinot ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Pulsed Laser ◽  
Large Area ◽  
Thermal Budget ◽  
Polysilicon Films ◽  
The Way ◽  
Large Area Electronics

AbstractIn this paper, we essentially discuss the material aspects of low temperature (≤ 600 °C) polysilicon technologies. Emphasis is put on the properties of polysilicon films, depending on the way they are obtained. Solid phase crystallisation as well as pulsed laser crystallisation processes are presented in some detail, together with thin film transistor characteristics. Although not yet stabilised and despite uniformity and reproducibility problems, laser crystallisation will probably end up being the technology of choice for the manufacture of large area electronics products, because it allows the fabrication of devices exhibiting superior properties, with a reduced thermal budget.

scholarly journals Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 187
Author(s):  
Taiki Kataoka ◽  
Yusaku Magari ◽  
Hisao Makino ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Carrier Density ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Solid Phase Crystallization ◽  
Metal Insulator ◽  
Fully Depleted ◽  
Oxide Tfts

We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V−1s−1 for an a-InOx:H film to 77.2 cm2V−1s−1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm−3, which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μFE) values of 125.7 and 84.7 cm2V−1s−1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the μFE of oxide TFTs.

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