scholarly journals Роль BiPO4, вводимого через газовую фазу, в процессе создания тонких пленок на поверхности InP

2019 ◽  
Vol 21 (2) ◽  
pp. 215-224
Author(s):  
Victor F. Kostryukov ◽  
Irina Y. Mittova ◽  
Boris V. Sladkopevtsev ◽  
Anna S. Parshina ◽  
Dar’ya S. Balasheva
Keyword(s):  
Indium Phosphide ◽  
Thermal Oxidation ◽  
Electronic Device ◽  
Film Deposition ◽  
Inorganic Materials ◽  
Current Status ◽  
X Ray Diffraction ◽  
Oxide Layers ◽  
X Ray ◽  
Academy Of Sciences

Исследованием термооксидирования фосфида индия под воздействием фосфата висмута, вводимого через газовую фазу, установлено ускоряющее воздействие фосфата висмута на процесс формирования пленок. Величина ускорения составляет от 1.5 до 2 раз, и максимальный прирост пленки достигается в первые 10 мин оксидирования. Определяющим процессом является образование фосфата индия за счет вторичного взаимодействия оксидных форм компонентов подложки, лимитируемое диффузией оксидов в твердой фазе. Методами инфракрасной спектроскопии, локального рентгеноспектрального микроанализа и рентгенофазового анализа установлен состав пленок на поверхности InP, основными компонентами которого являются различные фосфаты индия     REFERENCES Wager J. F., Wilmsen C. W. Thermal oxidation of InP. Appl. Phys., 1980, v. 51(1), pp. 812–814. https://doi.org/10.1063/1.327302 Yamaguchi M., Ando K. Thermal oxidation of InP and properties of oxide fi lm. Appl. Phys., 1980, v. 5(9), pp. 5007–5012. https://doi.org/10.1063/1.3283803. Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) Minaychev V. Ye. Naneseniye plonok v vakuume. [Film deposition in vacuum]. Moscow, Vyssh. Shkola Publ., 1989, 130 p. (in Russ.) Nikitin M. M. Tekhnologiya i oborudovaniye vakuumnogo napyleniya [Technology and equipment for vacuum deposition]. Moscow, Metallurgiya Publ., 1992, 112 p. (in Russ.) Veselov A. A., Veselov A. G., Vysotsky S. L., Dzhumaliyev A. S., Filimonov Yu. A. Magnetic properties of thermally deposited Fe/GaAs (100) thin fi lms. J Technical Physics, 2002, v. 47(8), pp. 1067–1070. https://doi.org/10.1134/1.1501694 Danilin B. S. Magnetronnyye raspylitel’nyye sistemy [Magnetron Spray Systems]. Moscow, Radio i svyaz’ Publ., 1982, 72 p. Pulver D., Wilmsen C.W. Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P. Vac. Sci. Technol. B., 2001, v. 19(1), pp. 207–214. https://doi.org/10.1116/1.1342008 Punkkinen M. P. J., Laukkanen P., Lеng J., Kuzmin M., Tuominen M., Tuominen V., Dahl J., Pessa M., Guina M., Kokko K., Sadowski J., Johansson B., Väyrynen I. J., Vitos L. Oxidized In-containing III–V(100) surfaces: Formation of crystalline oxide fi lms and semiconductor-oxide interfaces. Physical review, 2011, v. 83(19), pp. 195–329. https://doi.org/10.1103/Phys-RevB.83.195329 Sladkopevtsev B. V., Tomina E. V., Mittova I. Ya., Dontsov A. I., Pelipenko D. I. On the thermal oxidation of VxOy–InP heterostructures formed by the centrifugation of vanadium (V) oxide gel. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, v. 10(2), pp. 335–340. https://doi.org/10.1134/S102745101602018X Ningyi Y. Comparison of VO2 thin fi lms prepared by inorganic sol-gel and IBED methods. Appl. Phys. A., 2003, v. 78. pp. 777–780. https://doi.org/10.1007/s00339-002-2057-5 Herman M. A., Sitter H. Epitaxy: Fundamentals and Current Status. Heidelberg, Springer Science & Business Media, 2013, 382 p. Manijeh R. The MOCVD Challenge: A survey of GaInAsP–InP and GaInAsP–GaAs for photonic and electronic device applications. Boca Raton, CRC Press, 2010, 799 p. https://doi.org/10.1201/9781439807002 Mittova Ya. Multichannel reactions in chemostimulated oxidation of semiconductors – transit, conjugation, catalysis. Vestnik VGU. Serija: Himija, biologija [Bulletin of the VSU. Series: Chemistry, Biology], 2000, 2, pp. 5–12. (in Russ.) Mittova Ya. Infl uence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP. Inorganic Materials, 2014, V. 50(9), pp. 874–881. https://doi.org/10.1134/S0020168514090088. Brauer G. A. Rukovodstvo po neorganicheskomu sintezu [Inorganic Synthesis Guide]. Moscow, Khimiya Publ., 1985, 360 с. (in Russ.) Nakamoto K. Infared and Raman Spectra of Inorganic and Coordination Compounds. New York, John Wiley & Sons Ltd, 1986, 335 p. Atlas IK-spektrov fosfatov [Atlas IR spectra of phosphates]. by R.YA. Mel’nikovoy. Moscow, Nauka Publ., 1985, 235 p. (in Russ.) Brandon D., Kaplan W. Microstructural Characterization of Materials. 2nd Edition, John Wiley & Sons Ltd, 2008, 536 p. https://doi.org/10.1002/9780470727133 International Center for Diffraction Data. 21. X-ray diffraction date cards, ASTM. X-ray diffraction date cards, ASTM. Kazenas B.K. Termodinamika ispareniya dvoynykh oksidov. [Thermodynamics of double oxide evaporation]. Мoscow, Nauka Publ., 2004, 551 p. (in Russ.)

