Gas Phase and Gas Surface Kinetics of Transient Silicoin Hydride Species

1993 ◽  
Vol 334 ◽  
Author(s):  
Joseph M. Jasinski

AbstractThis paper presents a summary of the current state of our understanding of the absolute reactivity of transient silicon hydride species, such as SiH, SiH2and SiH3in the gas phase and at the surface of thin films.

2021 ◽  
Vol 02 ◽  
Author(s):  
Corrado Garlisi ◽  
Ahmed Yusuf ◽  
Giovanni Palmisano

Background: Microreactor devices have attracted increasing attention over the last years due to their high surface-to-volume ratio which ensures a high heat and mass transfer, short molecular diffusion distance and greater spatial illumination homogeneity compared to traditional reactors. Objective: The aim of this study was to model the kinetics of photodegradation of 2-propanol over TiO2-based thin films in a gas-phase batch-reactor and simulate their performance in a microreactor device. Methods: The reaction was carried out in a gas-phase batch-reactor assessing the reactivity of a single-layer nitrogen (N)-doped TiO2 and a bilayer consisting of N-doped TiO2 as a bottom layer and copper (Cu)-doped TiO2 as a top layer. The kinetics of the photocatalytic process was modelled by Langmuir–Hinshelwood (LH) model. The constants obtained from LH model were used to simulate the performance of the photocatalysts in a microreactor operating in a continuous flow mode and investigating the effect of the volumetric flow rate (Q), initial concentration of pollutant (Co), number of microchannels (n) and microchannel length (l) on the photodegradation of 2-propanol. Results: N-Cu-TiO2 exhibited a higher reactivity but a lower to adsorption ability towards the target pollutant compared to N-TiO2. To maximize and leverage the advantages of microreactor, optimal operating conditions for a continuous flow mode, at steady state, should be moderately low Q and Co, long l and moderate n that minimizes flow maldistribution in parallel. Conclusion: The findings in this work could serve as a basis to design and fabricate efficient microreactors for the removal of VOC in air purification applications.


2020 ◽  
Vol 8 (16) ◽  
pp. 7968-7979 ◽  
Author(s):  
Matthäus Siebenhofer ◽  
Tobias Martin Huber ◽  
Gernot Friedbacher ◽  
Werner Artner ◽  
Jürgen Fleig ◽  
...  

With in situ impedance spectroscopy during pulsed laser deposition remarkably fast in situ oxygen surface kinetics of LSC were discovered.


1996 ◽  
Vol 104 (19) ◽  
pp. 7713-7718 ◽  
Author(s):  
M. Schick ◽  
J. Xie ◽  
W. J. Mitchell ◽  
W. H. Weinberg

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.


1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.


Author(s):  
Vladimir S. Chirvony ◽  
Isaac Suárez ◽  
Jesús Rodríguez-Romero ◽  
Rubén Vázquez-Cárdenas ◽  
Jesus Sanchez-Diaz ◽  
...  

2011 ◽  
Vol 13 (37) ◽  
pp. 16530 ◽  
Author(s):  
Anja Wedig ◽  
Rotraut Merkle ◽  
Benjamin Stuhlhofer ◽  
Hanns-Ulrich Habermeier ◽  
Joachim Maier ◽  
...  

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