Characterization of TAP Ambr 250 disposable bioreactors, as a reliable scale-down model for biologics process development

2017 ◽  
Vol 33 (2) ◽  
pp. 478-489 ◽  
Author(s):  
Ping Xu ◽  
Colleen Clark ◽  
Todd Ryder ◽  
Colleen Sparks ◽  
Jiping Zhou ◽  
...  
Keyword(s):  
Process Development ◽  
Scale Down ◽  
Reliable Scale

scholarly journals Scale-down characterization of post-centrifuge flocculation processes for high-throughput process development

2014 ◽  
Vol 111 (12) ◽  
pp. 2486-2498 ◽  
Author(s):  
Georgina Espuny Garcia del Real ◽  
Jim Davies ◽  
Daniel G. Bracewell
Keyword(s):  
High Throughput ◽  
Process Development ◽  
Scale Down

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

1996 ◽  
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn
Keyword(s):  
Process Development ◽  
Process Integration ◽  
Wafer Level ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Integration Approach ◽  
Intermetal Dielectric ◽  
Metallization Process ◽  
Section Analysis

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.

scholarly journals Investigation of a plain ball burnishing process on differently machined Aluminium EN AW 2007 surfaces

2018 ◽  
Vol 190 ◽  
pp. 11005 ◽  
Author(s):  
Marco Posdzich ◽  
Rico Stöckmann ◽  
Florian Morczinek ◽  
Matthias Putz
Keyword(s):  
Surface Roughness ◽  
Process Parameters ◽  
Process Development ◽  
Fem Simulation ◽  
Initial Surface ◽  
Shape Deviation ◽  
Finishing Process ◽  
Path Distance ◽  
Burnishing Process

Burnishing is an effective chipless finishing process for improving workpiece properties: hardness, vibration resistance and surface quality. The application of this technology is limited to rotationally symmetrical structures of deformable metals. Because of the multiaxial characteristics, the transfer of this force controlled technology on to prismatic shapes requires a comprehensive process development. The main purpose of this paper is the characterization of a plain burnishing process on aluminium EN AW 2007 with a linear moved, spherical diamond tool. The method of design of experiments was used to investigate the influence of different machined surfaces in conjunction with process parameters: burnishing force, burnishing direction, path distance and burnishing speed. FEM simulation was utilized for strain and stress analysis. The experiments show, that unlike the process parameters the initial surface roughness as 3rd order shape deviation does not have a significant influence on the finished surface. Furthermore a completely new surface is created by the process, with properties independent from the initial surface roughness.

scholarly journals A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4163
Author(s):  
Avi Karsenty
Keyword(s):  
Hall Effect ◽  
High Speed ◽  
Review Paper ◽  
Process Development ◽  
Analytical Models ◽  
Nanoscale Devices ◽  
Comprehensive Review ◽  
Complex Design ◽  
Hall Effects

A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.

Process development and characterization of additively manufactured nickel–titanium shape memory parts

2016 ◽  
Vol 27 (19) ◽  
pp. 2653-2660 ◽  
Author(s):  
Jason M Walker ◽  
Christoph Haberland ◽  
Mohsen Taheri Andani ◽  
Haluk Ersin Karaca ◽  
David Dean ◽  
...  
Keyword(s):  
Shape Memory ◽  
Process Development ◽  
Nickel Titanium

Development of a Silicon Carbide Micro Four-Point Probe

2004 ◽  
Author(s):  
Arnab Choudhury ◽  
Peter J. Hesketh
Keyword(s):  
Silicon Carbide ◽  
Structural Material ◽  
Amorphous Silicon ◽  
Process Development ◽  
Film Resistance ◽  
Amorphous Silicon Carbide ◽  
Van Der Pauw ◽  
Square Array

The process development and fabrication of a cantilever-based micro four-point probe (MFPP) is presented. This device will allow for characterization of film resistance with micrometer-scaled resolution. The proble is designed for deployment on a commercial AFM. The cantilevers are made of amorphous silicon carbide (a-SiC) and the probe body using SU8. The probe consists of two sets of cantilevers, with integrated tips, on parallel planes 8.68 μm apart. This allows the probe to contact the surface in a square array and perform a van der Pauw type measurement. Studies to characterize, pattern and dope the a-SiC have been performed to utilize silicon carbide as both the cantilever structural material as well the conductive element in the sensor. The MFPP has been fabricated and some preliminary tests have been performed.

Process Development and Structural Characterization of an Anti-Notch 3 Antibody–Drug Conjugate

2018 ◽  
Vol 22 (3) ◽  
pp. 286-295 ◽  
Author(s):  
Durgesh V. Nadkarni ◽  
Qingping Jiang ◽  
Olga Friese ◽  
Nataliya Bazhina ◽  
He Meng ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Process Development ◽  
Antibody Drug Conjugate ◽  
Drug Conjugate ◽  
Notch 3 ◽  
Antibody Drug
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