Synchrotron X-ray Diffraction Studies of Thermal Oxidation of Si and SiGe

2019 ◽  
Vol 19 (2) ◽  
pp. 479-493
Author(s):  
Takayoshi Shimura ◽  
Yuki Okamoto ◽  
Daisuke Shimokawa ◽  
Tomoyuki Inoue ◽  
Takuji Hosoi ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Highly Stable Thin Films Based on Novel Hybrid 1D (PRSH)PbX3 Pseudo-Perovskites

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2765
Author(s):  
Gabriele Calabrese ◽  
Candida Pipitone ◽  
Diego Marini ◽  
Francesco Giannici ◽  
Antonino Martorana ◽  
...  
Keyword(s):  
Thin Films ◽  
Mixed Solvents ◽  
Volume Ratio ◽  
Grazing Incidence ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Perovskite Materials ◽  
Anion Type ◽  
Solvent Volume

In this study, the structure and morphology, as well as time, ultraviolet radiation, and humidity stability of thin films based on newly developed 1D (PRSH)PbX3 (X = Br, I) pseudo-perovskite materials, containing 1D chains of face-sharing haloplumbate octahedra, are investigated. All films are strongly crystalline already at room temperature, and annealing does not promote further crystallization or film reorganization. The film microstructure is found to be strongly influenced by the anion type and, to a lesser extent, by the DMF/DMSO solvent volume ratio used during film deposition by spin-coating. Comparison of specular X-ray diffraction and complementary grazing incidence X-ray diffraction analysis indicates that the use of DMF/DMSO mixed solvents promotes the strengthening of a dominant 100 or 210 texturing, as compared the case of pure DMF, and that the haloplumbate chains always lie in a plane parallel to the substrate. Under specific DMF/DMSO solvent volume ratios, the prepared films are found to be highly stable in time (up to seven months under fluxing N2 and in the dark) and to highly moist conditions (up to 25 days at 78% relative humidity). Furthermore, for representative (PRSH)PbX3 films, resistance against ultraviolet exposure (λ = 380 nm) is investigated, showing complete stability after irradiation for up to 15 h at a power density of 600 mW/cm2. These results make such thin films interesting for highly stable perovskite-based (opto)electronic devices.

