ChemInform Abstract: ETCHING AND X-RAY DIFFRACTION STUDIES OF THE 111-A AND 111-B FACES OF GALLIUM INDIUM PHOSPHIDE ARSENIDE (GAXIN1-XPYAS1-Y) CRYSTALS

1979 ◽  
Vol 10 (43) ◽  
Author(s):  
F. A. THIEL ◽  
R. L. BARNS
Keyword(s):  
Indium Phosphide ◽  
Gallium Indium Phosphide ◽  
X Ray Diffraction ◽  
X Ray

Characteristics of Sulfur in OMVPE Grown Indium Phosphide

1990 ◽  
Vol 204 ◽  
Author(s):  
S.D. Tyagi ◽  
H. Ehsani ◽  
S.K. Ghandhi
Keyword(s):  
Hydrogen Sulfide ◽  
Indium Phosphide ◽  
Carrier Concentration ◽  
Rapid Decrease ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Linear Region ◽  
Double Crystal ◽  
X Ray ◽  
Partial Pressures

ABSTRACTDoping of indium phosphide, grown by organometallic vapor phase epitaxy (OMVPE), has been carried out using hydrogen sulfide. For low partial pressures of H2S, the carrier concentration in the epitaxial layers is found to increase linearly. However, for higher partial pressures a region of superlinear doping is seen. For still higher partial pressures, a rapid decrease in carrier concentration is seen. In the linear region, the doping has a weak dependence on phosphine pressure, however, peak carrier concentration is higher for lower phosphine pressures.The layers were studied using Hall Effect and Double Crystal X-Ray Diffraction, in order to elucidate the nature of impurities and compensating centers introduced. A model which explains the above characteristics is proposed for S incorporation in MOVPE grown InP.

X-ray diffraction with a four-reflection monochromator

1987 ◽  
Vol 20 (6) ◽  
pp. 522-528 ◽  
Author(s):  
S. E. G. Slusky ◽  
A. T. Macrander
Keyword(s):  
Experimental Data ◽  
Indium Phosphide ◽  
Single Crystal ◽  
Simulated Data ◽  
Vertical Gradient ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Vertical Gradient Freeze

A formula is derived for simulating rocking-curve measurements made with an X-ray diffractometer fitted with a four-reflection monochromator. The derivation is carried out both graphically and algebraically. Results of a simulation using this formula are then compared with experimentally obtained rocking curves. The rocking curves were obtained using a diffractometer with a four-reflection monochromator that uses 440 reflections from two channel-cut germanium crystals. The experimental data comprise 200, 400, 600, 511, 711, 622, 422 and 444 reflections from thick single-crystal indium phosphide grown by the vertical-gradient freeze technique. The simulated data correlate well with the experimental data, although the simulations consistently show somewhat higher reflectivities and narrower linewidths than the experiment, indicating the existence of broadening mechanisms not included in the simulation that are affecting the experiment.

Towards the Realization of a INP/CDS/LAS Cold Cathode

1999 ◽  
Vol 558 ◽  
Author(s):  
M. Cahay ◽  
A. Malhotra ◽  
Y. Modukuru ◽  
H. Tang ◽  
W. Bresser ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Cubic Phase ◽  
Cold Cathode ◽  
Negative Electron Affinity ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Past ◽  
Thin Region ◽  
Heavily Doped ◽  
Lanthanum Sulfide

ABSTRACTIn the past, we have proposed a new cold cathode emitter which consists of a thin region of CdS (Cadmium Sulfide) sandwiched between a heavily doped InP (Indium Phosphide) substrate and a low work function LaS (Lanthanum Sulfide) semimetallic thin film. In this paper, we briefly review the principle of operation of the cathode and discuss the preliminary experimental steps undertaken to realize prototypes of the device. More specifically, we describe the growth of bulk samples of LaS which is used to achieve Negative Electron Affinity of the CdS/LaS surface. X-ray diffraction and micro-Raman experiments show the successful growth of the fcc cubic phase of LaS samples.

