Photoinduced Charge-Carrier Generation in Epitaxial MOF Thin Films: High Efficiency as a Result of an Indirect Electronic Band Gap?

2015 ◽  
Vol 54 (25) ◽  
pp. 7441-7445 ◽  
Author(s):  
Jinxuan Liu ◽  
Wencai Zhou ◽  
Jianxi Liu ◽  
Ian Howard ◽  
Goran Kilibarda ◽  
...  
2021 ◽  
Vol 125 (13) ◽  
pp. 7495-7501
Author(s):  
Gang Wang ◽  
Jinju Zheng ◽  
Boyi Xu ◽  
Chaonan Zhang ◽  
Yue Zhu ◽  
...  

2019 ◽  
Vol 3 (3) ◽  
Author(s):  
Hugo Henck ◽  
Debora Pierucci ◽  
Jihene Zribi ◽  
Federico Bisti ◽  
Evangelos Papalazarou ◽  
...  

1996 ◽  
Vol 198 (1) ◽  
pp. 81-86 ◽  
Author(s):  
F. Engelbrecht ◽  
J. Zeman ◽  
G. Wellenhofer ◽  
C. Peppermüller ◽  
R. Helbig ◽  
...  

2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).


2013 ◽  
Vol 117 (24) ◽  
pp. 12754-12761 ◽  
Author(s):  
Teak D. Boyko ◽  
Robert J. Green ◽  
Richard Dronskowski ◽  
Alexander Moewes

2020 ◽  
Vol 22 (21) ◽  
pp. 11936-11942
Author(s):  
Kangli Wang ◽  
Beate Paulus

Using the DFT-GW-BSE method, we analyze how the electronic band gap, optical absorption spectrum and exciton binding energy of the MoS2 monolayer are influenced by NO and C3H3N3 molecules and S-defects.


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