Solvothermal synthesis of hollow Eu2O3 microspheres using carbon template-assisted method

2012 ◽  
Vol 66 (8) ◽  
Author(s):  
Li-Xin Zhang ◽  
Yi-Xin Sun ◽  
Hong-Fang Jiu ◽  
Yue-Hua Fu ◽  
Yuan-Zhong Wang ◽  
...  
Keyword(s):  
Solvothermal Synthesis ◽  
Sol Gel ◽  
Hollow Structure ◽  
Inorganic Materials ◽  
Carbon Sphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Productivity ◽  
Carbon Template ◽  
Transmission Electron

AbstractThis work presents a sol-gel carbon sphere template-assisted method of hollow Eu2O3 microspheres preparation. X-ray diffraction (XRD), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), as well as photoluminescence (PL) were used to characterise the products. The formation of hollow structure Eu2O3 microspheres can be assigned to a sol-gel carbon template. Furthermore, this work may confirm that the precursor sol-gel can be loaded onto the inner as well as the outer surface of carbon templates similarly as ions and nanocrystals. The presented method can afford a simple and efficient technique to obtain a series of hollow structure inorganic materials with high productivity.

X-Ray Diffraction Intensity of Oxife Soild Soultions: Application to Qualitative and Quantitative Phase Analysis

1982 ◽  
Vol 26 ◽  
pp. 119-128 ◽  
Author(s):  
Ronald C. Gehringer ◽  
Gregory J. McCarthy ◽  
R.G. Garvey ◽  
Deane K. Smith
Keyword(s):  
Phase Analysis ◽  
Solid Solutions ◽  
Inorganic Materials ◽  
Quantitative Phase Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Parameters ◽  
Qualitative And Quantitative ◽  
Quantitative Analyses ◽  
End Members

Solid solutions are pervasive in minerals and in industrial inorganic materials. The analyst is often called upon to provide qualitative and quantitative X-ray phase analysis for specimens containing solid solutions when all that is available are Powder Diffraction File (PDF) data or commercial standards for the end members. In an earlier paper (1) we presented several examples of substantial errors in accuracy of quantitative analysis that can arise when the crystallinity and composition of the analyte standard do not match those of the analyte in the sample of interest. We recommended that to obtain more accurate quantitative analyses, one should determine the analyte composition (e.g., from XRF on grains seen in a SEM or from comparison of cell parameters with those of the end members) and synthesize an analyte standard with this composition and with a crystallinity approximating that of the analyte (e.g., as determined from peak breadth or α1/ α2 splitting).

Characteristics of Sulfur in OMVPE Grown Indium Phosphide

1990 ◽  
Vol 204 ◽  
Author(s):  
S.D. Tyagi ◽  
H. Ehsani ◽  
S.K. Ghandhi
Keyword(s):  
Hydrogen Sulfide ◽  
Indium Phosphide ◽  
Carrier Concentration ◽  
Rapid Decrease ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Linear Region ◽  
Double Crystal ◽  
X Ray ◽  
Partial Pressures

ABSTRACTDoping of indium phosphide, grown by organometallic vapor phase epitaxy (OMVPE), has been carried out using hydrogen sulfide. For low partial pressures of H2S, the carrier concentration in the epitaxial layers is found to increase linearly. However, for higher partial pressures a region of superlinear doping is seen. For still higher partial pressures, a rapid decrease in carrier concentration is seen. In the linear region, the doping has a weak dependence on phosphine pressure, however, peak carrier concentration is higher for lower phosphine pressures.The layers were studied using Hall Effect and Double Crystal X-Ray Diffraction, in order to elucidate the nature of impurities and compensating centers introduced. A model which explains the above characteristics is proposed for S incorporation in MOVPE grown InP.

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