High pressure induced phase transition in sulfur doped indium phosphide: An angular-dispersive X-ray diffraction and Raman study

2009 ◽  
Vol 149 (3-4) ◽  
pp. 136-141 ◽  
Author(s):  
Chih-Ming Lin ◽  
Hwo-Shuenn Sheu ◽  
Min-Hsiung Tsai ◽  
Bi-Ru Wu ◽  
Sheng-Rui Jian
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Indium Phosphide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Raman Study

scholarly journals Изучение сверхструктуры в сильно легированном пористом фосфиде индия рентгеновскими методами

2018 ◽  
Vol 52 (1) ◽  
pp. 89
Author(s):  
М.Е. Бойко ◽  
М.Д. Шарков ◽  
Л.Б. Карлина ◽  
А.М. Бойко ◽  
С.Г. Конников
Keyword(s):  
Indium Phosphide ◽  
X Ray Diffraction ◽  
Long Distance ◽  
Saxs Data ◽  
X Ray ◽  
X Ray Scattering ◽  
Translation Symmetry ◽  
Anomalous Transmission ◽  
Point Detector ◽  
Generation Procedure

AbstractAn indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with Cu K _α1-radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1 0) of the InP lattice are found to be ~260 and 450 nm, respectively. The symmetry group of the superstructure is determined as C _2 v in the (001) plane of the sample lattice.

High-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires

2005 ◽  
Vol 97 (8) ◽  
pp. 084318 ◽  
Author(s):  
T. Kawamura ◽  
S. Bhunia ◽  
Y. Watanabe ◽  
S. Fujikawa ◽  
J. Matsui ◽  
...  
Keyword(s):  
High Resolution ◽  
Indium Phosphide ◽  
Diffraction Analysis ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Роль BiPO4, вводимого через газовую фазу, в процессе создания тонких пленок на поверхности InP

2019 ◽  
Vol 21 (2) ◽  
pp. 215-224
Author(s):  
Victor F. Kostryukov ◽  
Irina Y. Mittova ◽  
Boris V. Sladkopevtsev ◽  
Anna S. Parshina ◽  
Dar’ya S. Balasheva
Keyword(s):  
Indium Phosphide ◽  
Thermal Oxidation ◽  
Electronic Device ◽  
Film Deposition ◽  
Inorganic Materials ◽  
Current Status ◽  
X Ray Diffraction ◽  
Oxide Layers ◽  
X Ray ◽  
Academy Of Sciences

