In-situ Studies of Atomic Layer Deposition Studies on High-Mobility Channel Materials

2019 ◽  
Vol 25 (4) ◽  
pp. 115-122
Author(s):  
Marko Milojevic ◽  
Arif M. Sonnet ◽  
Christopher L. Hinkle ◽  
Hyun C. Kim ◽  
Eric M. Vogel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Mobility ◽  
Atomic Layer ◽  
In Situ Studies ◽  
Layer Deposition ◽  
High Mobility Channel

In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope

2010 ◽  
Vol 518 (16) ◽  
pp. 4688-4691 ◽  
Author(s):  
Krzysztof Kolanek ◽  
Massimo Tallarida ◽  
Konstantin Karavaev ◽  
Dieter Schmeisser
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Force Microscope ◽  
High Vacuum ◽  
Atomic Layer ◽  
Ultra High Vacuum ◽  
In Situ Studies ◽  
Atomic Force ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies

2020 ◽  
Vol 2 (12) ◽  
pp. 3915-3922
Author(s):  
Giulio D’Acunto ◽  
Andrea Troian ◽  
Esko Kokkonen ◽  
Foqia Rehman ◽  
Yen-Po Liu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Time Resolved ◽  
In Situ Studies ◽  
Layer Deposition

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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