Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1,3-Disilacyclobutane

2015 ◽  
Vol 119 (33) ◽  
pp. 19134-19142 ◽  
Author(s):  
I. Badran ◽  
W. H. Kan ◽  
Y. J. Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Changes ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition

Structural changes in carbon produced by a sulfur-aided catalytic chemical vapor deposition

Carbon ◽  
2009 ◽  
Vol 47 (8) ◽  
pp. 2143
Author(s):  
Hai-Long Ma ◽  
Ying-Yong Wang ◽  
Guo-Qiang Jin ◽  
Xiang-Yun Guo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Changes ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

The Effect of Catalyst on Carbon Nanotubes (CNTs) Synthesized by Catalytic Chemical Vapor Deposition (CVD) Technique

2011 ◽  
Vol 364 ◽  
pp. 232-237 ◽  
Author(s):  
S.Y. Lim ◽  
M.M. Norani
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Time ◽  
Catalytic Chemical Vapor Deposition ◽  
Catalyst Pretreatment ◽  
Diameter Range

Catalyst plays a crucial role in determining the characteristics of carbon nanotubes (CNTs) produced by using thermal catalytic chemical vapor deposition (CVD). It is essential to investigate how the catalyst preparation affects the characteristics of CNTs because certain application demands specific size for optimum performance. This study reports the effect of the types of catalyst and the duration of the catalyst pre-treatment (wet etching time, dry etching time and ball milling) on the diameter of CNTs. The synthesized CNTs samples were characterized by scanning and transmission electron microscopy and Raman spectroscopy. Wet etching (2M hydrofluoric acid) time was varied from 1 to 2.5 hrs and the diameter range was found to be in the range of 23 to 52 nm. The diameter range for CNTs produced for 3 hrs and 5 hrs of dry etching treatment (with ammonia gas) are 38 to 51 nm and 23 to 48 nm, respectively. The diameter size of CNTs produced using Ni (14 to 25 nm) was found to be smaller than Fe (38 to 51 nm). There is a significant decrease in the diameter of CNTs by prolonging the wet etching period. Shorter and curly shaped CNTs can also be obtained by using Ni as the catalyst. Keywords: chemical vapor deposition, carbon nanotubes, catalyst pretreatment

Ti3C2MXenes modified with in situ grown carbon nanotubes for enhanced electromagnetic wave absorption properties

2017 ◽  
Vol 5 (16) ◽  
pp. 4068-4074 ◽  
Author(s):  
Xinliang Li ◽  
Xiaowei Yin ◽  
Meikang Han ◽  
Changqing Song ◽  
Hailong Xu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electromagnetic Wave ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Properties ◽  
Electromagnetic Wave Absorption ◽  
Catalytic Chemical Vapor Deposition ◽  
Wave Absorption

Ti3C2TxMXenes modified within situgrown carbon nanotubes (CNTs) are fabricatedviaa simple catalytic chemical vapor deposition (CVD) process.

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Vertically aligned growth of small-diameter single-walled carbon nanotubes on flexible stainless steels by alcohol catalytic chemical vapor deposition with Ir catalyst on alumina buffer layer

2021 ◽  
Author(s):  
Shu KONDO ◽  
Daiki YAMAMOTO ◽  
Kamal Prasad Prasad Sharma ◽  
Yazid Yaakob ◽  
Takahiro SAIDA ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Small Diameter ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Chemical Vapor Deposition Growth ◽  
Catalytic Chemical Vapor Deposition ◽  
Single Walled Carbon ◽  
Vertically Aligned

Abstract We performed single-walled carbon nanotube (SWCNT) growth on flexible stainless-steel foils by applying alcohol catalytic chemical vapor deposition using an Ir catalyst with an alumina buffer layer. When the alumina thickness was 90 nm, vertically aligned SWCNTs with a thickness of 4.6 m were grown. In addition, Raman results showed that the diameters of most SWCNTs were distributed below 1.1 nm. Compared with conventional chemical vapor deposition growth where Si wafers are used as substrates, this method is more cost effective and easier to extend for mass production of small-diameter SWCNTs.

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