ChemInform Abstract: In situ Studies on Reaction Mechanisms in Atomic Layer Deposition

ChemInform ◽  
2013 ◽  
Vol 44 (46) ◽  
pp. no-no
Author(s):  
Kjell Knapas ◽  
Mikko Ritala
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
In Situ Studies ◽  
Layer Deposition

scholarly journals In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 645
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Frédérique Donsanti
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Side Reactions ◽  
Chemical Surface ◽  
Copper Indium Disulfide ◽  
Layer Deposition ◽  
Copper Indium ◽  
Gas Phase Ion

Reaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed.

scholarly journals Atomic Layer Deposition of ZnO on Mesoporous Silica: Insights into Growth Behavior of ZnO via In-Situ Thermogravimetric Analysis

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 981 ◽  
Author(s):  
Piyush Ingale ◽  
Kristian Knemeyer ◽  
Mar Piernavieja Hermida ◽  
Raoul Naumann d’Alnoncourt ◽  
Arne Thomas ◽  
...  
Keyword(s):  
Thermogravimetric Analysis ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Ex Situ ◽  
Direct Access ◽  
Layer Deposition

ZnO is a remarkable material with many applications in electronics and catalysis. Atomic layer deposition (ALD) of ZnO on flat substrates is an industrially applied and well-known process. Various studies describe the growth of ZnO layers on flat substrates. However, the growth characteristics and reaction mechanisms of atomic layer deposition of ZnO on mesoporous powders have not been well studied. This study investigates the ZnO ALD process based on diethylzinc (DEZn) and water with silica powder as substrate. In-situ thermogravimetric analysis gives direct access to the growth rates and reaction mechanisms of this process. Ex-situ analytics, e.g., N2 sorption analysis, XRD, XRF, HRTEM, and STEM-EDX mapping, confirm deposition of homogenous and thin films of ZnO on SiO2. In summary, this study offers new insights into the fundamentals of an ALD process on high surface area powders.

In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope

2010 ◽  
Vol 518 (16) ◽  
pp. 4688-4691 ◽  
Author(s):  
Krzysztof Kolanek ◽  
Massimo Tallarida ◽  
Konstantin Karavaev ◽  
Dieter Schmeisser
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Force Microscope ◽  
High Vacuum ◽  
Atomic Layer ◽  
Ultra High Vacuum ◽  
In Situ Studies ◽  
Atomic Force ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies

2020 ◽  
Vol 2 (12) ◽  
pp. 3915-3922
Author(s):  
Giulio D’Acunto ◽  
Andrea Troian ◽  
Esko Kokkonen ◽  
Foqia Rehman ◽  
Yen-Po Liu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Time Resolved ◽  
In Situ Studies ◽  
Layer Deposition

In-situ Studies of Atomic Layer Deposition Studies on High-Mobility Channel Materials

2019 ◽  
Vol 25 (4) ◽  
pp. 115-122
Author(s):  
Marko Milojevic ◽  
Arif M. Sonnet ◽  
Christopher L. Hinkle ◽  
Hyun C. Kim ◽  
Eric M. Vogel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Mobility ◽  
Atomic Layer ◽  
In Situ Studies ◽  
Layer Deposition ◽  
High Mobility Channel
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