Kinetics of Gas-Phase Chemical Reactions and Growth of a-SiC:H Films from Silane and Acetylene in a Remote Hydrogen Plasma Reactor

1991 ◽  
Vol 219 ◽  
Author(s):  
N. M. Johnson ◽  
Paulo V. Santos ◽  
J. Walker ◽  
K. S. Stevens

ABSTRACTGas-phase chemical reactions of interest for the deposition of amorphous silicon carbide in a remote hydrogen plasma reactor have been quantitatively characterized with electron spin resonance, and the deposition of a-SiC:H from silane and acetylene is demonstrated.

1991 ◽  
Vol 69 (4) ◽  
pp. 2631-2634 ◽  
Author(s):  
N. M. Johnson ◽  
J. Walker ◽  
K. S. Stevens

The electron spin resonance method was employed to study the nature, concentration and kinetics of the disappearance under varying conditions of radicals produced in polyethylene by fast electron irradiation at 77°K. The predominant radical species at 77°K is the alkyl radical —CH 2 —ĊH—CH 2 —. On being warmed to room temperature it disappears rapidly, revealing a more stable un­identified radical. The kinetics of the decay at room temperature of both radicals was observed. Their stabilities were found to vary in polyethylene samples of differing physical and chemical properties. G values for these radicals are given. Comparison was made with spectra obtained under similar conditions with two pure paraffins and a pure olefin to evaluate the effect of crystallinity branching, molecular weight and unsaturation. In the olefin there is evidence for a build-up of allyl radicals due to the encounter of an alkyl radical with main chain unsaturation. This supports the view that alkyl radicals are mobile, and cross-linking occurs when two such radicals meet.


1968 ◽  
Vol 72 (7) ◽  
pp. 2541-2547 ◽  
Author(s):  
Ryo Hirasawa ◽  
Takashi Mukaibo ◽  
Hideo Hasegawa ◽  
Noboru Odan ◽  
Tetsuo Maruyama

2009 ◽  
Vol 1153 ◽  
Author(s):  
Brian J. Simonds ◽  
Feng Zhu ◽  
Josh Gallon ◽  
Jian Hu ◽  
Arun Madan ◽  
...  

AbstractHydrogenated amorphous silicon carbide alloys are being investigated as a possible top photoelectrode in photoelectrochemical cells used for hydrogen production through water splitting. In order to be used as such, it is important that the effects of carbon concentration on bonding, and thus on the electronic and optical properties, is well understood. Electron spin resonance experiments were performed under varying experimental conditions to study the defect concentrations. The dominant defects are silicon dangling bonds. At room temperature, the spin densities varied between 1016 and 1018 spins/cm3 depending on the carbon concentration. Photothermal deflection spectroscopy, which is an extremely sensitive measurement of low levels of absorption in thin films, was performed to investigate the slope of the Urbach tail. These slopes are 78 meV for films containing the lowest carbon concentration and 98 meV for those containing the highest carbon concentration.


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