Characteristics of Sulfur in OMVPE Grown Indium Phosphide

1990 ◽  
Vol 204 ◽  
Author(s):  
S.D. Tyagi ◽  
H. Ehsani ◽  
S.K. Ghandhi
Keyword(s):  
Hydrogen Sulfide ◽  
Indium Phosphide ◽  
Carrier Concentration ◽  
Rapid Decrease ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Linear Region ◽  
Double Crystal ◽  
X Ray ◽  
Partial Pressures

ABSTRACTDoping of indium phosphide, grown by organometallic vapor phase epitaxy (OMVPE), has been carried out using hydrogen sulfide. For low partial pressures of H2S, the carrier concentration in the epitaxial layers is found to increase linearly. However, for higher partial pressures a region of superlinear doping is seen. For still higher partial pressures, a rapid decrease in carrier concentration is seen. In the linear region, the doping has a weak dependence on phosphine pressure, however, peak carrier concentration is higher for lower phosphine pressures.The layers were studied using Hall Effect and Double Crystal X-Ray Diffraction, in order to elucidate the nature of impurities and compensating centers introduced. A model which explains the above characteristics is proposed for S incorporation in MOVPE grown InP.

GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

1990 ◽  
Vol 216 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
B. F. Levine ◽  
S. J. Pearton ◽  
V. Swaminathan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrochemical Capacitance ◽  
Double Crystal ◽  
X Ray ◽  
Quantum Well Infrared Photodetectors ◽  
Capacitance Voltage

ABSTRACTWe have grown, fabricated, and measured GaAs quantum well infrared photodetectors (QWIPs) using organometallic vapor phase epitaxy (OMVPE). The epitaxial layers were characterized by electrochemical capacitance-voltage profiling, double-crystal X-ray diffraction, cathodoluminescence, and infrared absorption. Dark current, responsivity spectra, and detectivity were measured for the QWIP devices. The performance of these QWIPs was comparable to detectors grown using MBE. This is of importance since OMVPE has advantages for wafer throughout and cost.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Double-Crystal x-Ray Diffraction Study on Ta/Al Multilayers

1992 ◽  
Vol 9 (11) ◽  
pp. 605-608
Author(s):  
Xiu Lisong ◽  
Yuan Xiangyang ◽  
Wu Ziqin ◽  
Jiang Shusheng ◽  
Hu An ◽  
...  
Keyword(s):  
Diffraction Study ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray

Study of various types of diamonds by measurements of double crystal x‐ray diffraction and positron annihilation

1995 ◽  
Vol 78 (3) ◽  
pp. 1510-1513 ◽  
Author(s):  
S. Fujii ◽  
Y. Nishibayashi ◽  
S. Shikata ◽  
A. Uedono ◽  
S. Tanigawa
Keyword(s):  
Positron Annihilation ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray

Strain relaxation studied by photoluminescence and by double crystal X-ray diffraction measurements in strained InGaAs

1994 ◽  
Vol 22 (2-3) ◽  
pp. 222-226 ◽  
Author(s):  
A. Tabata ◽  
T. Benyattou ◽  
G. Guillot ◽  
S.A. Clark ◽  
J.E. Macdonald ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray

An X-Ray Small-Angle Scattering Instrument

1967 ◽  
Vol 11 ◽  
pp. 332-338 ◽  
Author(s):  
Donald M. Koffman
Keyword(s):  
Small Angle ◽  
Scintillation Counter ◽  
Small Angle Scattering ◽  
High Angular Resolution ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Angle Scattering ◽  
Diffraction Patterns

AbstractAn X-ray small-angle scattering instrument is described which is used for recording X-ray diffraction patterns or small-angle X-ray scattering curves in an angular region very close to the direct beam. The measurement of X-ray intensity is accomplished with standard geiger or scintillation counter techniques. The instrument is designed for use with a spot-focus or vertical-line X-ray source, In essence, it is a multiple-reflection double-crystal diffractometer, based on a concept developed by Bonse and Hart, employing two grooved perfect germanium crystals arranged in the parallel position. Multiple diffraction from these crystals produces a monochromated X-ray beam which can be several millimeters wide while still exhibiting extremely high angular resolution. As a result, effective sample volumes can be employed with maximum volume-to-thickness ratios. The principal features of the instrument are discussed with emphasis on the advantages of this device over those employing complex slit systems and film-re cording techniques, Data are presented to illustrate the operation, intensity, and resolution of the unit.

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