scholarly journals Mg/W-codoped vanadium dioxide thin films with enhanced visible transmittance and low phase transition temperature

2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Charge Carrier ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Vanadium Dioxide ◽  
Visible Transmittance ◽  
Vanadium Dioxide Thin Films

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).

scholarly journals Modulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation

2017 ◽  
Vol 1 (6) ◽  
Author(s):  
S. Cervera ◽  
M. Trassinelli ◽  
M. Marangolo ◽  
C. Carrétéro ◽  
V. Garcia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
Ion Irradiation

Vanadium Dioxide Thin Films for Thermo-Optical Switching Applications

2003 ◽  
Vol 785 ◽  
Author(s):  
Lijun Jiang ◽  
William N. Carr
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Dioxide ◽  
Optical Switching ◽  
Abrupt Change ◽  
Metal Layer ◽  
Heating And Cooling ◽  
Optical Switching Devices ◽  
Lift Off ◽  
Vanadium Dioxide Thin Films

ABSTRACTVanadium dioxide (VO2) thin films were fabricated by e-beam evaporation of vanadium thin films followed by thermal oxidation in oxygen ambient. The properties of the VO2 films were investigated for thermo-optical switching applications. Synthesized VO2 film displays a phase transition at 65 – 68 °C. It exhibits an abrupt change in optical reflectivity over the phase transition temperature range. Results for VO2 on a highly reflective metal layer are strongly dependent on the VO2 thickness. The optical switching has a major hysteresis of about 15 °C between the heating and cooling branches. The evolution of the surface morphology with the oxidation time was studied with a SEM. The VO2 film was patterned on microplatforms by metal lift-off technique. We conclude that the evaporation followed by oxidation is an effective method to produce active VO2 film for thermo-optical switching devices.

Halogen substitution regulates the phase transition temperature and band gap of semiconductor compounds

2020 ◽  
Vol 56 (11) ◽  
pp. 1697-1700 ◽  
Author(s):  
Hui-Hui Li ◽  
Chang-Feng Wang ◽  
Ya-Xing Wu ◽  
Fan Jiang ◽  
Chao Shi ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Semiconductor Compounds ◽  
Semiconductor Properties

Halogen substitution creates a promising platform for designing and optimizing materials with a combination of attractive dielectric and semiconductor properties.

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