Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation

2021 ◽  
Vol 125 (13) ◽  
pp. 7495-7501
Author(s):  
Gang Wang ◽  
Jinju Zheng ◽  
Boyi Xu ◽  
Chaonan Zhang ◽  
Yue Zhu ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Band Gap ◽  
Band Edge ◽  
Electronic Band ◽  
Electronic Band Gap ◽  
P Type

scholarly journals Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

2019 ◽  
Vol 3 (3) ◽  
Author(s):  
Hugo Henck ◽  
Debora Pierucci ◽  
Jihene Zribi ◽  
Federico Bisti ◽  
Evangelos Papalazarou ◽  
...  
Keyword(s):  
Band Gap ◽  
Van Der Waals ◽  
Indium Selenide ◽  
Two Dimensional ◽  
Electronic Band ◽  
Electronic Band Gap

Pressure Dependence of the Electronic Band Gap in 6HSic

1996 ◽  
Vol 198 (1) ◽  
pp. 81-86 ◽  
Author(s):  
F. Engelbrecht ◽  
J. Zeman ◽  
G. Wellenhofer ◽  
C. Peppermüller ◽  
R. Helbig ◽  
...  
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Electronic Band ◽  
Electronic Band Gap

Electronic Band Gap Reduction in Manganese Carbodiimide: MnNCN

2013 ◽  
Vol 117 (24) ◽  
pp. 12754-12761 ◽  
Author(s):  
Teak D. Boyko ◽  
Robert J. Green ◽  
Richard Dronskowski ◽  
Alexander Moewes
Keyword(s):  
Band Gap ◽  
Electronic Band ◽  
Electronic Band Gap

Tuning the binding energy of excitons in the MoS2 monolayer by molecular functionalization and defective engineering

2020 ◽  
Vol 22 (21) ◽  
pp. 11936-11942
Author(s):  
Kangli Wang ◽  
Beate Paulus
Keyword(s):  
Absorption Spectrum ◽  
Binding Energy ◽  
Optical Absorption ◽  
Band Gap ◽  
Optical Absorption Spectrum ◽  
Exciton Binding Energy ◽  
Electronic Band ◽  
Mos2 Monolayer ◽  
Electronic Band Gap

Using the DFT-GW-BSE method, we analyze how the electronic band gap, optical absorption spectrum and exciton binding energy of the MoS2 monolayer are influenced by NO and C3H3N3 molecules and S-defects.

Paraffin-Enabled Compressive Folding of Two-Dimensional Materials with Controllable Broadening of the Electronic Band Gap

2021 ◽  
Vol 13 (34) ◽  
pp. 40922-40931
Author(s):  
Weifeng Zhang ◽  
Zihan Zhao ◽  
Yating Yang ◽  
Yan Zhang ◽  
He Hao ◽  
...  
Keyword(s):  
Band Gap ◽  
Two Dimensional ◽  
Electronic Band ◽  
Two Dimensional Materials ◽  
Electronic Band Gap

Mechanically changed band gap of single walled carbon nanotube: a third neighbor tight-binding approach

Open Physics ◽  
2010 ◽  
Vol 8 (3) ◽  
Author(s):  
Mehdi Pakkhesal ◽  
Rahim Ghayour
Keyword(s):  
Carbon Nanotube ◽  
Carbon Atom ◽  
Band Gap ◽  
Tight Binding ◽  
Electronic Band ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
The Third ◽  
Analytical Derivation ◽  
Electronic Band Gap

AbstractAnalytical derivation of electronic band gap of Single Walled Carbon Nanotube (SWCNT) under a small percent of uniaxial and torsional strains is in this paper. Our approach is based on a kind of π-Tight Binding (π-TB) approximation which includes interactions of the second and the third neighbors of each carbon atom in addition to the nearest ones. Implementing the approach of this paper, yields more precise results than those of other researches.

Origins of Electronic Band Gap Reduction inCr/NCodopedTiO2

2014 ◽  
Vol 112 (3) ◽  
Author(s):  
C. Parks Cheney ◽  
P. Vilmercati ◽  
E. W. Martin ◽  
M. Chiodi ◽  
L. Gavioli ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Band ◽  
Electronic Band Gap
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