Wafer Characterization of an Epi Reactor Using Sheet Resistance Mapping

1986 ◽  
Vol 71 ◽  
Author(s):  
Walter H. Johnson ◽  
W. Andrew Keenan ◽  
Alan K. Smith
Keyword(s):  
Process Control ◽  
Sheet Resistance ◽  
Integrated Circuit ◽  
Mapping Technique ◽  
Gas Flows ◽  
Epitaxial Silicon ◽  
Contour Maps ◽  
Silicon Growth ◽  
Indispensable Tool

AbstractSheet resistance mapping has become an indispensable tool in characterizing ion implanters for both integrated circuit manufacturers and equipment manufacturers. The sheet resistance mapping technique is now being extended into additional applications such as the characterization of metal deposition, CVD, and epitaxial silicon growth. This technique has become especially necessary with the advent of 150mm and 200mm wafers, where 5 or 9 site measurements cannot provide sufficient data essential for process control.In order to optimize the performance of an epi reactor it is necessary to control and characterize the gas flows and temperature distributions inside the reactor. The control of these variables is essential for thickness and resistivity uniformity in epi layers. This paper describes the use of sheet resistance profiles and contour maps to study the resistivity and thickness uniformity variations in an epi reactor. The sheet resistance maps allow for control of the epi process without requiring data from other test sources.This ensures real time process control for production, as well as very rapid feedback for maintenance while doing equipment repair.

Characterization of Buried-Nitride Silicon for Integrated Circuit Applications

1987 ◽  
Vol 93 ◽  
Author(s):  
D. R. Myers ◽  
H. J. Stein ◽  
S. S. Tsao ◽  
G. W. Arnold ◽  
R. C. Hughes ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Transport Properties ◽  
Integrated Circuit ◽  
Silicon On Insulator ◽  
Epitaxial Silicon ◽  
Bulk Silicon ◽  
Excess Silicon ◽  
P Type ◽  
Type Conduction

ABSTRACTWe have examined the microstructure and the transport properties of nitrogen-implanted silicon-on-insulator wafers, as well as the performance of integrated-circuit transistors fabricated in this material. The insulating regions were fabricated in silicon by the unpatterned implantation of 4×1017 /cm2, 300 keV nitrogen dimers followed by annealing at 1473 K for 5 hours. For these parameters, the buried nitrogen-implanted layer crystallized into α-silicon nitride, and contains ≈20% excess silicon in the form of silicon inclusions of 5–15 nm diameter. The surface silicon layers are characterized by low-mobility, p-type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. Functional p-channel, integrated circuit transistors have been fabricated in n-type epitaxial silicon grown over the buried-nitride wafers. These transistors devices are similar in performance to those fabricated in bulk silicon,(hole mobilities in inversion layers of 140 cm2/V-s), and demonstrate the suitability of the buried nitride process for integrated circuit applications.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Emerging Techniques for the Characterization of Nano-Mechanical Properties of Integrated Circuit Components

2008 ◽  
Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair
Keyword(s):  
Mechanical Properties ◽  
Quality Control ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Manufacturing Process ◽  
Solder Bumps ◽  
Initial Work ◽  
Circuit Components ◽  
Materials Used

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.

scholarly journals Simple and Efficient Protocol for Subcellular Fractionation of Normal and Apoptotic Cells

Cells ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 852
Author(s):  
Viacheslav V. Senichkin ◽  
Evgeniia A. Prokhorova ◽  
Boris Zhivotovsky ◽  
Gelina S. Kopeina
Keyword(s):  
Subcellular Fractionation ◽  
Nuclear Fraction ◽  
Apoptotic Cells ◽  
Apoptotic Bodies ◽  
Functional Studies ◽  
Ionic Detergents ◽  
Protein Functions ◽  
Indispensable Tool ◽  
Cell Fragments

Subcellular fractionation approaches remain an indispensable tool among a large number of biochemical methods to facilitate the study of specific intracellular events and characterization of protein functions. During apoptosis, the best-known form of programmed cell death, numerous proteins are translocated into and from the nucleus. Therefore, suitable biochemical techniques for the subcellular fractionation of apoptotic cells are required. However, apoptotic bodies and cell fragments might contaminate the fractions upon using the standard protocols. Here, we compared different nucleus/cytoplasm fractionation methods and selected the best-suited approach for the separation of nuclear and cytoplasmic contents. The described methodology is based on stepwise lysis of cells and washing of the resulting nuclei using non-ionic detergents, such as NP-40. Next, we validated this approach for fractionation of cells treated with various apoptotic stimuli. Finally, we demonstrated that nuclear fraction could be further subdivided into nucleosolic and insoluble subfractions, which is crucial for the isolation and functional studies of various proteins. Altogether, we developed a method for simple and efficient nucleus/cytoplasm fractionation of both normal and apoptotic cells.

3-Dimensional Characterization of Polycrystalline Bulk Materials Using High-Energy Synchrotron Radiation

2007 ◽  
Vol 539-543 ◽  
pp. 2353-2358 ◽  
Author(s):  
Ulrich Lienert ◽  
Jonathan Almer ◽  
Bo Jakobsen ◽  
Wolfgang Pantleon ◽  
Henning Friis Poulsen ◽  
...  
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
High Energy ◽  
Mapping Technique ◽  
X Ray Diffraction ◽  
Bulk Materials ◽  
Reciprocal Space Mapping ◽  
3 Dimensional ◽  
Individual Grains

The implementation of 3-Dimensional X-Ray Diffraction (3DXRD) Microscopy at the Advanced Photon Source is described. The technique enables the non-destructive structural characterization of polycrystalline bulk materials and is therefore suitable for in situ studies during thermo-mechanical processing. High energy synchrotron radiation and area detectors are employed. First, a forward modeling approach for the reconstruction of grain boundaries from high resolution diffraction images is described. Second, a high resolution reciprocal space mapping technique of individual grains is presented.

Sign in / Sign up

Export Citation Format

Share Document