Growth and Doping Kinetics of GexSil-x Structures by Limited Reaction Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
P.M. Garone ◽  
J.C. Sturm ◽  
P.V. Schwartz ◽  
S.A. Schwarz ◽  
B. Wilkens
Keyword(s):  
Growth Rate ◽  
Boron Doping ◽  
Epitaxial Films ◽  
Growth Regime ◽  
Simple Kinetic Model ◽  
Silicon Growth ◽  
High Concentrations ◽  
Reaction Processing ◽  
Kinetics Of ◽  
Growth Experiments

ABSTRACTWe have investigated the growth rate and boron doping of Sil-xGex epitaxial films grown by Limited Reaction Processing The growth experiments were carried out at a pressure of 6.0 torr with growth temperatures ranging from 625°C to 1000°C. The growth rate increases rapidly upon the additon of a small germane flow to the dichlorosilane in the reaction-rate-limited growth regime, and can not be explained simply by germanium incorporation. The presence of germane can increase the silicon growth rate by up to a factor of one hundred. Boron doping was also studied at high concentrations of boron in Si and Sil-xGex epitaxial films as a function of diborane flow and growth rate supports a simple kinetic model rather than an equilibrium model.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Effect of caffeine on the growth and photosynthetic efficiency of marine macroalgae

2021 ◽  
Vol 64 (1) ◽  
pp. 13-18
Author(s):  
Ira Gray ◽  
Lindsay A. Green-Gavrielidis ◽  
Carol Thornber
Keyword(s):  
Growth Rate ◽  
Photosynthetic Efficiency ◽  
Sublethal Effects ◽  
Marine Species ◽  
Marine Organisms ◽  
Marine Macroalgae ◽  
Chondrus Crispus ◽  
Coastal Environments ◽  
Codium Fragile ◽  
High Concentrations

Abstract Caffeine is present in coastal environments worldwide and there is a need to assess its impact on marine organisms. Here, we exposed two species of ecologically important marine macroalgae (Chondrus crispus and Codium fragile subsp. fragile) to a suite of caffeine concentrations and measured their response. Caffeine concentrations of 10–100 ng L−1 had no significant effect on the growth rate or photosynthetic efficiency of either algae. Extremely high concentrations (100–200 mg L−1), which may occur acutely, produced sublethal effects for both species and mortality in C. fragile subsp. fragile. Our results highlight the need to understand how caffeine impacts marine species.

Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Crystal-growth kinetics of protein single crystals along capillary tubes in the gel-acupuncture technique

1999 ◽  
Vol 55 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Abel Moreno ◽  
Manuel Soriano-García
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Capillary Tube ◽  
Crystal Growth Rate ◽  
Equilibrium Studies ◽  
Acta Cryst ◽  
Average Growth ◽  
X Ray Crystallography ◽  
Growing Cell ◽  
Kinetics Of

In attempts to obtain protein crystals of a sufficient size for structural studies, lack of knowledge of the physicochemical properties of protein solutions and of their crystal-growth behaviour lead to a bottleneck for drug design as well as for X-ray crystallography. Most formal investigations on crystal-growth phenomena have been focused on equilibrium studies, where the protein is soluble, and on the kinetics of crystal growth, which is related to both nucleation and crystal-growth phenomena. The aim of this work is to measure the crystal-growth rate along a capillary tube used as a growing cell. These experiments were carried out using the gel-acupuncture technique [García-Ruiz et al. (1993). Mater. Res. Bull. 28, 541–546; García-Ruiz & Moreno (1994). Acta Cryst. D50, 484–490; García-Ruiz & Moreno (1997). J. Cryst. Growth, 178, 393–401]. Crystal-growth investigations took place using lysozyme and thaumatin I as standard proteins. The maximum average growth rate obtained in the lower part of the capillary tube was about 35 Å s−1 and the minimum average growing rate in the upper part of the capillary tube was about 8 Å s−1. The crystal-growth rate as a function of the supersaturation was experimentally estimated at a constant height along the capillary tube.

scholarly journals Desensitization Contributes to the Synaptic Response of Gain-of-Function Mutants of the Muscle Nicotinic Receptor

