Kinetics of Gas-Phase Chemical Reactions and Growth of a-SiC:H Films from Silane and Acetylene in a Remote Hydrogen Plasma Reactor
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ABSTRACTGas-phase chemical reactions of interest for the deposition of amorphous silicon carbide in a remote hydrogen plasma reactor have been quantitatively characterized with electron spin resonance, and the deposition of a-SiC:H from silane and acetylene is demonstrated.
1996 ◽
Vol 16
(2)
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pp. 187-194
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1973 ◽
Vol 77
(1)
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pp. 139-141
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1961 ◽
Vol 262
(1309)
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pp. 207-218
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1970 ◽
Vol 74
(6)
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pp. 1166-1173
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1977 ◽
Vol 99
(8)
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pp. 2642-2647
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1973 ◽
Vol 46
(7)
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pp. 2101-2105
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1968 ◽
Vol 72
(7)
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pp. 2541-2547
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