SMOS: A CAD-compatible statistical model for analogue mos integrated circuit simulation

1992 ◽  
Vol 20 (3) ◽  
pp. 327-348 ◽  
Author(s):  
Christopher Michael ◽  
Christopher Abel ◽  
Mohammed Ismail
Keyword(s):  
Statistical Model ◽  
Integrated Circuit ◽  
Circuit Simulation

A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation

1982 ◽  
Vol 30 (5) ◽  
pp. 719-724 ◽  
Author(s):  
T. Takada ◽  
Yokoyama ◽  
Kiyoyuki ◽  
M. Ida ◽  
T. Sudo
Keyword(s):  
Integrated Circuit ◽  
Circuit Simulation ◽  
Variable Capacitance ◽  
Capacitance Model

Study on Opto-Electronic Integration of Resonant Tunnelling Diodes

2007 ◽  
Vol 121-123 ◽  
pp. 533-536
Author(s):  
Ping Juan Niu ◽  
Hai Rong Hu ◽  
Hong Wei Liu ◽  
Wen Xin Wang ◽  
Xun Zhong Shang
Keyword(s):  
Technological Process ◽  
Integrated Circuit ◽  
Circuit Simulation ◽  
High Peak ◽  
Material Structure ◽  
Current Ratio ◽  
Good Characteristic ◽  
Resonant Tunnelling ◽  
Electronic Integration

We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction Phototransistor (HPT). Circuit simulation of RTD and HPT integration is firstly processed. The material structure and technological process of the device is introduced in detail. A good characteristic is obtained with high Peak-to-valley current ratio.

scholarly journals Modelling and Analysis of Energy Harvesting in Internet of Things (IoT): Characterization of a Thermal Energy Harvesting Circuit for IoT based Applications with LTC3108

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3873 ◽  
Author(s):  
Syeda Adila Afghan ◽  
Husi Géza
Keyword(s):  
Energy Harvesting ◽  
Internet Of Things ◽  
Thermal Energy ◽  
Integrated Circuit ◽  
Circuit Simulation ◽  
Extraction Methods ◽  
Electrical Circuit ◽  
Energy Scavenging ◽  
Power Requirement ◽  
Resistive Loads

This paper presents a simulation-based study for characterizing and analyzing the performance of a commercially available thermoelectric cooler (TEC) as a generator for harvesting heat energy along with a commercial-off-the-shelf (COTS) power management integrated circuit (PMIC); LTC3108. In this model, the transformation of heat was considered in terms of an electrical circuit simulation perspective, where temperature experienced by TEC on both cold and hot sides was incorporated with voltage supply as Vth and Vtc in the circuit. When it comes to modeling a system in a simulation program with an integrated circuit emphasis (SPICE) like environment, the selection of thermoelectric generator (TEG) and extraction methods are not straightforward as well as the lack of information from manufacturer’s datasheets can limit the grip over the analysis parameters of the module. Therefore, it is mandatory to create a prototype before implementing it over a physical system for energy harvesting circuit (EHC) optimization. The major goal was to establish the basis for devising the thermal energy scavenging based Internet of Things (IoT) system with two configurations of voltage settings for the same TEG model. This study measured the data in terms of current, voltage, series of resistive loads and various temperature gradients for generating the required power. These generated power levels from EHC prototype were able to sustain the available IoT component’s power requirement, hence it could be considered for the implementation of IoT based applications.

scholarly journals Circuit Simulation Considering Electrical Coupling in Monolithic 3D Logics with Junctionless FETs

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 887
Author(s):  
Tae Jun Ahn ◽  
Yun Seop Yu
Keyword(s):  
Integrated Circuit ◽  
Computer Aided Design ◽  
Circuit Simulation ◽  
Electrical Coupling ◽  
Ring Oscillator ◽  
Model Parameters ◽  
Flip Flop ◽  
Circuit Simulator ◽  
Aided Design ◽  
Better Than

The junctionless field-effect transistor (JLFET) compact model using the model parameters extracted from the LETI-UTSOI (version 2.1) model was proposed to perform circuit simulation considering the electrical coupling between the stacked JLFETs of a monolithic 3D integrated circuit (M3DIC) composed of JLFETs (M3DIC-JLFET). We validated the model by extracting the model parameters and comparing the simulation results of the technology computer-aided design and the Synopsys HSPICE circuit simulator. The performance of the M3DIC-JLFET was compared with that of the M3DIC composed of MOSFETs (M3DIC-MOSFET). The performance of a fan-out-3 ring oscillator with M3DIC-JLFET varied by less than 3% compared to that with M3DIC-MOSFET. The performances of ring oscillators of M3DIC-JLFET and M3DIC-MOSFET were almost the same. We simulated the performances of M3DICs such as an inverter, a NAND, a NOR, a 2 × 1 multiplexer, and a D flip-flop. The overall performance of the M3DIC-MOSFET was slightly better than that of the M3DIC-JLFET.

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