Tin-Tin Dioxide@Hollow Carbon Nanospheres Synthesized by Aerosol Catalytic Chemical Vapor Deposition for High-Density Lithium Storage

ChemCatChem ◽  
2014 ◽  
Vol 6 (6) ◽  
pp. 1567-1569 ◽  
Author(s):  
Jeong Hoon Byeon ◽  
Young-Woo Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Tin Dioxide ◽  
Chemical Vapor ◽  
High Density ◽  
Carbon Nanospheres ◽  
Lithium Storage ◽  
Catalytic Chemical Vapor Deposition ◽  
Hollow Carbon

CVD-assisted fabrication of hierarchical microparticulate Li2TiSiO5-carbon nanospheres for ultrafast lithium storage

Nanoscale ◽  
2020 ◽  
Vol 12 (26) ◽  
pp. 13918-13925 ◽  
Author(s):  
Dejia Kong ◽  
Li Shen ◽  
Runwei Mo ◽  
Jiaxu Liu ◽  
Ran Tao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rate Capability ◽  
Chemical Vapor ◽  
Composite Anode ◽  
Carbon Nanospheres ◽  
Lithium Storage ◽  
High Quality

Introducing a high-quality carbonaceous coating on microparticulate Li2TiSiO5 (LTSO) by chemical vapor deposition (CVD) yields a practical composite anode (LTSO/C) with graphite-like capacity and Li4Ti5O12-like rate capability.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

The Effect of Catalyst on Carbon Nanotubes (CNTs) Synthesized by Catalytic Chemical Vapor Deposition (CVD) Technique

2011 ◽  
Vol 364 ◽  
pp. 232-237 ◽  
Author(s):  
S.Y. Lim ◽  
M.M. Norani
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Time ◽  
Catalytic Chemical Vapor Deposition ◽  
Catalyst Pretreatment ◽  
Diameter Range

Catalyst plays a crucial role in determining the characteristics of carbon nanotubes (CNTs) produced by using thermal catalytic chemical vapor deposition (CVD). It is essential to investigate how the catalyst preparation affects the characteristics of CNTs because certain application demands specific size for optimum performance. This study reports the effect of the types of catalyst and the duration of the catalyst pre-treatment (wet etching time, dry etching time and ball milling) on the diameter of CNTs. The synthesized CNTs samples were characterized by scanning and transmission electron microscopy and Raman spectroscopy. Wet etching (2M hydrofluoric acid) time was varied from 1 to 2.5 hrs and the diameter range was found to be in the range of 23 to 52 nm. The diameter range for CNTs produced for 3 hrs and 5 hrs of dry etching treatment (with ammonia gas) are 38 to 51 nm and 23 to 48 nm, respectively. The diameter size of CNTs produced using Ni (14 to 25 nm) was found to be smaller than Fe (38 to 51 nm). There is a significant decrease in the diameter of CNTs by prolonging the wet etching period. Shorter and curly shaped CNTs can also be obtained by using Ni as the catalyst. Keywords: chemical vapor deposition, carbon nanotubes, catalyst pretreatment

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