Sequential Activation Process of oxygen RIE and nitrogen Radical for LiTaO3 and Si Wafer Bonding

2019 ◽  
Vol 3 (6) ◽  
pp. 91-98 ◽  
Author(s):  
Yoshikaju Zikuhara ◽  
Eiji Higurashi ◽  
Noboru Tamura ◽  
T. Suga
Keyword(s):  
Wafer Bonding ◽  
Activation Process ◽  
Sequential Activation ◽  
Nitrogen Radical ◽  
Si Wafer

Study on Crystallization Mechanism of GeSn Interlayer for Low Temperature Ge/Si Bonding

2021 ◽  
Author(s):  
Ziwei Wang ◽  
Ziqi Zhang ◽  
Donglin Huang ◽  
Shaoying Ke ◽  
Zongpei Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Wafer Bonding ◽  
Photonic Integrated Circuits ◽  
High Strength ◽  
Activation Process ◽  
Low Temperature Bonding ◽  
Gesn Alloy ◽  
Interlayer Bonding ◽  
Si Wafer

Abstract Low temperature bonding technologies is necessary in next-generation photonic integrated circuits, such as flexible optoelectronic devices, low dark current Ge/Si devices and so on. Since Germanium-Tin (GeSn) alloy has lower crystallization temperature, in this work, amorphous GeSn with 5% Sn alloy by magnetron sputtering is introduced as an intermediate layer for wafer bonding innovatively. And high strength Ge/Si heterojunction with a crystal GeSn layer is realized without any surface activation process. Two mechanisms in the interlayer crystallization are put forward and substantiated experimentally and theoretically: 1) the a-GeSn turns to be poly-GeSn due to the induction of the c-Ge substrate. 2) Stress between Si wafer and interlayer due to thermal mismatch contributes to the crystallization. It is concluded that GeSn semiconductor interlayer bonding would be one of the potential technologies for bonding process.

Chemical Mechanical Planarization Technology for Si Wafer Bonding

2019 ◽  
Vol 33 (10) ◽  
pp. 153-156
Author(s):  
JongHeun Lim ◽  
BoUn Yoon ◽  
KyungHyun Kim ◽  
YoungSun Ko ◽  
ChangJin Kang
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Planarization ◽  
Si Wafer

Low-temperature Au–Si wafer bonding

2010 ◽  
Vol 20 (9) ◽  
pp. 095014 ◽  
Author(s):  
Errong Jing ◽  
Bin Xiong ◽  
Yuelin Wang
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Si Wafer

Effects of Wet Activation Process Parameters on Surface Hydrophilicity in Silicon Direct Wafer Bonding

2012 ◽  
Vol 235 ◽  
pp. 250-253
Author(s):  
Lei Nie ◽  
Jun Xing Yu ◽  
Kun Zhang
Keyword(s):  
Wafer Bonding ◽  
Orthogonal Experiment ◽  
Volume Ratio ◽  
Holding Time ◽  
Activation Process ◽  
Analysis Method ◽  
Range Analysis ◽  
Surface Hydrophilicity ◽  
Direct Wafer Bonding ◽  
Value Range

Wet activation is a very important step in silicon direct wafer bonding process and a optimized activation process is desirable to improve the surface hydrophilicity. Therefore the pivotal parameters of activation process were investigated which were volume ratio, holding time and treat temperature. A orthogonal experiment array was designed to reveal the effects of these parameters and the experiment results were analyzed by range analysis method. The analysis results indicted among those three parameters, everyone had intimidate relationship with surface hydrophilicity, which was indexed by contact angle. And higher concentration, longer holding time and higher treating temperature in possible value range were more desirable. Based on these conclusions, optimized activation process was desigened using which void-free bonding was realized.

Photoelectroscopic Study of Mn Barrier Layer on SiO2 for Si Wafer Bonding Process

2019 ◽  
Author(s):  
Takahiro Nagata ◽  
Kazumichi Tsumura ◽  
Kenro Nakamura ◽  
Kengo Uchida ◽  
Jin Kawakita ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Si Wafer

A study of Si wafer bonding via methanol capillarity

2003 ◽  
Vol 77 (3) ◽  
pp. 751-754 ◽  
Author(s):  
C.F Jerez-Hanckes ◽  
D Qiao ◽  
S.S Lau
Keyword(s):  
Wafer Bonding ◽  
Si Wafer

scholarly journals Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al2O3-Intermediated InP (Die)-to-Si (Wafer) Bonding

2015 ◽  
Vol 5 (2) ◽  
pp. P117-P123
Author(s):  
Yiding Lin ◽  
P. Anantha ◽  
Kwang Hong Lee ◽  
Shen Lin Chua ◽  
Lingru Shang ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Stress Analysis ◽  
Wafer Bonding ◽  
Thermal Stress Analysis ◽  
Si Wafer
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