2006 ◽  
Vol 128 (5) ◽  
pp. 615-627 ◽  
Author(s):  
Sergio Elenes ◽  
Ying Ni ◽  
Gisela D. Cymes ◽  
Claudio Grosman
Keyword(s):  
Nicotinic Receptor ◽  
Dissociation Rate ◽  
Gain Of Function ◽  
Naturally Occurring ◽  
Channel Opening ◽  
Speed Up ◽  
High Concentrations ◽  
Dissociation Rate Constants ◽  
Kinetics Of ◽  
Peak Value

Although the muscle nicotinic receptor (AChR) desensitizes almost completely in the steady presence of high concentrations of acetylcholine (ACh), it is well established that AChRs do not accumulate in desensitized states under normal physiological conditions of neurotransmitter release and clearance. Quantitative considerations in the framework of plausible kinetic schemes, however, lead us to predict that mutations that speed up channel opening, slow down channel closure, and/or slow down the dissociation of neurotransmitter (i.e., gain-of-function mutations) increase the extent to which AChRs desensitize upon ACh removal. In this paper, we confirm this prediction by applying high-frequency trains of brief (∼1 ms) ACh pulses to outside-out membrane patches expressing either lab-engineered or naturally occurring (disease-causing) gain-of-function mutants. Entry into desensitization was evident in our experiments as a frequency-dependent depression in the peak value of succesive macroscopic current responses, in a manner that is remarkably consistent with the theoretical expectation. We conclude that the comparatively small depression of the macroscopic currents observed upon repetitive stimulation of the wild-type AChR is due, not to desensitization being exceedingly slow but, rather, to the particular balance between gating, entry into desensitization, and ACh dissociation rate constants. Disruption of this fine balance by, for example, mutations can lead to enhanced desensitization even if the kinetics of entry into, and recovery from, desensitization themselves are not affected. It follows that accounting for the (usually overlooked) desensitization phenomenon is essential for the correct interpretation of mutagenesis-driven structure–function relationships and for the understanding of pathological synaptic transmission at the vertebrate neuromuscular junction.

Correlations for Interaction Layer Growth in U-Mo/Al Dispersion Fuels

2017 ◽  
Vol 375 ◽  
pp. 29-39
Author(s):  
Boris A. Tarasov ◽  
Stepan N. Nikitin ◽  
Dmitry P. Shornikov ◽  
Maria S. Tarasova ◽  
Igor I. Konovalov
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Aluminum Matrix ◽  
Layer Growth ◽  
Radiation Diffusion ◽  
Fission Rate ◽  
Interaction Layer ◽  
The Matrix ◽  
Mechanism And Kinetics ◽  
Kinetics Of

Paper presents the results of the growth rate of the interaction layer of uranium-molybdenum dispersed fuel in aluminum matrix and influence of silicon alloying on it. The growth process of amorphous interaction layer depends on the radiation diffusion which is proportional to the fission rate in the power of 1⁄4. The alloying of the matrix by silicon does not lead to a change in the mechanism and kinetics of the interaction layer growth, but only slows it down.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

scholarly journals Evaluation of the kinetics of oxidation and removal of organic matter in the self-purification of a mountain river

DYNA ◽  
2015 ◽  
Vol 82 (191) ◽  
pp. 183-193 ◽  
Author(s):  
Jorge Virgilio Rivera Gutiérrez
Keyword(s):  
Water Quality ◽  
Water System ◽  
The Self ◽  
Organic Load ◽  
Mountain River ◽  
Kinetics Of Oxidation ◽  
Kinetic Rates ◽  
High Concentrations ◽  
Kinetics Of

The study is based on the determination of the kinetic rates and assessment of self-purification of the Frio River, due to the uptake of organic load. The kinetic rates were calculated by applying differential and logarithmic methods on concentrations of water quality determinants present in each of the (7) reach of the river. The water system easily recovers the amount of oxygen, k<sub>d</sub>= 0.4, k<sub>a</sub> 3.2 d<sup>-1</sup>, only receives 27.7 Ton. d<sup>-1</sup>, the organic load, making high concentrations of carbon, ammonium and remain sediment. The length Influence of discharges, LIV- BOD yielded a mean per tranche of 10 km, compared to 3 km each way, means that the river can´t self- purification that need more length of travel. The study illustrates the modeling of the determinants of quality, developed by the QUAL2K, using the calculated rates.

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