ChemInform Abstract: KINETICS OF SILICON GROWTH UNDER LOW HYDROGEN PRESSURE

1978 ◽  
Vol 9 (30) ◽  
Author(s):  
M. J.-P. DUCHEMIN ◽  
M. M. BONNET ◽  
M. F. KOELSCH
Keyword(s):  
Hydrogen Pressure ◽  
Silicon Growth ◽  
Kinetics Of

Kinetics of Silicon Growth under Low Hydrogen Pressure

1978 ◽  
Vol 125 (4) ◽  
pp. 637-644 ◽  
Author(s):  
M. Jean‐Pascal Duchemin ◽  
M. Michel Bonnet ◽  
M. François Koelsch
Keyword(s):  
Hydrogen Pressure ◽  
Silicon Growth ◽  
Kinetics Of

The effect of hydrogen pressure on the kinetics of the HDDR-process of bulk Nd-Fe-B-type alloys

1994 ◽  
Vol 30 (2) ◽  
pp. 642-644 ◽  
Author(s):  
O. Gutfleisch ◽  
C. Short ◽  
M. Verdier ◽  
I.R. Harris
Keyword(s):  
Hydrogen Pressure ◽  
Kinetics Of

Bombardment by Reflection - A Novel Method to Prepare High Quality Hydrogenated Amorphous Germanium by Anodic PCVD

1997 ◽  
Vol 467 ◽  
Author(s):  
Annette Diez ◽  
Twlo P. Drüsedau
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Mobility ◽  
Hydrogen Pressure ◽  
Amorphous Germanium ◽  
Hydrogen Dilution ◽  
Novel Method ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium ◽  
Kinetics Of

ABSTRACTDeposition of amorphous germanium by anodic PCVD was performed changing the germane/hydrogen dilution ratio from 1/6 to 1/100. Films deposited under high dilution of germane are of a high mechanical density (92.5 % of bulk) and good optoelectronic properties (electrical conductivity at room temperature σ=10−5 (Ω cm)−1, majority carrier mobility-lifetime product at λ=1200 nm ημ=x 10−7 cm2/V). The quality of the films is increased by deposition at increasing pumping speed for hydrogen (lower hydrogen pressure) keeping the other parameters constant. It is suggested that fast atomic hydrogen originating from a backscattering process at the powered electrode bombard the growing film and contribute to the improved quality of the a-Ge:H. Also, the growth kinetics of the films is changed from linear to parabolic dependence on germane flow interchanging deposition from high to low hydrogen pressure. This effect is rationalized in terms of a contribution of energetic atomic hydrogen to the dissociation of germane.

Growth and Doping Kinetics of GexSil-x Structures by Limited Reaction Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
P.M. Garone ◽  
J.C. Sturm ◽  
P.V. Schwartz ◽  
S.A. Schwarz ◽  
B. Wilkens
Keyword(s):  
Growth Rate ◽  
Boron Doping ◽  
Epitaxial Films ◽  
Growth Regime ◽  
Simple Kinetic Model ◽  
Silicon Growth ◽  
High Concentrations ◽  
Reaction Processing ◽  
Kinetics Of ◽  
Growth Experiments

ABSTRACTWe have investigated the growth rate and boron doping of Sil-xGex epitaxial films grown by Limited Reaction Processing The growth experiments were carried out at a pressure of 6.0 torr with growth temperatures ranging from 625°C to 1000°C. The growth rate increases rapidly upon the additon of a small germane flow to the dichlorosilane in the reaction-rate-limited growth regime, and can not be explained simply by germanium incorporation. The presence of germane can increase the silicon growth rate by up to a factor of one hundred. Boron doping was also studied at high concentrations of boron in Si and Sil-xGex epitaxial films as a function of diborane flow and growth rate supports a simple kinetic model rather than an equilibrium model.

Sign in / Sign up

Export Citation Format

Share Document