Исследованием термооксидирования фосфида индия под воздействием фосфата висмута, вводимого через газовую фазу, установлено ускоряющее воздействие фосфата висмута на процесс формирования пленок. Величина ускорения составляет от 1.5 до 2 раз, и максимальный прирост пленки достигается в первые 10 мин оксидирования. Определяющим процессом является образование фосфата индия за счет вторичного взаимодействия оксидных форм компонентов подложки, лимитируемое диффузией оксидов в твердой фазе. Методами инфракрасной спектроскопии, локального рентгеноспектрального микроанализа и рентгенофазового анализа установлен состав пленок на поверхности InP, основными компонентами которого являются различные фосфаты индия     REFERENCES Wager J. F., Wilmsen C. W. Thermal oxidation of InP. Appl. Phys., 1980, v. 51(1), pp. 812–814. https://doi.org/10.1063/1.327302 Yamaguchi M., Ando K. Thermal oxidation of InP and properties of oxide fi lm. Appl. Phys., 1980, v. 5(9), pp. 5007–5012. https://doi.org/10.1063/1.3283803. Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) Minaychev V. Ye. Naneseniye plonok v vakuume. [Film deposition in vacuum]. Moscow, Vyssh. Shkola Publ., 1989, 130 p. (in Russ.) Nikitin M. M. Tekhnologiya i oborudovaniye vakuumnogo napyleniya [Technology and equipment for vacuum deposition]. Moscow, Metallurgiya Publ., 1992, 112 p. (in Russ.) Veselov A. A., Veselov A. G., Vysotsky S. L., Dzhumaliyev A. S., Filimonov Yu. A. Magnetic properties of thermally deposited Fe/GaAs (100) thin fi lms. J Technical Physics, 2002, v. 47(8), pp. 1067–1070. https://doi.org/10.1134/1.1501694 Danilin B. S. Magnetronnyye raspylitel’nyye sistemy [Magnetron Spray Systems]. Moscow, Radio i svyaz’ Publ., 1982, 72 p. Pulver D., Wilmsen C.W. Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P. Vac. Sci. Technol. B., 2001, v. 19(1), pp. 207–214. https://doi.org/10.1116/1.1342008 Punkkinen M. P. J., Laukkanen P., Lеng J., Kuzmin M., Tuominen M., Tuominen V., Dahl J., Pessa M., Guina M., Kokko K., Sadowski J., Johansson B., Väyrynen I. J., Vitos L. Oxidized In-containing III–V(100) surfaces: Formation of crystalline oxide fi lms and semiconductor-oxide interfaces. Physical review, 2011, v. 83(19), pp. 195–329. https://doi.org/10.1103/Phys-RevB.83.195329 Sladkopevtsev B. V., Tomina E. V., Mittova I. Ya., Dontsov A. I., Pelipenko D. I. On the thermal oxidation of VxOy–InP heterostructures formed by the centrifugation of vanadium (V) oxide gel. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, v. 10(2), pp. 335–340. https://doi.org/10.1134/S102745101602018X Ningyi Y. Comparison of VO2 thin fi lms prepared by inorganic sol-gel and IBED methods. Appl. Phys. A., 2003, v. 78. pp. 777–780. https://doi.org/10.1007/s00339-002-2057-5 Herman M. A., Sitter H. Epitaxy: Fundamentals and Current Status. Heidelberg, Springer Science & Business Media, 2013, 382 p. Manijeh R. The MOCVD Challenge: A survey of GaInAsP–InP and GaInAsP–GaAs for photonic and electronic device applications. Boca Raton, CRC Press, 2010, 799 p. https://doi.org/10.1201/9781439807002 Mittova Ya. Multichannel reactions in chemostimulated oxidation of semiconductors – transit, conjugation, catalysis. Vestnik VGU. Serija: Himija, biologija [Bulletin of the VSU. Series: Chemistry, Biology], 2000, 2, pp. 5–12. (in Russ.) Mittova Ya. Infl uence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP. Inorganic Materials, 2014, V. 50(9), pp. 874–881. https://doi.org/10.1134/S0020168514090088. Brauer G. A. Rukovodstvo po neorganicheskomu sintezu [Inorganic Synthesis Guide]. Moscow, Khimiya Publ., 1985, 360 с. (in Russ.) Nakamoto K. Infared and Raman Spectra of Inorganic and Coordination Compounds. New York, John Wiley & Sons Ltd, 1986, 335 p. Atlas IK-spektrov fosfatov [Atlas IR spectra of phosphates]. by R.YA. Mel’nikovoy. Moscow, Nauka Publ., 1985, 235 p. (in Russ.) Brandon D., Kaplan W. Microstructural Characterization of Materials. 2nd Edition, John Wiley & Sons Ltd, 2008, 536 p. https://doi.org/10.1002/9780470727133 International Center for Diffraction Data. 21. X-ray diffraction date cards, ASTM. X-ray diffraction date cards, ASTM. Kazenas B.K. Termodinamika ispareniya dvoynykh oksidov. [Thermodynamics of double oxide evaporation]. Мoscow, Nauka Publ., 2004, 551 p. (in Russ.)

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Ribosome Structural Organization

1974 ◽  
Vol 32 ◽  
pp. 332-333
Author(s):  
James A. Lake
Keyword(s):  
Ribosomal Proteins ◽  
Structural Organization ◽  
Three Dimensional ◽  
Small Subunit ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Specific Antibodies ◽  
X Ray ◽  
E Coli ◽  
Complete Sequences

The understanding of ribosome structure has advanced considerably in the last several years. Biochemists have characterized the constituent proteins and rRNA's of ribosomes. Complete sequences have been determined for some ribosomal proteins and specific antibodies have been prepared against all E. coli small subunit proteins. In addition, a number of naturally occuring systems of three dimensional ribosome crystals which are suitable for structural studies have been observed in eukaryotes. Although the crystals are, in general, too small for X-ray diffraction, their size is ideal for electron microscopy.

Electron Microscopy of Human Gallstones

1971 ◽  
Vol 29 ◽  
pp. 296-297
Author(s):  
C. Wolpers ◽  
R. Blaschke
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Bile Pigment ◽  
X Ray Diffraction ◽  
Triclinic Crystal System ◽  
X Ray ◽  
Follow Up Study ◽  
Infra Red ◽  
Main Components

Scanning microscopy was used to study the surface of human gallstones and the surface of fractures. The specimens were obtained by operation, washed with water, dried at room temperature and shadowcasted with carbon and aluminum. Most of the specimens belong to patients from a series of X-ray follow-up study, examined during the last twenty years. So it was possible to evaluate approximately the age of these gallstones and to get information on the intensity of growing and solving.Cholesterol, a group of bile pigment substances and different salts of calcium, are the main components of human gallstones. By X-ray diffraction technique, infra-red spectroscopy and by chemical analysis it was demonstrated that all three components can be found in any gallstone. In the presence of water cholesterol crystallizes in pane-like plates of the triclinic crystal system.

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