High-T g porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

2018 ◽  
Vol 136 (14) ◽  
pp. 47313 ◽  
Author(s):  
Pengxia Lv ◽  
Zhixin Dong ◽  
Xuemin Dai ◽  
Xuepeng Qiu
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Polyimide Films ◽  
Low Dielectric

Novel soluble polyimides containing pyridine and fluorinated units: preparation, characterization, and optical and dielectric properties

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21662-21671 ◽  
Author(s):  
Weibing Dong ◽  
Yue Guan ◽  
Dejing Shang
Keyword(s):  
Dielectric Constant ◽  
Thermal Properties ◽  
Dielectric Properties ◽  
Low Dielectric Constant ◽  
Mechanical And Thermal Properties ◽  
Polyimide Films ◽  
Low Dielectric

To acquire low dielectric constant polyimide films with good mechanical and thermal properties and low CTE applied in microelectronic fields, three novel polyimides containing pyridine and –C(CF3)2– groups were firstly designed and synthesized.

Heat resistant polyimide films with low dielectric constant by vapor deposition polymerization

1997 ◽  
Vol 308-309 ◽  
pp. 475-479 ◽  
Author(s):  
Sadayuki Ukishima ◽  
Masayuki Iijima ◽  
Masatoshi Sato ◽  
Yoshikazu Takahashi ◽  
Eiichi Fukada
Keyword(s):  
Dielectric Constant ◽  
Vapor Deposition ◽  
Low Dielectric Constant ◽  
Polyimide Films ◽  
Heat Resistant ◽  
Low Dielectric

Highly transparent, strong, and flexible fluorographene/fluorinated polyimide nanocomposite films with low dielectric constant

2018 ◽  
Vol 6 (24) ◽  
pp. 6378-6384 ◽  
Author(s):  
Xiaodong Yin ◽  
Yiyu Feng ◽  
Qiang Zhao ◽  
Yu Li ◽  
Shuangwen Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Polyimide Films ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Polyimide Nanocomposite

Transparent and flexible fluorinated polyimide films with loading of well-dispersed fluorographene exhibit low dielectric constants.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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