Photogenerated Neutral Nitrogen Radical Catalyzed Bifunctionalization of Alkenes

2019 ◽  
Vol 25 (34) ◽  
pp. 8024-8029 ◽  
Author(s):  
Quan‐Qing Zhao ◽  
Jun Chen ◽  
Xue‐Song Zhou ◽  
Xiao‐Ye Yu ◽  
Jia‐Rong Chen ◽  
...  
Keyword(s):  
Nitrogen Radical

A Sterically Hindered Derivative of 2,1,3‐Benzotelluradiazole: A Way to the First Structurally Characterised Monomeric Tellurium–Nitrogen Radical Anion

2020 ◽  
Vol 26 (64) ◽  
pp. 14688-14699
Author(s):  
Pavel A. Petrov ◽  
Evgeny M. Kadilenko ◽  
Taisiya S. Sukhikh ◽  
Ilia V. Eltsov ◽  
Artem L. Gushchin ◽  
...  
Keyword(s):  
Radical Anion ◽  
Sterically Hindered ◽  
Nitrogen Radical

Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs

2003 ◽  
Vol 433-436 ◽  
pp. 945-948
Author(s):  
Hiroshi Yano ◽  
Yusuke Maeyama ◽  
Y. Furumoto ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Nitrogen Radical

Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl2 Molecular Beam

1990 ◽  
Vol 201 ◽  
Author(s):  
T. Ono ◽  
S. Hiraoka ◽  
K. Suzuki
Keyword(s):  
Etch Rate ◽  
Molecular Beam ◽  
Anisotropic Etching ◽  
Free Jet ◽  
Etching Condition ◽  
Heavily Doped ◽  
Nitrogen Radical

AbstractAnisotropic etching of n+ poly-Si is achieved using a hot Cl2 molecular beam and a sidewall protection technique. A hot molecular beam is produced by a free jet expansion of a gas heated in a furnace. A nitrogen radical beam is used to prevent the sidewall etching. The etch rate of n+ poly-Si is 4.3 nm/min at the anisotropic etching condition.

scholarly journals Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering

2004 ◽  
Vol 85 (14) ◽  
pp. 2803-2805 ◽  
Author(s):  
T. Katsuno ◽  
S. Nitta ◽  
H. Habuchi ◽  
V. Stolojan ◽  
S. R. P. Silva
Keyword(s):  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Amorphous Carbon Nitride ◽  
Cyclic Nitrogen ◽  
Nitrogen Radical

scholarly journals Direct C(sp2)–H amination of aryl aldehyde-derived hydrazones via visible light promoted photoredox catalysis

RSC Advances ◽  
2017 ◽  
Vol 7 (40) ◽  
pp. 25171-25174 ◽  
Author(s):  
Xin Zhu ◽  
Zhi He ◽  
Qiu-Yan Li ◽  
Xiao-Jun Wang
Keyword(s):  
Visible Light ◽  
Photoredox Catalysis ◽  
Aryl Aldehyde ◽  
Nitrogen Radical

An unprecedented visible-light-induced direct C(sp2)–H amination of aryl aldehyde-derived hydrazones was developed by using N-acyloxyphthalimides as nitrogen-radical precursors.

Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique

MRS Advances ◽  
2018 ◽  
Vol 3 (3) ◽  
pp. 165-170
Author(s):  
Shumpei Ogawa ◽  
Tatsuya Kuroda ◽  
Ryuga Koike ◽  
Hiroki Ishizaki
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Atomic Layer ◽  
Plasma Power ◽  
Gas Flow Rate ◽  
Nitrogen Gas ◽  
Nitrogen Radical ◽  
Atomic Layer Deposition Technique

AbstractRecently, Plasma Assisted Atomic Layer Deposition Technique will easily control the thickness and the composition of semiconductor films. The radical generated by using the plasma techniques, gave the decrease of the defect into the semiconductor films. In this investigation, the relationship between microwave plasma power, nitrogen gas flow rate and concentration of generated nitrogen radical, was evaluated. At the first, Plasma emission spectrum at microwave plasma power (0 to 400W) was measured using a mixed 200sccm argon gas and 10sccm nitrogen gas. Next, the plasma emission spectrum was measured in the mixing of nitrogen gas flow rate (0 to 40sccm) with 200sccm argon gas flow rate. At that time, the microwave plasma power was set to 200W. Nitrogen radical spectrum were identified from all the emission spectrum, and the nitrogen radical intensity was calculated. As a result, the nitrogen radical intensity became the largest at 200sccm argon gas flow rate and 10sccm nitrogen gas flow rate. In addition, the nitrogen radical intensity increased in proportion to the microwave plasma power. The concentration of generated nitrogen radical could be controlled by changing the microwave plasma power and the nitrogen gas flow rate. Mentioned above, nitride thin films will be obtained on Si Substrates by microwave generated remote plasma assisted atomic layer deposition technique.

Sequential Activation Process of oxygen RIE and nitrogen Radical for LiTaO3 and Si Wafer Bonding

2019 ◽  
Vol 3 (6) ◽  
pp. 91-98 ◽  
Author(s):  
Yoshikaju Zikuhara ◽  
Eiji Higurashi ◽  
Noboru Tamura ◽  
T. Suga
Keyword(s):  
Wafer Bonding ◽  
Activation Process ◽  
Sequential Activation ◽  
Nitrogen Radical ◽  
Si Wafer
Sign in / Sign up

Export Citation Format

Share Document